IRF520S, SiHF520S
www.vishay.com
Vishay Siliconix
S16-1000-Rev. D, 23-May-16
1
Document Number: 91018
For technical questions, contact: hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Power MOSFET
FEATURES
• Halogen-free According to IEC 61249-2-21
Definition
• Surface Mount
• Available in Tape and Reel
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
Note
*
This datasheet provides information about parts that are
RoHS-compliant and / or parts that are non-RoHS-compliant. For
example, parts with lead (Pb) terminations are not RoHS-compliant.
Please see the information / tables in this datasheet for details.
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the
designer with the best combination of fast switching,
ruggedized device design, low on-resistance and
cost-effectiveness.
The D
2
PAK (TO-263) is a surface mount power package
capable of accommodating die size up to HEX-4. It provides
the highest power capability and the lowest possible
on-resistance in any existing surface mount package. The
D
2
PAK (TO-263) is suitable for high current applications
because of its low internal connection resistance and can
dissipate up to 2.0 W in a typical surface mount application.
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. V
DD
= 25 V, starting T
J
= 25 °C, L = 3.5 mH, R
g
= 25 , I
AS
= 9.2 A (see fig. 12).
c. I
SD
9.2 A, dI/dt 110 A/μs, V
DD
V
DS
, T
J
175 °C.
d. 1.6 mm from case.
e. When mounted on 1" square PCB (FR-4 or G-10 material).
PRODUCT SUMMARY
V
DS
(V) 100
R
DS(on)
()V
GS
= 10 V 0.27
Q
g
(Max.) (nC) 16
Q
gs
(nC) 4.4
Q
gd
(nC) 7.7
Configuration Single
Available
Available
ORDERING INFORMATION
Package D
2
PAK (TO-263)
Lead (Pb)-free and Halogen-free
SiHF520S-GE3
SiHF520STRR-GE3
SiHF520STRL-GE3
Lead (Pb)-free IRF520SPbF
ABSOLUTE MAXIMUM RATINGS (T
C
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL LIMIT UNIT
Drain-Source Voltage V
DS
100
V
Gate-Source Voltage V
GS
± 20
Continuous Drain Current V
GS
at 10 V
T
C
= 25 °C
I
D
9.2
AT
C
= 100 °C 6.5
Pulsed Drain Current
a
I
DM
37
Linear Derating Factor 0.40
W/°C
Linear Derating Factor (PCB Mount)
e
0.025
Single Pulse Avalanche Energy
b
E
AS
200 mJ
Avalanche Currenta I
AR
9.2 A
Repetitive Avalanche Energy
a
E
AR
6.0 mJ
Maximum Power Dissipation T
C
= 25 °C
P
D
60
W
Maximum Power Dissipation (PCB Mount)
e
T
A
= 25 °C 3.7
Peak Diode Recovery dV/dt
c
dV/dt 5.5 V/ns
Operating Junction and Storage Temperature Range T
J
, T
stg
- 55 to + 175
°C
Soldering Recommendations (Peak Temperature) For 10 s 300
d