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NTD20N03L27

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2014
September, 2014 − Rev. 6
1 Publication Order Number:
NTD20N03L27/D
NTD20N03L27, NVD20N03L27
Power MOSFET
20 A, 30 V, N−Channel DPAK
This logic level vertical power MOSFET is a general purpose part
that provides the “best of design” available today in a low cost power
package. Avalanche energy issues make this part an ideal design in.
The drain−to−source diode has a ideal fast but soft recovery.
Features
• Ultra−Low R
DS(on)
, Single Base, Advanced Technology
• SPICE Parameters Available
• Diode is Characterized for use in Bridge Circuits
• I
DSS
and V
DS(on)
Specified at Elevated Temperatures
• High Avalanche Energy Specified
• ESD JEDAC rated HBM Class 1, MM Class A, CDM Class 0
• NVD Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free and are RoHS Compliant
Typical Applications
• Power Supplies
• Inductive Loads
• PWM Motor Controls
• Replaces MTD20N03L in many Applications
MAXIMUM RATINGS (T
C
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage V
DSS
30 Vdc
Drain−to−Gate Voltage (R
GS
= 1.0 MW)
V
DGR
30 Vdc
Gate−to−Source Voltage
− Continuous
− Non−Repetitive (t
p
v10 ms)
V
GS
V
GS
±20
±24
Vdc
Drain Current
− Continuous @ T
A
= 25_C
− Continuous @ T
A
= 100_C
− Single Pulse (t
p
v10 ms)
I
D
I
D
I
DM
20
16
60
Adc
Apk
Total Power Dissipation @ T
A
= 25_C
Derate above 25°C
Total Power Dissipation @ T
C
= 25°C (Note 1)
P
D
74
0.6
1.75
W
W/°CW
Operating and Storage Temperature Range T
J
, T
stg
−55 to
150
°C
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
J
= 25°C
(V
DD
= 30 Vdc, V
GS
= 5 Vdc, L = 1.0 mH,
I
L(pk)
= 24 A, V
DS
= 34 Vdc)
E
AS
288 mJ
Thermal Resistance
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
R
q
JC
R
q
JA
R
q
JA
1.67
100
71.4
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8″ from case for 10 seconds
T
L
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
pad size and repetitive rating; pulse width limited by maximum junction
temperature.
20 A, 30 V, R
DS(on)
= 27 mW
N−Channel
D
S
G
1
Gate
3
Source
2
Drain
4
Drain
DPAK
CASE 369C
STYLE 2
A = Assembly Location*
20N3L = Device Code
Y = Year
WW = Work Week
G = Pb−Free Package
1
2
3
4
MARKING DIAGRAM
& PIN ASSIGNMENTS
AYWW
20
N3LG
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
http://onsemi.com
* The Assembly Location code (A) is front side
optional. In cases where the Assembly Location is
stamped in the package, the front side assembly
code may be blank.
NTD20N03L27, NVD20N03L27
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 2)
(V
GS
= 0 Vdc, I
D
= 250 mAdc)
Temperature Coefficient (Positive)
V
(BR)DSS
30
−
−
43
−
−
Vdc
mV/°C
Zero Gate Voltage Drain Current
(V
DS
= 30 Vdc, V
GS
= 0 Vdc)
(V
DS
= 30 Vdc, V
GS
= 0 Vdc, T
J
=150°C)
I
DSS
−
−
−
−
10
100
mAdc
Gate−Body Leakage Current (V
GS
= ± 20 Vdc, V
DS
= 0 Vdc) I
GSS
− − ±100 nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (Note 2)
(V
DS
= V
GS
, I
D
= 250 mAdc)
Threshold Temperature Coefficient (Negative)
V
GS(th)
1.0
−
1.6
5.0
2.0
−
Vdc
mV/°C
Static Drain−to−Source On−Resistance (Note 2)
(V
GS
= 4.0 Vdc, I
D
= 10 Adc)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc)
R
DS(on)
−
−
28
23
31
27
mW
Static Drain−to−Source On−Voltage (Note 2)
(V
GS
= 5.0 Vdc, I
D
= 20 Adc)
(V
GS
= 5.0 Vdc, I
D
= 10 Adc, T
J
= 150°C)
V
DS(on)
−
−
0.48
0.40
0.54
−
Vdc
Forward Transconductance (Note 2) (V
DS
= 5.0 Vdc, I
D
= 10 Adc) g
FS
− 21 − mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
DS
= 25 Vdc, V
GS
= 0 Vdc,
f = 1.0 MHz)
C
iss
− 1005 1260 pF
Output Capacitance C
oss
− 271 420
Transfer Capacitance C
rss
− 87 112
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
(V
DD
= 20 Vdc, I
D
= 20 Adc,
V
GS
= 5.0 Vdc,
R
G
= 9.1 W) (Note 2)
t
d(on)
− 17 25 ns
Rise Time t
r
− 137 160
Turn−Off Delay Time t
d(off)
− 38 45
Fall Time t
f
− 31 40
Gate Charge
(V
DS
= 48 Vdc, I
D
= 15 Adc,
V
GS
= 10 Vdc) (Note 2)
Q
T
− 13.8 18.9 nC
Q
1
− 2.8 −
Q
2
− 6.6 −
SOURCE−DRAIN DIODE CHARACTERISTICS
Forward On−Voltage
(I
S
= 20 Adc, V
GS
= 0 Vdc) (Note 2)
(I
S
= 20 Adc, V
GS
= 0 Vdc, T
J
= 125°C)
V
SD
−
−
1.0
0.9
1.15
−
Vdc
Reverse Recovery Time
(I
S
=15 Adc, V
GS
= 0 Vdc,
dl
S
/dt = 100 A/ms) (Note 2)
t
rr
− 23 −
ns
t
a
− 13 −
t
b
− 10 −
Reverse Recovery Stored Charge Q
RR
− 0.017 −
mC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperature.
ORDERING INFORMATION
Device Package Shipping
†
NTD20N03L27T4G DPAK
(Pb−Free)
2500 / Tape & Reel
NVD20N03L27T4G* DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NVD Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
NTD20N03L27, NVD20N03L27
http://onsemi.com
3
1.6
1.4
1
1.2
0.8
0.6
10
1
100
1000
24
16
28
12
20
0
40
0.015
0
30
1
15
0.40.2
−I
D
, DRAIN CURRENT (AMPS)
0
−V
GS
, GATE−TO−SOURCE VOLTAGE (V)
Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics
I
D
, DRAIN CURRENT (AMPS)
2
0.04
0.035
0.03
0.025
221512
0.02
0.015
0.01
0.005
0
5252832
Figure 3. On−Resistance vs. Drain Current and
Temperature
I
D
, DRAIN CURRENT (AMPS)
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
I
D
, DRAIN CURRENT (AMPS)
Figure 5. On−Resistance Variation with
Temperature
T
J
, JUNCTION TEMPERATURE (°C)
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
−I
DSS
, LEAKAGE (nA)
40
−50 75500−25 100 150
0.5 1.5 5
028322420 3616 4
0
0.02
0.01
0.025
0.03
01215961833
0
−V
DS
, DRAIN−TO−SOURCE VOLTAGE (V)
5
10
20
25
35
1.4 2
4
0.6 0.8 1.2 1.6 1.8 1 2 2.5 3 3.5 4 4.5
818 3538
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (W)
R
DS(on)
, DRAIN−TO−SOURCE RESISTANCE (
W
)
4812
12525 21 24 27
V
GS
= 10 V
V
GS
= 8 V
V
GS
= 6 V
V
GS
= 5 V
V
GS
= 4.5 V
V
GS
= 4 V
V
GS
= 3.5 V
V
GS
= 3 V
V
GS
= 2.5 V
8
32
36
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
V
DS
> = 10 V
V
GS
= 5 V
T
J
= 25°C
T
J
= 100°C
T
J
= −55°C
V
GS
= 5 V
V
GS
= 10 V
T
J
= 25°C
I
D
= 10 A
V
GS
= 5 V
T
J
= 100°C
T
J
= 125°C
V
GS
= 0 V
T
J
= 25°C
P1-P3P4-P5

NTD20N03L27

Mfr. #:
Buy NTD20N03L27
Manufacturer:
ON Semiconductor
Description:
MOSFET 30V 20A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
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