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Document Number: 67331
S11-0240-Rev. A, 14-Feb-11
Vishay Siliconix
Si3993CDV
New Product
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= - 250 µA
- 30 V
V
DS
Temperature Coefficient V
DS
/T
J
I
D
= - 250 µA
- 17
mV/°C
V
GS(th)
Temperature Coefficient V
GS(th)
/T
J
3.5
Gate-Source Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 250 µA
- 1.2 - 2.2 V
Gate-Source Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 30 V, V
GS
= 0 V
1
µA
V
DS
= - 30 V, V
GS
= 0 V, T
J
= 55 °C
10
On-State Drain Current
a
I
D(on)
V
DS
- 5 V, V
GS
= - 10 V
- 8 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
=- 10 V, I
D
= - 2.5 A
0.092 0.111
V
GS
= - 4.5 V, I
D
= - 1 A
0.156 0.188
Forward Transconductance
a
g
fs
V
DS
= - 15 V, I
D
= - 2.6 A
5S
Dynamic
b
Input Capacitance
C
iss
V
DS
= - 15 V, V
GS
= 0 V, f = 1 MHz
210
pFOutput Capacitance
C
oss
45
Reverse Transfer Capacitance
C
rss
33
Total Gate Charge
Q
g
V
DS
= - 15 V, V
GS
= - 10 V, I
D
= - 2.6 A
5.2 8
nC
V
DS
= - 15 V, V
GS
= - 4.5 V, I
D
= - 2.6 A
2.7 4
Gate-Source Charge
Q
gs
0.94
Gate-Drain Charge
Q
gd
1.3
Gate Resistance
R
g
f = 1 MHz 2 7 14
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 15 V, R
L
= 7.1
I
D
- 2.1 A, V
GEN
= - 4.5 V, R
g
= 1
39 59
ns
Rise Time
t
r
25 38
Turn-Off Delay Time
t
d(off)
13 20
Fall Time
t
f
918
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 15 V, R
L
= 7.1
I
D
- 2.1 A, V
GEN
= - 10 V, R
g
= 1
510
Rise Time
t
r
10 20
Turn-Off Delay Time
t
d(off)
14 21
Fall Time
t
f
714
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
I
S
T
C
= 25 °C
1.17
A
Pulse Diode Forward Current
I
SM
8
Body Diode Voltage
V
SD
I
S
= - 2.1 A, V
GS
0 V
0.85 1.2 V
Body Diode Reverse Recovery Time
t
rr
I
F
= - 2.1 A, dI/dt = 100 A/µs, T
J
= 25 °C
13 20 ns
Body Diode Reverse Recovery Charge
Q
rr
612nC
Reverse Recovery Fall Time
t
a
9
ns
Reverse Recovery Rise Time
t
b
4