1. General description
The BGU8H1 is, also known as the LTE1001H, a Low-Noise Amplifier (LNA) for LTE
receiver applications, available in a small plastic 6-pin extremely thin leadless package.
The BGU8H1 requires one external matching inductor.
The BGU8H1 adapts itself to the changing environment resulting from co-habitation of
different radio systems in modern cellular handsets. It has been designed for low power
consumption and optimal performance. At low jamming power levels, it delivers 13 dB
gain at a noise figure of 0.9 dB. During high-power levels, it temporarily increases its bias
current to improve sensitivity.
The BGU8H1 is optimized for 2300 MHz to 2690 MHz.
2. Features and benefits
Operating frequency from 2300 MHz to 2690 MHz
Noise figure = 0.9 dB
Gain = 13 dB
High input 1 dB compression point of 1 dBm
High in band IP3
i
of 8 dBm
Supply voltage 1.5 V to 3.1 V
Self-shielding package concept
Integrated supply decoupling capacitor
Optimized performance at a supply current of 5.0 mA
Power-down mode current consumption < 1 A
Integrated temperature stabilized bias for easy design
Require only one input matching inductor
Output DC decoupled
ESD protection on all pins (HBM > 2 kV)
Integrated matching for the output
Available in a 6-pin leadless package 1.1 mm 0.7 mm 0.37 mm; 0.4 mm pitch:
SOT1232
180 GHz transit frequency - SiGe:C technology
Moisture sensitivity level 1
BGU8H1
SiGe:C low-noise amplifier MMIC for LTE
Rev. 3 — 16 January 2017 Product data sheet
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