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NCV86602BDT33RKG

P1-P3P4-P6P7-P9P10-P12P13-P14
© Semiconductor Components Industries, LLC, 2011
August, 2011 − Rev. 4
1 Publication Order Number:
NCV8660B/D
NCV8660B
Very Low I
q
LD0 150 mA
Regulator with RESET and
Delay Time Select
The NCV8660B is a precision very low Iq low dropout voltage
regulator. Quiescent currents as low as 28 mA typical make it ideal for
automotive applications requiring low quiescent current with or
without a load. Integrated control features such as Reset and Delay
Time Select make it ideal for powering microprocessors.
It is available with a fixed output voltage of 5.0 V and 3.3 V and
regulates within ±2.0%.
Features
• Fixed Output Voltage of 5 V and 3.3 V
• ±2.0% Output Voltage up to V
BAT
= 40 V
• Output Current up to 150 mA
• Microprocessor Compatible Control Functions:
♦ Delay Time Select
♦ RESET Output
• NCV Prefix for Automotive
♦ Site and Change Control
♦ AEC−Q100 Qualified
• Low Dropout Voltage
• Low Quiescent Current of 28 mA Typical
• Stable Under No Load Conditions
• Protection Features:
♦ Thermal Shutdown
♦ Short Circuit
• These are Pb−Free Devices
Applications
• Automotive:
♦ Body Control Module
♦ Instrument and Clusters
♦ Occupant Protection and Comfort
♦ Powertrain
• Battery Powered Consumer Electronics
Figure 1. Application Diagram
DT
OUT
RO
IN
DT
OUT
RO
GND
NCV8660B
C
OUT
2.2 mF
C
IN
0.1 mF
V
BAT
13.2 V
http://onsemi.com
http://onsemi.com
DPAK 5−PIN
DT SUFFIX
CASE 175AA
ORDERING INFORMATION
1
5
MARKING
DIAGRAMS
1
x = 5 for 5 V Output, 3 for 3.3 V Output
y = 1 for 8 ms, 128 ms Reset Delay,
= 2 for 8 ms, 32 ms Reset Delay
= 3 for 16 ms, 64 ms Reset Delay
= 4 for 32 ms, 128 ms Reset Delay
A = Assembly Location
L = Wafer Lot
Y = Year
WW = Work Week
G or G = Pb−Free Package
660yBxG
ALYWW
See detailed ordering and shipping information in the
dimensions section on page 12 of this data sheet.
1
8
660yBx
ALYWW
G
1
8
SOIC−8 FUSED
CASE 751
NCV8660B
http://onsemi.com
2
PIN DESCRIPTIONS
Pin
Symbol Function
DPAK
SOIC−8
FUSED
1 1 IN
Input Supply Voltage. 0.1 mF bypass capacitor to GND at the IC.
2 2 R
O
Reset Output. CMOS compatible output. Goes low when V
OUT
drops by more than 7%
from nominal.
3, Tab 5−8 GND Ground
4 3 DT Reset Delay Time Select. Short to GND or connect to OUT to select time.
5 4 OUT
Regulated Voltage Output. 2.2 mF to ground for typical applications.
Figure 2. Block Diagram
+
−
IN
DT
RO
OUT
Vref1
+
−
Vref2
GND
Current Limit
and Thermal
Shutdown
Timing
Circuit
NCV8660B
http://onsemi.com
3
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Min Max Unit
Input Voltage (IN) V
IN
−0.3 40 V
Input Current I
IN
−1.0 − mA
Output Voltage (OUT)
DC
Transient, t < 10 s (Note 1)
V
OUT
−0.3
−0.3
5.5
16
V
Output Current (OUT) I
OUT
−1.0 Current
Limited
mA
Storage Temperature Range T
STG
−55 150 °C
DT (Reset Delay Time Select) Voltage (Note 2) V
DT
−0.3 16 V
DT (Reset Delay Time Select) Current (Note 2) I
DT
−1.0 1.0 mA
RO (Reset Output) Voltage
DC
Transient, t < 10 s
V
RO
−0.3
−0.3
5.5
16
V
RO (Reset Output) Current I
RO
−1.0 1.0 mA
ESD CAPABILITY
ESD Capability, Human Body Model (Note 3)
ESD
HB
−2.0 2.0 kV
ESD Capability, Machine Model (Note 3) ESD
MM
−200 200 V
ESD Capability, Charged Device Model (Note 3) ESD
CDM
−1.0 1.0 kV
THERMAL RESISTANCE
Junction−to−Case (Note 4) DPAK 5
R
q
JC
15
°C/W
Junction−to−Ambient (Note 4) DPAK 5
R
q
JA
66 °C/W
Junction−to−Tab (Note 4) DPAK 5
R
q
JT
4.0 °C/W
Junction−to−Ambient (Note 4) SOIC−8 FUSED
R
q
JA
104 °C/W
Junction−to−Lead (pin 6) (Note 4) SOIC−8 FUSED
R
q
JT
33 °C/W
LEAD SOLDERING TEMPERATURE AND MSL
Moisture Sensitivity Level DPAK 5
SOIC−8 FUSED
MSL 1
3
−
Lead Temperature Soldering: SMD style only, Reflow (Note 5)
Pb−Free Part 60 − 150 sec above 217°C, 40 sec max at peak
SLD − 265 peak °C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. The output voltage must not exceed the input voltage.
2. External resistor required to minimize current to less than 1 mA when the control voltage is above 16 V.
3. This device series incorporates ESD protection and is tested by the following methods:
ESD HBM tested per AEC−Q100−002 (EIA/JESD22−A114)
ESD MM tested per AEC−Q100−003 (EIA/JESD22−A115)
ESD CDM tested per EIA/JESD22/C101, Field Induced Charge Model
4. Values represented typical steady−state thermal performance on 1 oz. copper FR4 PCB with 1 in
2
copper area.
5. Per IPC / JEDEC J−STD−020C.
OPERATING RANGE
Pin Symbol, Parameter Symbol Min Max Unit
V
IN
, Input Voltage Operating Range V
IN
4.5 40 V
Junction Temperature Range T
J
−40 150 °C
P1-P3P4-P6P7-P9P10-P12P13-P14

NCV86602BDT33RKG

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Manufacturer:
ON Semiconductor
Description:
LDO Voltage Regulators VERY LOW IQ LDO W RESET
Lifecycle:
New from this manufacturer.
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