Data sheet 1 Rev. 1.11, 2008-12-09
Smart Power High-Side-Switch
One Channel: 20 mΩ
BTS441T
Product Summary Package
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N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS
technology. • Green Product (RoHS compliant)
Providing embedded protective functions. • AEC Qualified
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μC compatible power switch for 5V, 12 V and 24 V DC applications
All types of resistive, inductive and capacitve loads
Most suitable for loads with high inrush currents, so as lamps
Replaces electromechanical relays, fuses and discrete circuits
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Very low standby current
Optimized static electromagnetic compatibility (EMC)
µC and CMOS compatible
Fast demagnetization of inductive loads
Stable behaviour at undervoltage
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Short circuit protection
Current limitation
Overload protection
Thermal shutdown
Overvoltage protection (including load dump) with external
GND-resistor
Reverse battery protection with external GND-resistor
Loss of ground and loss of
V
bb
protection
Electrostatic discharge (ESD) protection
On-state Resistance R
ON
20mΩ
Operating Voltage V
bb(on)
4.75 ... 41V
Nominal load current I
L(ISO)
21A
Current limitation I
L(lim)
65A
TO-220-5-11 TO-263-5-2 TO-220-5-12
Standard SMD Straight
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BTS441T
Data sheet 2 Rev. 1.11, 2008-12-09
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Data sheet 3 Rev. 1.11, 2008-12-09
BTS441T
Maximum Ratings at T
j
= 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage (overvoltage protection see page 4)
V
bb
43 V
Supply voltage for full short circuit protection
T
j Start
=-40 ...+150°C
V
bb
34 V
Load dump protection
1)
V
LoadDump
=
V
A
+
V
s
,
V
A
= 13.5 V
R
I
2)
= 2 Ω,
R
L
= 0,5 Ω,
t
d
= 200 ms, IN= low or high
V
Load dump
3)
60 V
Load current (Short-circuit current, see page 5)
I
L
self-limited A
Operating temperature range
Storage temperature range
T
j
T
stg
-40 ...+150
-55 ...+150
°C
Power dissipation (DC) ; TC25°C
P
tot
125 W
Maximal switchable inductance, single pulse
V
bb
= 12V,
T
j,start
= 150°C,
T
C
= 150°C const.
(see diagram, p.8)
I
L(ISO)
= 21 A, RL= 0 Ω:
E
4
)
AS
=0.7J: Z
L
2.1 mH
Electrostatic discharge capability (ESD) IN:
(Human Body Model) Out to all other pins shorted:
acc. MIL-STD883D, method 3015.7 and
ESD assn. std. S5.1-1993; R=1.5kΩ; C=100pF
V
ESD
1.0
8.0
kV
Input voltage (DC)
V
IN
-10 ... +16 V
Current through input pin (DC)
see internal circuit diagrams page 7
I
IN
±2.0 mA
Thermal resistance chip - case:
junction - ambient (free air):
R
thJC
R
thJA
1
75
K/W
SMD version, device on pcb
5)
: 33
1)
Supply voltages higher than V
bb(AZ)
require an external current limit for the GND pin, e.g. with a 150 Ω
resistor in the GND connection. A resistor for the protection of the input is integrated.
2)
R
I
= internal resistance of the load dump test pulse generator
3)
V
Load dump
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
4)
E
AS
is the maximum inductive switch off energy
5)
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
2
(one layer, 70μm thick) copper area for V
bb
connection. PCB is vertical without blown air.

BTS441TAKSA1

Mfr. #:
Manufacturer:
Infineon Technologies
Description:
IC HIGH SIDE PWR SWITCH TO220-5
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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