ESD8501V5MUT5G

© Semiconductor Components Industries, LLC, 2014
November, 2017 Rev. 2
1 Publication Order Number:
ESD8501V5/D
ESD8501V5
ESD Protection Diode
Features
Protection for the following IEC Standards:
IEC6100042 Level 4: ±30 kV Contact Discharge
IEC6100045 (Lightning) 70 A (8/20 ms)
These Devices are PbFree, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
IEC 6100042 (ESD) Contact
Air
±30
±30
kV
Operating Junction and Storage
Temperature Range
T
J
, T
stg
65 to +150 °C
Maximum Peak Pulse Current
8/20 ms @ T
A
= 25°C
I
PP
70 A
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
Device Package Shipping
ORDERING INFORMATION
www.onsemi.com
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
ESD8501V5MUT5G UDFN2
(PbFree)
8000 / Tape &
Reel
UDFN2
CASE 517CZ
MARKING
DIAGRAM
1
Cathode
2
Anode
A M
A = Specific Device Code
M = Date Code
SCALE 4:1
ESD8501V5
www.onsemi.com
2
ELECTRICAL CHARACTERISTICS
(T
A
= 25°C unless otherwise noted)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
*See Application Note AND8308/D for detailed explanations of
datasheet parameters.
UniDirectional
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise specified)
Parameter Symbol Conditions Min Typ Max Unit
Reverse Working Voltage V
RWM
5.0 V
Breakdown Voltage (Note 1) V
BR
I
T
= 1 mA 6.0 7.0 9.0 V
Reverse Leakage Current I
R
V
RWM
= 5 V 0.1
mA
Clamping Voltage (Note 2) V
C
I
PP
= 1 A, t
p
= 8 x 20 ms
7.5 V
Clamping Voltage (Note 2) V
C
I
PP
= 35 A, t
p
= 8 x 20 ms
9.5 V
Clamping Voltage (Note 2) V
C
I
PP
= 70 A, t
p
= 8 x 20 ms
11.5 V
Junction Capacitance C
J
V
R
= 0 V, f = 1 MHz 16 pF
Dynamic Resistance R
DYN
TLP Pulse 0.04
W
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Breakdown voltage is tested from pin 1 to 2 and pin 2 to 1.
2. Nonrepetitive current pulse at T
A
= 25°C, per IEC6100045 waveform.
ESD8501V5
www.onsemi.com
3
Figure 1. Positive TLP IV Curve
Figure 2. Clamping Voltage vs. Peak Pulse
Current (t
p
= 8/20 ms)
V
pk
(V)
I
pk
(A)
9
8
7
6
5
4
3
2
1
0
0 5 10 15 20 3025
V
pk
(V)
I
pk
(A)
0807010 20 30 40 6050
14
12
10
8
6
4
2
0
Figure 3. CV Characteristics
C (pF)
V
Bias
(V)
50
40
35
30
25
20
15
10
5
0
012 34 65
45

ESD8501V5MUT5G

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TVS Diodes / ESD Suppressors 5V TVS IN UDFN2
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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