http://www.littelfuse.com E9 - 2 ©2004 Littelfuse, Inc.
+1 972-580-7777 Thyristor Product Catalog
Sidac Data Sheets
Specific Test Conditions
di/dt — Critical rate-of-rise of on-state current
dv/dt — Critical rate-of-rise of off-state voltage at rated V
DRM
;
T
J
≤ 100 °C
dV
q
/dt — Critical rate-of-rise of turn-off voltage at 8 kHz
I
BO
— Breakover current 50/60 Hz sine wave
I
DRM
— Repetitive peak off-state current 50/60 Hz sine wave; V = V
DRM
I
H
— Dynamic holding current 50/60 Hz sine wave; R = 100 Ω
I
T(RMS)
— On-state RMS current T
J
≤ 125 °C 50/60 Hz sine wave
I
TSM
— Peak one-cycle surge current 50/60 Hz sine wave (non-
repetitive)
R
S
— Switching resistance 50/60 Hz sine wave
V
BO
— Breakover voltage 50/60 Hz sine wave
V
DRM
— Repetitive peak off-state voltage
V
TM
— Peak on-state voltage; I
T
= 1 A
General Notes
• All measurements are made at 60 Hz with a resistive load at an
ambient temperature of +25 °C unless otherwise specified.
• Storage temperature range (T
S
) is -65 °C to +150 °C.
• The case (T
C
) or lead (T
L
) temperature is measured as shown on
the dimensional outline drawings in the “Package Dimensions” sec-
tion of this catalog.
• Junction temperature range (T
J
) is -40 °C to +125 °C.
• Lead solder temperature is a maximum of +230 °C for 10 s maxi-
mum; ≥1/16" (1.59 mm) from case.
Electrical Specification Notes
(1) See Figure E9.5 for V
BO
change versus junction temperature.
(2) See Figure E9.6 for I
BO
versus junction temperature.
(3) See Figure E9.2 for I
H
versus case temperature.
(4) See Figure E9.13 for test circuit.
(5) See Figure E9.1 for more than one full cycle rating.
(6) T
C
≤ 90 °C for TO-92 Sidac
T
C
≤ 105 °C for TO-202 Sidacs
T
L
≤ 100 °C for DO-15X
T
L
≤ 90 °C for DO-214
(7) See Figure E9.14 for clarification of sidac operation.
(8) For best sidac operation, the load impedance should be near or
less than switching resistance.
(9) See package outlines for lead form configurations. When ordering
special lead forming, add type number as suffix to part number.
(10) Do not use electrically connected mounting tab or center lead.
(11) The K2401F1 sidac is designed to ensure good commutation at
higher switching frequencies, as required in ignitor circuits for high
intensity discharge (HID) lighting. A typical circuit for a metal halide
lamp ignitor is shown in Figure E9.17. With proper component
selection this circuit will produce three pulses for ignition of Osram
lamp types such as HQI-T70W, HQI-T150W, and HQI-T250W which
require a minimum of three pulses at 4 kV magnitude and >1 µs
duration each at a minimum repetition rate of 3.3 kHz.
V-I Characteristics
Type
Part No.
I
T(RMS)
V
DRM
V
BO
I
DRM
I
BO
I
H
TO-92 DO-15X
(10)
TO-202
DO-214
(6) (7) (8)
Amps Volts
(1)
Volts µAmps
(2)
µAmps
(3) (4)
mAmps
See “Package Dimensions” section for variations. (9) MAX MIN MIN MAX MAX MAX TYP MAX
K0900E70 K0900G K0900S 1 ±70 79 97 5 10 60 150
K1050E70 K1050G K1050S 1 ±90 95 113 5 10 60 150
K1100E70 K1100G K1100S 1 ±90 104 118 5 10 60 150
K1200E70 K1200G K1200S 1 ±90 110 125 5 10 60 150
K1300E70 K1300G K1300S 1 ±90 120 138 5 10 60 150
K1400E70 K1400G K1400S 1 ±90 130 146 5 10 60 150
K1500E70 K1500G K1500S 1 ±90 140 170 5 10 60 150
K2000E70 K2000G K2000F1 K2000S 1 ±180 190 215 5 10 60 150
K2200E70 K2200G K2200F1 K2200S 1 ±180 205 230 5 10 60 150
K2400E70 K2400G K2400F1 K2400S 1 ±190 220 250 5 10 60 150
K2401F1 (11) ±190 220 250 5 10 60 150
K2500E70 K2500G K2500F1 K2500S 1 ±200 240 280 5 10 60 150
K3000F1 1 ±200 270 330 5 10 60 150
Pin 1
Pin 2
Do not use
Pin 3
Do
not
use
tab
R
S
V
BO
V
S
–()
I
S
I
BO
–()
--------------------------------=
-V
+I
V
DRM
+V
V
S
I
S
I
H
R
S
I
DRM
I
BO
V
BO
V
T
I
T
(I
S
- I
BO
)
(V
BO
- V
S
)
R
S
=
-I
