FDW2508P

December 2001
2001 Fairchild Semiconductor Corporation
FDW2508P Rev. E (W)
FDW2508P
Dual P-Channel 1.8 V Specified PowerTrench
MOSFET
General Description
This P-Channel –1.8V specified MOSFET uses
Fairchild’s advanced low voltage PowerTrench process.
It has been optimized for battery power management
applications.
Applications
Power management
Load switch
Battery protection
Features
–6 A, –12 V. R
DS(ON)
= 18 m @ V
GS
= –4.5 V
R
DS(ON)
= 22 m @ V
GS
= –2.5 V
R
DS(ON)
= 30 m @ V
GS
= –1.8 V
Low gate charge(26nC typical)
High performance trench technology for extremely
low R
DS(ON)
Low profile TSSOP-8 package
D
1
S
1
S
1
G
1
D
2
S
2
S
2
G
2
TSSOP-8
Pin 1
8
7
6
5
1
2
3
4
Absolute Maximum Ratings T
A
=25
o
C unless otherwise noted
Symbol Parameter Ratings Units
V
DSS
Drain-Source Voltage –12 V
V
GSS
Gate-Source Voltage
±8
V
I
D
Drain Current – Continuous (Note 1) –6 A
Pulsed –30
P
D
Power Dissipation for Single Operation (Note 1a) 1.3 W
(Note 1b)
1
T
J
, T
STG
Operating and Storage Junction Temperature Range –55 to +150
°C
Thermal Characteristics
R
θJA
Thermal Resistance, Junction-to-Ambient
(Note 1a) 100
°C/W
(Note 1b)
125
Package Marking and Ordering Information
Device Marking Device Reel Size Tape width Quantity
2508P FDW2508P 13’’ 12mm 2500 units
FDW2508P
FDW2508P Rev. E (W)
Electrical Characteristics T
A
= 25°C unless otherwise noted
Symbol Parameter Test Conditions Min Typ Max Units
Off Characteristics
BV
DSS
Drain–Source Breakdown Voltage
V
GS
= 0 V, I
D
= –250 µA
–12 V
BVDSS
T
J
Breakdown Voltage Temperature
Coefficient
I
D
= –250 µA, Referenced to 25°C
–2
mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= –10 V, V
GS
= 0 V –1
µA
I
GSSF
Gate–Body Leakage, Forward V
GS
= 8 V, V
DS
= 0 V 100 nA
I
GSSR
Gate–Body Leakage, Reverse V
GS
= –8 V, V
DS
= 0 V –100 nA
On Characteristics (Note 2)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= –250 µA
–0.4 –0.5 –1.5 V
VGS(th)
T
J
Gate Threshold Voltage
Temperature Coefficient
I
D
= –250 µA, Referenced to 25°C
2.7
mV/°C
R
DS(on)
Static Drain–Source
On–Resistance
V
GS
= –4.5 V, I
D
= –6 A
V
GS
= –2.5 V, I
D
= –5 A
V
GS
= –1.8 V, I
D
= –4 A
V
GS
= –4.5 V, I
D
= –6A, T
J
=125°C
14
17
22
18
18
22
30
25
m
I
D(on)
On–State Drain Current V
GS
= –4.5 V, V
DS
= –5 V –30 A
g
FS
Forward Transconductance V
DS
= –5 V, I
D
= –6 A 32 S
Dynamic Characteristics
C
iss
Input Capacitance 2644 pF
C
oss
Output Capacitance 987 pF
C
rss
Reverse Transfer Capacitance
V
DS
= –6 V, V
GS
= 0 V,
f = 1.0 MHz
602 pF
Switching Characteristics (Note 2)
t
d(on)
Turn–On Delay Time 14 25 ns
t
r
Turn–On Rise Time 9.1 18 ns
t
d(off)
Turn–Off Delay Time 122 195 ns
t
f
Turn–Off Fall Time
V
DD
= –6 V, I
D
= –1 A,
V
GS
= –4.5 V, R
GEN
= 6
89 142 ns
Q
g
Total Gate Charge 26 36 nC
Q
gs
Gate–Source Charge 4 nC
Q
gd
Gate–Drain Charge
V
DS
= –6 V, I
D
= –6 A,
V
GS
= –4.5 V
7 nC
Drain–Source Diode Characteristics and Maximum Ratings
I
S
Maximum Continuous Drain–Source Diode Forward Current –1.1 A
V
SD
Drain–Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= –1.1 A (Note 2) –0.59 –1.2 V
Notes:
1. R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a) R
θJA
is 100°C/W (steady state) when mounted on a 1 inch² copper pad on FR-4.
b) R
θJA
is 125°C/W (steady state) when mounted on a minimum copper pad on FR-4.
2. Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDW2508P
FDW2508P Rev. E (W)
Typical Characteristics
0
15
30
45
60
01234
-V
DS
, DRAIN TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
V
GS
= -4.5V
-3.0V
-2.5V
-1.8V
-2.0V
-1.5V
0.8
1
1.2
1.4
1.6
1.8
2
0 15304560
-I
D
, DIRAIN CURRENT (A)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= -1.8V
-3.0V
-2.0V
-4.5V
-2.5V
-3.5V
Figure 1. On-Region Characteristics. Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.6
0.8
1
1.2
1.4
-50-250 255075100125150
T
J
, JUNCTION TEMPERATURE (
o
C)
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= -6A
V
GS
= -4.5V
0.005
0.015
0.025
0.035
0.045
12345
-V
GS
, GATE TO SOURCE VOLTAGE (V)
R
DS(ON)
, ON-RESISTANCE (OHM)
I
D
= -3A
T
A
= 125
o
C
T
A
= 25
o
C
Figure 3. On-Resistance Variation with
Temperature.
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
0
10
20
30
40
0.6 1 1.4 1.8 2.2
-V
GS
, GATE TO SOURCE VOLTAGE (V)
-I
D
, DRAIN CURRENT (A)
T
A
= -55
o
C
25
o
C
125
o
C
V
DS
= -5V
0.0001
0.001
0.01
0.1
1
10
100
00.20.40.60.811.2
-V
SD
,
BODY DIODE FORWARD VOLTAGE (V)
-I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0V
T
A
= 125
o
C
25
o
C
-55
o
C
Figure 5. Transfer Characteristics. Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDW2508P

FDW2508P

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
MOSFET 2P-CH 12V 6A 8-TSSOP
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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