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BC807-40WT1G
P1-P3
P4-P6
P7-P8
BC807−25W
, BC807−40W
http://onsemi.com
4
TYPICAL CHARACTERISTICS −
BC807−25W
, SBC807−25W
I
B
, BASE CURRENT (mA)
Figure 6. Saturation Region
100
10
1.0
V
R
, REVERSE VOL
T
AGE (VOLTS)
Figure 7. T
emperature Coefficients
+1.0
I
C
, COLLECTOR CURRENT
Figure 8. Capacitances
-0.1
-1.0
-1.0
-10
-100
-1000
-2.0
-1.0
0
V
CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
V
, TEMPERA
TURE COEFFICIENTS (mV/
C)
°
θ
C, CAP
ACIT
ANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01
-0.1
-10
-100
-1.0
-10
-100
T
J
= 25
°
C
I
C
= -10 mA
I
C
= -100 mA
I
C
= -300 mA
I
C
=
-500 mA
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
BC807−25W
, BC807−40W
http://onsemi.com
5
TYPICAL CHARACTERISTICS −
BC807−40W
, SBC807−40W
Figure 9. DC Current Gain vs. Collector
Current
Figure 10. Collector Emitter Saturation V
oltage
vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
0.1
0.01
0.001
0
200
400
600
800
1000
1
0.1
0.01
0.001
0.01
0.1
1
Figure 1
1. Base Emitter Saturation V
oltage vs.
Collector Current
Figure 12. Base Emitter V
oltage vs. Collector
Current
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
1
0.1
0.01
0.001
0.0001
0.2
0.3
0.5
0.6
0.7
0.8
1.0
1.1
1
0.1
0.01
0.001
0.0001
0.2
0.3
0.5
0.6
0.8
0.9
1.0
1.2
h
FE
, DC CURRENT GAIN
V
CE(sat)
, COLLECTOR−EMITTER
SA
TURA
TION VOL
T
AGE (V)
V
BE(sat)
, BASE−EMITTER
SA
TURA
TION VOL
T
AGE (V)
V
BE(on)
, BASE−EMITTER VOL
T
AGE (V)
1
V
CE
= 1 V
150
°
C
−55
°
C
25
°
C
I
C
/I
B
= 10
150
°
C
−55
°
C
25
°
C
0.4
0.9
I
C
/I
B
= 10
150
°
C
−55
°
C
25
°
C
0.4
0.7
1.1
V
CE
= 5 V
150
°
C
−55
°
C
25
°
C
Figure 13. Current Gain Bandwidth Product
vs. Collector Current
I
C
, COLLECTOR CURRENT (A)
1000
10
1
0.1
10
100
f
T
, CURRENT−GAIN−BANDWIDTH
PRODUCT (MHz)
V
CE
= 1 V
T
A
= 25
°
C
1000
100
100
300
500
700
900
BC807−25W
, BC807−40W
http://onsemi.com
6
TYPICAL CHARACTERISTICS −
BC807−40W
, SBC807−40W
I
B
, BASE CURRENT (mA)
Figure 14. Saturation Region
100
10
1.0
V
R
, REVERSE VOL
T
AGE (VOLTS)
Figure 15. T
emperature Coefficients
+1.0
I
C
, COLLECTOR CURRENT
Figure 16. Capacitances
-0.1
-1.0
-1.0
-10
-100
-1000
-2.0
-1.0
0
V
CE
, COLLECTOR-EMITTER VOL
T
AGE (VOL
TS)
V
, TEMPERA
TURE COEFFICIENTS (mV/
C)
°
θ
C, CAP
ACIT
ANCE (pF)
-1.0
-0.8
-0.6
-0.4
-0.2
0
-0.01
-0.1
-10
-100
-1.0
-10
-100
T
J
= 25
°
C
I
C
= -10 mA
I
C
= -100 mA
I
C
= -300 mA
I
C
=
-500 mA
q
VC
for V
CE(sat)
q
VB
for V
BE
C
ob
C
ib
P1-P3
P4-P6
P7-P8
BC807-40WT1G
Mfr. #:
Buy BC807-40WT1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT SS SC70 GP XSTR PNP 45V
Lifecycle:
New from this manufacturer.
Delivery:
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Products related to this Datasheet
BC807-25WT1G
BC807-40WT1G
SBC807-25WT1G
SBC807-40WT1G