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TB0900M-13

P1-P3P4-P4
DS30361 Rev. 4 - 2 1 of 4 TB0640M - TB3500M
www.diodes.com
Features
· 50A Peak Pulse Current @ 10/1000ms
· 250A Peak Pulse Current @ 8/20ms
· 58 - 320V Stand-Off Voltages
· Oxide-Glass Passivated Junction
· Bi-Directional Protection In a Single Device
· High Off-State impedance and Low On-State
Voltage
· Helps Equipment Meet GR-1089-CORE, IEC
61000-4-5, FCC Part 68, ITU-T K.20/K.21, and
UL497B
· UL Listed Under Recognized Component Index,
File Number 156346
Mechanical Data
· Case: SMB, Molded Plastic
· Plastic Material: UL Flammability
Classification Rating 94V-0
· Moisture sensitivity: Level 1 per J-STD-020A
· Terminals: Solder Plated Terminal -
Solderable per MIL-STD-202, Method 208
· Polarity: None; Bi-Directional Devices Have No
Polarity Indicator
· Weight: 0.093 grams (approx.)
· Marking: Date Code and Marking Code (See Page 4)
· Ordering Information: See Page 4
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
B
A
C
D
F
H
E
G
Characteristic Symbol Value Unit
Non-Repetitive Peak Impulse Current @10/1000us
I
pp
50 A
Non-Repetitive Peak On-State Current @8.3ms (one-half cycle)
I
TSM
30 A
Junction Temperature Range
T
j
-40 to +150 °C
Storage Temperature Range
T
STG
-55 to +150 °C
Thermal Resistance, Junction to Lead
R
qJL
20 °C/W
Thermal Resistance, Junction to Ambient
R
qJA
100 °C/W
Typical Positive Temperature Coefficient for Breakdown Voltage
DVBR/DT
j
0.1 %/°C
SMB
Dim Min Max
A
4.06 4.57
B
3.30 3.94
C
1.96 2.21
D
0.15 0.31
E
5.21 5.59
F
0.05 0.20
G
2.01 2.50
H
0.76 1.52
All Dimensions in mm
Maximum Ratings
@ T
A
= 25°C unless otherwise specified
Maximum Rated Surge Waveform
Waveform Standard Ipp (A)
2/10 us GR-1089-CORE 300
8/20 us IEC 61000-4-5 250
10/160 us FCC Part 68 150
10/700 us ITU-T, K.20/K.21 100
10/560 us FCC Part 68 75
10/1000 us GR-1089-CORE 50
0
TIME
100
50
0
I , PEAK PULSE CURRENT (%)
PP
Peak Value (I )
pp
Half Value
t = rise time to peak value
r
t = decay time to half value
p
t
r
t
p
TCUDORPWEN
TB0640M - TB3500M
50A BI-DIRECTIONAL SURFACE MOUNT THYRISTOR
SURGE PROTECTIVE DEVICE
DS30361 Rev. 4 - 2 2 of 4 TB0640M - TB3500M
www.diodes.com
Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
Part Number
Rated
Repetitive
Off-State
Voltage
Off-State
Leakage
Current @
V
DRM
Breakover
Voltage
On-State
Voltage
@ I
T
= 1A
Breakover
Current
I
BO
Holding Current
I
H
Off-State
Capacitance
Marking Code
V
DRM
(V) I
DRM
(uA) V
BO
(V) V
T
(V)
Min
(mA)
Max
(mA)
Min
(mA)
Max (mA)
C
O
(pF)
TB0640M
58 5 77 3.5 50 800 150 800 140 T064M
TB0720M
65 5 88 3.5 50 800 150 800 140 T072M
TB0900M
75 5 98 3.5 50 800 150 800 140 T090M
TB1100M
90 5 130 3.5 50 800 150 800 90 T110M
TB1300M
120 5 160 3.5 50 800 150 800 90 T130M
TB1500M
140 5 180 3.5 50 800 150 800 90 T150M
TB1800M
160 5 220 3.5 50 800 150 800 90 T180M
TB2300M
190 5 265 3.5 50 800 150 800 60 T230M
TB2600M
220 5 300 3.5 50 800 150 800 60 T260M
TB3100M
275 5 350 3.5 50 800 150 800 60 T310M
TB3500M
320 5 400 3.5 50 800 150 800 60 T350M
Symbol Parameter
V
DRM
Stand-off Voltage
I
DRM
Leakage current at stand-off voltage
V
BR
Breakdown voltage
I
BR
Breakdown current
V
BO
Breakover voltage
I
BO
Breakover current
I
H
Holding current NOTE: 1
V
T
On state voltage
I
PP
Peak pulse current
C
O
Off-state capacitance NOTE: 2
Notes: 1. I
H
> (V
L
/R
L
) If this criterion is not obeyed, the TSPD triggers but does not return correctly to high-resistance state. The surge
recovery time does not exceed 30ms.
2. Off-state capacitance measured at f = 1.0MHz, 1.0V
RMS
signal, V
R
= 2V
DC
bias.
I
BO
V
BR
V
DRM
V
T
V
BO
I
H
I
V
I
BR
I
DRM
I
PP
TCUDORPWEN
DS30361 Rev. 4 - 2 3 of 4 TB0640M - TB3500M
www.diodes.com
0.9
T , JUNCTION TEMPERATURE (°C)
J
Fig. 2 Relative Variation of Breakdown Voltage
vs. Junction Tem
p
erature
V= (T)
BR J
V= (T= 25°C)
BR J
0.95
1
1.05
1.1
1.15
1
.
2
-50
-25 0 25
50
75 100
125
150 175
NORMALIZED BREAKDOWN VOLTAGE
1
10
100
1
1.5 3
2.52
4
3.5
5
4.5
I , ON-STATE CURRENT (A)
T
V , ON-STATE VOLTAGE (V)
T
Fi
g
. 4 On-State Current vs. On-State Volta
g
e
T = 25°C
j
I , OFF-STATE CURRENT (uA)
(DRM)
T , JUNCTION TEMPERATURE (°C)
J
Fi
g
. 1 Off-State Current vs. Junction Temperature
0.001
0.01
1
0.1
10
100
-25
0
25 50 75 100 125 150
V = 50V
DRM
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1
.4
1.3
1.2
-50 -25
0
25 50 100
75
125
NORMALIZED HOLDING CURRENT
T , JUNCTION TEMPERATURE (°C)
J
Fig. 5 Relative Variation of Holding Current vs.
Junction Tem
p
erature
I=(T)
HJ
I = (T = 25°C)
HJ
0.1
1
1
10 100
NORMALIZED CAPACITANCE
V , REVERSE VOLTAGE (V)
R
Fig. 6 Relative Variation of Junction Capacitance
vs. Reverse Volta
g
eBias
C = (V )
OR
C = (V = 1V)
OR
T = 25°C
j
f=1Mhz
V
RMS
=1V
TCUDORPWEN
1
1.05
0.95
-50
NORMALIZED BREAKDOWN VOLTAGE
1
.
1
-25
0
75
50
25
125
100
175
150
V=(T)
BO J
V=(T=25°C)
BO J
T , JUNCTION TEMPERATURE (ºC)
J
Fig. 3 Relative Variation of Breakover Voltage
vs. Junction Tem
p
erature
P1-P3P4-P4

TB0900M-13

Mfr. #:
Buy TB0900M-13
Manufacturer:
Diodes Incorporated
Description:
Thyristor Surge Protection Devices (TSPD) 50A 75V
Lifecycle:
New from this manufacturer.
Delivery:
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