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FFSH20120ADN-F085

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2018
April, 2018 − Rev. 1
1 Publication Order Number:
FFSH20120ADN−F085/D
FFSH20120ADN-F085
Silicon Carbide Schottky
Diode
1200 V, 20 A
Description
Silicon Carbide (SiC) Schottky Diodes use a completely new
technology that provides superior switching performance and higher
reliability compared to Silicon. No reverse recovery current,
temperature independent switching characteristics, and excellent
thermal performance sets Silicon Carbide as the next generation of
power semiconductor. System benefits include highest efficiency,
faster operating frequency, increased power density, reduced EMI, and
reduced system size and cost.
Features
• Max Junction Temperature 175°C
• Avalanche Rated 100 mJ
• High Surge Current Capacity
• Positive Temperature Coefficient
• Ease of Paralleling
• No Reverse Recovery/No Forward Recovery
• AEC−Q101 Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Automotive HEV−EV Onboard Chargers
• Automotive HEV−EV DC−DC Converters
www.onsemi.com
TO−247−3LD
CASE 340CH
See detailed ordering and shipping information on page 2 of
this data sheet.
ORDERING INFORMATION
Schottky Diode
MARKING DIAGRAM
1
2
2. Cathode/
Case
3. Anode1. Anode
3
$Y = ON Semiconductor Logo
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
FFSH20120ADN = Specific Device Code
$Y&Z&3&K
FFSH
20120ADN
FFSH20120ADN−F085
www.onsemi.com
2
ABSOLUTE MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
RRM
Peak Repetitive Reverse Voltage 1200 V
E
AS
Single Pulse Avalanche Energy (Note 1) 100 mJ
I
F
Continuous Rectified Forward Current @ T
C
< 148°C 10* / 20**
A
Continuous Rectified Forward Current @ T
C
< 135°C 15* / 30**
I
F,
Max
Non-Repetitive Peak Forward Surge Current
T
C
= 25°C, 10 ms
630 A
T
C
= 150°C, 10 ms
560 A
I
F,SM
Non-Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 96 A
I
F,RM
Repetitive Forward Surge Current Half-Sine Pulse, t
p
= 8.3 ms 46 A
Ptot Power Dissipation
T
C
= 25°C 150 W
T
C
= 150°C 25 W
T
J
, T
STG
Operating and Storage Temperature Range −55 to +175 °C
TO247 Mounting Torque, M3 Screw 60 Ncm
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. E
AS
of 100 mJ is based on starting T
J
= 25°C, L = 0.5 mH, I
AS
= 20 A, V = 50 V.
*Per leg, ** Per Device
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case, Max 1.0* / 0.44** °C/W
*Per leg, ** Per Device
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Symbol
Parameter Test Condition Min Typ Max Unit
V
F
Forward Voltage
I
F
= 10 A, T
C
= 25°C − 1.45 1.75
V
I
F
= 10 A, T
C
= 125°C − 1.7 2.0
I
F
= 10 A, T
C
= 175°C − 2.0 2.4
I
R
Reverse Current
V
R
= 1200 V, T
C
= 25°C − − 200 mA
V
R
= 1200 V, T
C
= 125°C − − 300
V
R
= 1200 V, T
C
= 175°C − − 400
Q
C
Total Capacitive Charge V = 800 V − 62 − nC
C Total Capacitance
V
R
= 1 V, f = 100 kHz − 612 −
pF
V
R
= 400 V, f = 100 kHz − 58 −
V
R
= 800 V, f = 100 kHz − 47 −
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
ORDERING INFORMATION
Part Number Top Marking Package Shipping
FFSH20120ADN−F085 FFSH20120ADN TO−247−3LD
(Pb-Free / Halogen Free)
30 Units / Tube
FFSH20120ADN−F085
www.onsemi.com
3
TYPICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted; per leg)
Figure 1. Forward Characteristics Figure 2. Reverse Characteristics
Figure 3. Reverse Characteristics Figure 4. Current Derating
Figure 5. Power Derating Figure 6. Capacitive Charge vs. Reverse
Voltage
1000
0.0
0.2
0.4
0.6
0.8
1.0
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= −55
o
C
I
R
, REVERSE CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
1100 1200 1300 1400 1500
01234
0
5
10
15
20
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= 75
o
C
T
J
= 25
o
C
T
J
= −55
o
C
I
F
, FORWARD CURRENT (A)
V
F
, FORWARD VOLTAGE (V)
200 400 600 800 1000 1200
10
−3
10
−2
10
−1
1
10
I
R
, REVERSE CURRENT (mA)
V
R
, REVERSE VOLTAGE (V)
T
J
= 175
o
C
T
J
= 125
o
C
T
J
= −55
o
C
T
J
= 25
o
C
T
J
= 75
o
C
25 50 75 100 125 150 175
0
40
80
120
160
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.7
D = 1
I
F
, PEAK FORWARD CURRENT (A)
T
C
, CASE TEMPERATURE (
o
C)
25 50 75 100 125 150 175
0
50
100
150
P
TOT
, POWER DISSIPATION (W)
T
C
, CASE TEMPERATURE (
o
C)
0 200 400 600 800 1000
0
20
40
60
80
Q
C
, CAPACITIVE CHARGE (nC)
V
R
, REVERSE VOLTAGE (V)
P1-P3P4-P6P7-P8

FFSH20120ADN-F085

Mfr. #:
Buy FFSH20120ADN-F085
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 1200V 20A AUTO SIC SBD
Lifecycle:
New from this manufacturer.
Delivery:
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