June 2006 Rev 3 1/14
14
STP36NF06L
STB36NF06L
N-channel 60V - 0.032 - 30A - TO-220 - D
2
PA K
STripFET™ II Power MOSFET
General features
Exceptional dv/dt capability
100% avalanche tested
Low threshold drive
Description
This Power MOSFET is the latest development of
STMicroelectronics unique “Single Feature
Size™” strip-based process. The resulting
transistor shows extremely high packing density
for low on-resistance, rugged avalanche
characteristics and less critical alignment steps
therefore a remarkable manufacturing
reproducibility.
Applications
Switching application
Internal schematic diagram
Type V
DSS
R
DS(on)
I
D
STP36NF06L 60V < 0.04 30A
STB36NF06L 60V < 0.04 30A
D²PAK
TO-220
1
2
3
1
3
www.st.com
Order codes
Sales type Marking Package Packaging
STP36NF06L P36NF06L TO-220 Tube
STB36NF06L B36NF06 D²PAK Tape & reel
Contents: STP36NF06L - STB36NF06L
2/14
Contents:
1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
3 Test circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5 Packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
6 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
STP36NF06L - STB36NF06L Electrical ratings
3/14
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol Parameter Value Unit
V
DS
Drain-source Voltage (V
GS
=0)
60 V
V
DGR
Drain-gate voltage (R
GS
=20K)
60 V
V
GS
Gate-source voltage ±18 V
I
D
Drain-current (continuos) at Tc=25°C 30 A
I
D
Drain-current (continuos) at Tc=100°C 21 A
I
DM
(1)
1. Pulse width limited by safe operating area.
Drain-current (pulsed) 120 A
P
TOT
Total dissipation at Tc=25°C 70 W
Derating factor 0.47 W/°C
dv/dt
(2)
2. I
SD
30A, di/dt 400A/µs, V
DD
< V
(BR)DSS.
Tj < Tjmax
Peak diode recovery voltage slope 10 V/ns
E
AS
(3)
3. Starting Tj=25°C, I
D
=15A, V
DD
=30V
Single pulse avalanche energy 225 mJ
T
j
T
stg
Operating junction temperature
Storage temperature
-55 to 175 °C
Table 2. Thermal resistance
Symbol Parameter Value Unit
Rthj-case Thermal resistance junction-case max 2.14 °C/W
Rthj-amb Thermal resistance junction-ambient (free air) max 62.5 °C/W
T
l
Maximum lead temperature for soldering purpose 300 °C

STB36NF06LT4

Mfr. #:
Manufacturer:
STMicroelectronics
Description:
MOSFET 60V 0.032Ohm 30A N-Channel
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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