V
RRM
= 50 V - 1000 V
I
F
=10 A
Features
• Types up to 1000 V V
RRM
BR-10 Package
• Low forward voltage drop
• Low leakage current
Mechanical Data
Case: Molded plastic body
Polarity: Marked on body
Mounting position: Any
Mounting: Hole for number 6 screw
Parameter Symbol BR1005 BR101 Unit
Re
etitive
eak reverse volta
e
V
RRM
50 100 V
BR1005 thru BR104
BR104
200
BR102
Maximum ratings, at T
j
= 25 °C, unless otherwise specified
Silicon Bridge
Rectifier
Conditions
400
RMS reverse voltage
V
RMS
35 70 V
DC blocking voltage
V
DC
50 100 V
Continuous forward current
I
F
10 10 A
Operating temperature
T
j
-65 to 150 -65 to 150 °C
Storage temperature
T
stg
-65 to 150 -65 to 150 °C
Parameter Symbol BR1005 BR101 Unit
Diode forward voltage 1.1 1.1
10 10
1000 1000
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
9.40 9.40 °C/W
1000
A150
Reverse current
I
R
V
F
150
μA
V
R
= 50 V, T
j
= 25 °C
I
F
= 5 A, T
j
= 25 °C
T
C
≤ 50 °C
Conditions
140
150 150
-65 to 150
10 10
-65 to 150
BR104
10 10
BR102
9.40
V
R
= 50 V, T
j
= 100 °C
9.40
1.1 1.1
1000
V
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
-65 to 150 -65 to 150
T
C
= 25 °C, t
p
= 8.3 ms
280
400200
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
www.genesicsemi.com
1
