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UH1DHE3/5AT

P1-P3P4-P5
UH1B, UH1C, UH1D
www.vishay.com
Vishay General Semiconductor
Revision: 17-Dec-12
1
Document Number: 89111
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Ultrafast Rectifier
FEATURES
• Low profile package
• Ideal for automated placement
• Oxide planar chip junction
• Ultrafast recovery times for high frequency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in secondary rectification and freewheeling for
ultrafast switching speeds AC/AC and DC/DC converters in
high temperature conditions for both consumer and
automotive applications.
MECHANICAL DATA
Case: DO-214AC (SMA)
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Base P/NHE3 - RoHS-compliant, AEC-Q101 qualified
Base P/NHE3_X - RoHS-compliant and AEC-Q101 qualified
(“_X” denotes revision code e.g. A, B, .....)
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix
meets JESD 201 class 2 whisker test
Polarity: Color band denotes cathode end
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
100 V, 150 V, 200 V
I
FSM
30 A
t
rr
25 ns
V
F
at I
F
= 1.0 A 0.76 V
T
J
max. 175 °C
DO-214AC (SMA)
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH1B UH1C UH1D UNIT
Device marking code HB HC HD
Maximum repetitive peak reverse voltage V
RRM
100 150 200 V
Maximum average forward rectified current (fig. 1) I
F(AV)
1.0 A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
I
FSM
30 A
Operating junction and storage temperature range T
J
, T
STG
- 55 to + 175 °C
UH1B, UH1C, UH1D
www.vishay.com
Vishay General Semiconductor
Revision: 17-Dec-12
2
Document Number: 89111
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
Free air, mounted on recommended copper pad area. Thermal resistance R
JA
- junction to ambient, R
JM
- junction to mount
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage
I
F
= 0.6 A
T
A
= 25 °C
V
F
(1)
0.90 -
V
I
F
= 1.0 A 0.96 1.05
I
F
= 0.6 A
T
A
= 125 °C
0.70 -
I
F
= 1.0 A 0.76 0.90
Reverse current Rated V
R
T
A
= 25 °C
I
R
(2)
-1.0
μA
T
A
= 125 °C 7.5 25
Maximum reverse recovery time
I
F
= 0.5 A, I
R
= 1.0 A,
I
rr
= 0.25 A
T
A
= 25 °C t
rr
13 25
ns
Typical reverse recovery time
I
F
= 1.0 A, dI/dt = 50 A/μs,
V
R
= 30 V, I
rr
= 0.1 I
RM
21 30
Typical softness factor (t
b
/t
a
)
I
F
= 1.0 A, dI/dt = 200 A/μs,
V
R
= 200 V
T
A
= 125 °C
S0.8 - -
Typical reverse recovery current I
RM
2.7 4.0 A
Typical stored charge Q
rr
35 - nC
Typical junction capacitance 4.0 V, 1 MHz C
J
17 - pF
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UH1B UH1C UH1D UNIT
Typical thermal resistance
R
JA
(1)
120
°C/W
R
JM
(1)
20
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
UH1D-E3/61T 0.064 61T 1800 7" diameter plastic tape and reel
UH1D-E3/5AT 0.064 5AT 7500 13" diameter plastic tape and reel
UH1DHE3/61T
(1)
0.064 61T 1800 7" diameter plastic tape and reel
UH1DHE3/5AT
(1)
0.064 5AT 7500 13" diameter plastic tape and reel
UH1DHE3_A/H
(1)
0.064 H 1800 7" diameter plastic tape and reel
UH1DHE3_A/I
(1)
0.064 I 7500 13" diameter plastic tape and reel
UH1B, UH1C, UH1D
www.vishay.com
Vishay General Semiconductor
Revision: 17-Dec-12
3
Document Number: 89111
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES
(T
A
= 25 °C unless otherwise noted)
Fig. 1 - Maximum Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Fig. 3 - Typical Instantaneous Forward Characteristics
Fig. 4 - Typical Reverse Characteristics
Fig. 5 - Typical Junction Capacitance
Fig. 6 - Typical Transient Thermal Impedance
0
1.2
95 105 115 125 135 145 155 165
Average Forward Rectified Current (A)
Lead Temperature (°C)
0.8
1.0
0.2
0.4
0.6
175
T
L
Measured
at the Cathode Band Terminal
1.0
0.4
0.3
0.2
0.1
0
0 0.2 0.4 0.6 0.
8 1.0 1.2
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
0.9
0.8
0.7
0.6
0.5
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0.2 0.4 0.6 0.8 1.0
0.01
0.1
1
10
100
1.2 1.8
T
A
= 150 °C
T
A
= 125 °C
T
A
= 175 °C
T
A
= 25 °C
1.61.4
T
A
= 100 °C
T
A
= 25 °C
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
Percent of Rated Peak Reverse Voltage (%)
1000
100
1
0.1
0.01
10
10 40 60 80 100
Instantaneous Reverse Current (µA)
T
A
= 175 °C
20 50 70 9030
Reverse Voltage (V)
Junction Capacitance (pF)
0.1 101 100
10
100
1
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mV
p-p
0.1 101 100
1
10
1000
0.01
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
100
Junction to Ambient
P1-P3P4-P5

UH1DHE3/5AT

Mfr. #:
Buy UH1DHE3/5AT
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 1.0A 200 Volt 25ns 30 Amp IFSM
Lifecycle:
New from this manufacturer.
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