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MC74HC05ADR2G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
May, 2013 − Rev. 1
1 Publication Order Number:
MC74HC05A/D
MC74HC05A
Hex Inverter with Open
Drain Outputs
The MC74HC05A contains six inverters with open drain outputs.
The MC74HC05A is identical to the MC74HC04A, except for the
open drain outputs. The outputs can be connected to other open drain
outputs to implement active LOW wired−OR or active High
wired−AND logic functions. The open drain outputs require pull−up
resistors to perform correctly.
Features
• Output Drive Capability: 10 LSTTL Loads with Suitable Pull−up
Resistor
• Outputs Directly Interface to CMOS, NMOS and TTL
• High Noise Immunity Characteristic of CMOS Devices
• Operating Voltage Range: 2.0 to 6.0 V
• Low Input Current: 1 mA
• In Compliance With the JEDEC Standard No. 7A Requirements
• Chip Complexity: 36 FETs or 9 Equivalent Gates
• These are Pb−Free Devices
LOGIC DIAGRAM
Y1A1
A2
A3
A4
A5
A6
Y2
Y3
Y4
Y5
Y6
1
3
5
9
11
13
2
4
6
8
10
12
Y = A
Pinout: 14−Lead Packages (Top View)
1314 12 11 10 9 8
21 34567
V
CC
A6 Y6 A5 Y5 A4 Y4
A1 Y1 A2 Y2 A3 Y3 GND
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MARKING
DIAGRAMS
A = Assembly Location
WL or L = Wafer Lot
YY or Y = Year
WW or W = Work Week
G or G = Pb−Free Package
TSSOP−14
DT SUFFIX
CASE 948G
14
1
SOIC−14
D SUFFIX
CASE 751A
14
1
HC05AG
AWLYWW
1
14
HC
05
ALYWG
G
1
14
L
H
FUNCTION TABLE
Inputs Outputs
A
H
L
Y
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION
(Note: Microdot may be in either location)
MC74HC05A
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2
MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CC
DC Supply Voltage (Referenced to GND) – 0.5 to + 7.0 V
V
in
DC Input Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
V
out
DC Output Voltage (Referenced to GND) – 0.5 to V
CC
+ 0.5 V
I
in
DC Input Current, per Pin ± 20 mA
I
out
DC Output Current, per Pin ± 25 mA
I
CC
DC Supply Current, V
CC
and GND Pins ± 50 mA
P
D
Power Dissipation in Still Air, SOIC Package†
TSSOP Package†
500
450
mW
T
stg
Storage Temperature – 65 to + 150
_C
T
L
Lead Temperature, 1 mm from Case for 10 Seconds
SOIC or TSSOP Package
260
_C
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the
Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect
device reliability.
*This device contains protection circuitry to guard against damage due to high static voltages or electric fields. However, precautions must be
taken to avoid applications of any voltage higher than maximum rated voltages to this high−impedance circuit. For proper operation, V
in
and
V
out
should be constrained to the range GND v (V
in
or V
out
) v V
CC
. Unused inputs must always be tied to an appropriate logic voltage level
(e.g., either GND or V
CC
). Unused outputs must be left open.
†Derating − SOIC Package: – 7 mW/_C from 65_ to 125_C
TSSOP Package: − 6.1 mW/_C from 65_ to 125_C
RECOMMENDED OPERATING CONDITIONS
Symbol Parameter Min Max Unit
V
CC
DC Supply Voltage (Referenced to GND) 2.0 6.0 V
V
in
, V
out
DC Input Voltage, Output Voltage (Referenced to GND) 0 V
CC
V
T
A
Operating Temperature, All Package Types – 55 + 125
_C
t
r
, t
f
Input Rise and Fall Time V
CC
= 2.0 V
(Figure 1) V
CC
= 4.5 V
V
CC
= 6.0 V
0
0
0
1000
500
400
ns
MC74HC05A
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3
DC CHARACTERISTICS (Voltages Referenced to GND)
V
CC
V
Guaranteed Limit
Symbol Parameter Condition −55 to 25°C ≤85°C ≤125°C Unit
V
IH
Minimum High−Level Input Voltage V
out
= 0.1V or V
CC
−0.1V
|I
out
| ≤ 20mA
2.0
4.5
6.0
1.50
3.15
4.20
1.50
3.15
4.20
1.50
3.15
4.20
V
V
IL
Maximum Low−Level Input Voltage V
out
= 0.1V or V
CC
− 0.1V
|I
out
| ≤ 20mA
2.0
4.5
6.0
0.50
1.35
1.80
0.50
1.35
1.80
0.50
1.35
1.80
V
V
OL
Maximum Low−Level Output
Voltage
V
out
= 0.1V or V
CC
− 0.1V
|I
out
| ≤ 20mA
2.0
4.5
6.0
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
0.1
V
V
in
= V
IH
or V
IL
|I
out
| ≤ 4.0mA
|I
out
| ≤ 5.2mA
4.5
6.0
0.26
0.26
0.33
0.33
0.40
0.40
I
in
Maximum Input Leakage Current V
in
= V
CC
or GND 6.0 ±0.1 ±1.0 ±1.0
mA
I
CC
Maximum Quiescent Supply
Current (per Package)
V
in
= V
CC
or GND
I
out
= 0mA
6.0 1.0 10 40
mA
I
OZ
Maximum Three−State Leakage
Current
Output in High−Impedance State
V
in
= V
IL
or V
IH
V
out
= V
CC
or GND
6.0 ±0.5 ±5.0 ±10
mA
AC CHARACTERISTICS (C
L
= 50pF, Input t
r
= t
f
= 6ns)
V
CC
V
Guaranteed Limit
Symbol Parameter −55 to 25°C ≤85°C ≤125°C Unit
t
PLZ
,
t
PZL
Maximum Propagation Delay, Input A or B to Output Y
(Figures 1 and 2)
2.0
4.5
6.0
90
18
15
115
23
20
135
27
23
ns
t
THL
Maximum Output Transition Time, Any Output
(Figures 1 and 2)
2.0
4.5
6.0
75
15
13
95
19
16
110
22
19
ns
C
in
Maximum Input Capacitance 10 10 10 pF
C
out
Maximum Three−State Output Capacitance
(Output in High−Impedance State)
10 10 10 pF
C
PD
Power Dissipation Capacitance (Per Buffer)*
Typical @ 25°C, V
CC
= 5.0 V, V
EE
= 0 V
pF
4.0
* Used to determine the no−load dynamic power consumption: P
D
= C
PD
V
CC
2
f + I
CC
V
CC
.
P1-P3P4-P6

MC74HC05ADR2G

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Manufacturer:
ON Semiconductor
Description:
Inverters IC HEX INV W OD OUT
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