1SMB20AT3

Semiconductor Components Industries, LLC, 2012
February, 2012 Rev. 13
1 Publication Order Number:
1SMB5.0AT3/D
1SMB5.0AT3G Series,
SZ1SMB5.0AT3G Series
600 Watt Peak Power Zener
Transient Voltage
Suppressors
Unidirectional
The SMB series is designed to protect voltage sensitive
components from high voltage, high energy transients. They have
excellent clamping capability, high surge capability, low zener
impedance and fast response time. The SMB series is supplied in
ON Semiconductors exclusive, cost-effective, highly reliable
SURMETIC
package and is ideally suited for use in
communication systems, automotive, numerical controls, process
controls, medical equipment, business machines, power supplies and
many other industrial/consumer applications.
Features
Working Peak Reverse Voltage Range 5.0 V to 170 V
Standard Zener Breakdown Voltage Range 6.7 V to 199 V
Peak Power 600 W @ 1.0 ms
ESD Rating of Class 3 (> 16 kV) per Human Body Model
Maximum Clamp Voltage @ Peak Pulse Current
Low Leakage < 5.0 mA Above 10 V
UL 497B for Isolated Loop Circuit Protection
Response Time is Typically < 1.0 ns
SZ Prefix for Automotive and Other Applications Requiring Unique
Site and Control Change Requirements; AECQ101 Qualified and
PPAP Capable
PbFree Packages are Available*
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic
FINISH: All external surfaces are corrosion resistant and leads are
readily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
260C for 10 Seconds
LEADS: Modified LBend providing more contact area to bond pads
POLARITY: Cathode indicated by polarity band
MOUNTING POSITION: Any
*For additional information on our PbFree strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
PLASTIC SURFACE MOUNT
ZENER OVERVOLTAGE
TRANSIENT SUPPRESSORS
5.0 V 170 V,
600 W PEAK POWER
Device Package Shipping
ORDERING INFORMATION
SMB
CASE 403A
PLASTIC
Cathode Anode
http://onsemi.com
1SMBxxxAT3G SMB
(PbFree)
2,500 /
Tape & Reel
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
See specific marking information in the device marking
column of the Electrical Characteristics table on page 3 of
this data sheet.
DEVICE MARKING INFORMATION
A = Assembly Location
Y = Year
WW = Work Week
xx = Device Code (Refer to page 3)
G = PbFree Package
MARKING DIAGRAM
AYWW
xx G
G
(Note: Microdot may be in either location)
SZ1SMBxxxAT3G SMB
(PbFree)
2,500 /
Tape & Reel
UniDirectional TVS
I
PP
I
F
V
I
I
R
I
T
V
RWM
V
C
V
BR
V
F
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
http://onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Power Dissipation (Note 1) @ T
L
= 25C, Pulse Width = 1 ms P
PK
600 W
DC Power Dissipation @ T
L
= 75C Measured Zero Lead Length (Note 2)
Derate Above 75C
Thermal Resistance from JunctiontoLead
P
D
R
q
JL
3.0
40
25
W
mW/C
C/W
DC Power Dissipation (Note 3) @ T
A
= 25C
Derate Above 25C
Thermal Resistance from JunctiontoAmbient
P
D
R
q
JA
0.55
4.4
226
W
mW/C
C/W
Forward Surge Current (Note 4) @ T
A
= 25C I
FSM
100 A
Operating and Storage Temperature Range T
J
, T
stg
65 to +150 C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
1. 10 X 1000 ms, nonrepetitive.
2. 1 in square copper pad, FR4 board.
3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403A case outline dimensions spec.
4. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.
ELECTRICAL CHARACTERISTICS (T
A
= 25C unless
otherwise noted, V
F
= 3.5 V Max. @ I
F
(Note 5) = 30 A)
Symbol
Parameter
I
PP
Maximum Reverse Peak Pulse Current
V
C
Clamping Voltage @ I
PP
V
RWM
Working Peak Reverse Voltage
I
R
Maximum Reverse Leakage Current @ V
RWM
V
BR
Breakdown Voltage @ I
T
I
T
Test Current
I
F
Forward Current
V
F
Forward Voltage @ I
F
5. 1/2 sine wave (or equivalent square wave), PW = 8.3 ms,
nonrepetitive duty cycle.
1SMB5.0AT3G Series, SZ1SMB5.0AT3G Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS
Device*
Device
Marking
V
RWM
(Note 6)
I
R
@ V
RWM
Breakdown Voltage V
C
@ I
PP
(Note 8)
C
typ
(Note 9)
V
BR
(Note 7) Volts @ I
T
V
C
I
PP
V
mA
Min Nom Max mA
V A pF
1SMB5.0AT3G
1SMB6.0AT3G
1SMB6.5AT3G
1SMB7.0AT3G
KE
KG
KK
KM
5.0
6.0
6.5
7.0
800
800
500
500
6.40
6.67
7.22
7.78
6.7
7.02
7.6
8.19
7.0
7.37
7.98
8.6
10
10
10
10
9.2
10.3
11.2
12.0
65.2
58.3
53.6
50.0
2700
2300
2140
2005
1SMB7.5AT3G
1SMB8.0AT3G
1SMB8.5AT3G
1SMB9.0AT3G
KP
KR
KT
KV
7.5
8.0
8.5
9.0
100
50
10
5.0
8.33
8.89
9.44
10.0
8.77
9.36
9.92
10.55
9.21
9.83
10.4
11.1
1.0
1.0
1.0
1.0
12.9
13.6
14.4
15.4
46.5
44.1
41.7
39.0
1890
1780
1690
1605
1SMB10AT3G
1SMB11AT3G
1SMB12AT3G
1SMB13AT3G
KX
KZ
LE
LG
10
11
12
13
5.0
5.0
5.0
5.0
11.1
12.2
13.3
14.4
11.7
12.85
14
15.15
12.3
13.5
14.7
15.9
1.0
1.0
1.0
1.0
17.0
18.2
19.9
21.5
35.3
33.0
30.2
27.9
1460
1345
1245
1160
1SMB14AT3G
1SMB15AT3G
1SMB16AT3G
1SMB17AT3G
LK
LM
LP
LR
14
15
16
17
5.0
5.0
5.0
5.0
15.6
16.7
17.8
18.9
16.4
17.6
18.75
19.9
17.2
18.5
19.7
20.9
1.0
1.0
1.0
1.0
23.2
24.4
26.0
27.6
25.8
24.0
23.1
21.7
1085
1020
965
915
1SMB18AT3G
1SMB20AT3G
1SMB22AT3G
1SMB24AT3G
LT
LV
LX
LZ
18
20
22
24
5.0
5.0
5.0
5.0
20.0
22.2
24.4
26.7
21.05
23.35
25.65
28.1
22.1
24.5
26.9
29.5
1.0
1.0
1.0
1.0
29.2
32.4
35.5
38.9
20.5
18.5
16.9
15.4
870
790
730
675
1SMB26AT3G
1SMB28AT3G
1SMB30AT3G
1SMB33AT3G
ME
MG
MK
MM
26
28
30
33
5.0
5.0
5.0
5.0
28.9
31.1
33.3
36.7
30.4
32.75
35.05
38.65
31.9
34.4
36.8
40.6
1.0
1.0
1.0
1.0
42.1
45.4
48.4
53.3
14.2
13.2
12.4
11.3
630
590
555
510
1SMB36AT3G
1SMB40AT3G
1SMB43AT3G
1SMB45AT3G
MP
MR
MT
MV
36
40
43
45
5.0
5.0
5.0
5.0
40.0
44.4
47.8
50.0
42.1
46.75
50.3
52.65
44.2
49.1
52.8
55.3
1.0
1.0
1.0
1.0
58.1
64.5
69.4
72.7
10.3
9.3
8.6
8.3
470
430
400
385
1SMB48AT3G
1SMB51AT3G
1SMB54AT3G
1SMB58AT3G
MX
MZ
NE
NG
48
51
54
58
5.0
5.0
5.0
5.0
53.3
56.7
60.0
64.4
56.1
59.7
63.15
67.8
58.9
62.7
66.3
71.2
1.0
1.0
1.0
1.0
77.4
82.4
87.1
93.6
7.7
7.3
6.9
6.4
365
345
330
310
1SMB60AT3G
1SMB64AT3G
1SMB70AT3G
1SMB75AT3G
NK
NM
NP
NR
60
64
70
75
5.0
5.0
5.0
5.0
66.7
71.1
77.8
83.3
70.2
74.85
81.9
87.7
73.7
78.6
86
92.1
1.0
1.0
1.0
1.0
96.8
103
113
121
6.2
5.8
5.3
4.9
300
280
260
245
1SMB85AT3G
1SMB90AT3G
1SMB100AT3G
NV
NX
NZ
85
90
100
55.0
5.0
5.0
94.4
100
111
99.2
105.5
117
104
111
123
1.0
1.0
1.0
137
146
162
4.4
4.1
3.7
220
210
190
1SMB110AT3G
1SMB120AT3G
1SMB130AT3G
1SMB150AT3G
PE
PG
PK
PM
110
120
130
150
5.0
5.0
5.0
5.0
122
133
144
167
128.5
140
151.5
176
135
147
159
185
1.0
1.0
1.0
1.0
177
193
209
243
3.4
3.1
2.9
2.5
175
160
150
135
1SMB160AT3G
1SMB170AT3G
PP
PR
160
170
5.0
5.0
178
189
187.5
199
197
209
1.0
1.0
259
275
2.3
2.2
125
120
6. A transient suppressor is normally selected according to the working peak reverse voltage (V
RWM
), which should be equal to or greater than
the DC or continuous peak operating voltage level.
7. V
BR
measured at pulse test current I
T
at an ambient temperature of 25C.
8. Surge current waveform per Figure 2 and derate per Figure 4 of the General Data 600 W at the beginning of this group.
9. Bias Voltage = 0 V, F = 1 MHz, T
J
= 25C
Please see 1SMB10CAT3 to 1SMB78CAT3 for Bidirectional devices.
* Include SZ-prefix devices where applicable.

1SMB20AT3

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
ESD Suppressors / TVS Diodes 20V 600W
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union