Data Sheet No. PD60043 Rev.O
Typical Connection
Features
Floating channel designed for bootstrap operation
Fully operational to +600V
Tolerant to negative transient voltage
dV/dt immune
Gate drive supply range from 10 to 20V
Undervoltage lockout
3.3V, 5V, and 15V logic input compatible
Matched propagation delay for both channels
Outputs in phase with inputs (IR2101) or out of
phase with inputs (IR2102)
Also available LEAD-FREE
HIGH AND LOW SIDE DRIVER
Product Summary
V
OFFSET
600V max.
I
O
+/- 130 mA / 270 mA
V
OUT
10 - 20V
t
on/off
(typ.) 160 & 150 ns
Delay Matching 50 ns
IR2101
(
S
)
/IR2102
(
S
)
& (PbF)
Description
The IR2101(S)/IR2102(S) are high voltage, high speed
power MOSFET and IGBT drivers with independent
high and low side referenced output channels. Pro-
prietary HVIC and latch immune CMOS technologies
enable ruggedized monolithic construction. The logic
input is compatible with standard CMOS or LSTTL
output, down to 3.3V logic. The output drivers feature a high pulse current buffer stage designed for minimum
driver cross-conduction. The floating channel can be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 volts.
www.irf.com 1
(Refer to Lead Assignments for correct pin
configuration). This/These diagram(s) show
electrical connections only. Please refer to
our Application Notes and DesignTips for
proper circuit board layout.
IR2102
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
IR2101
V
CC
V
B
V
S
HO
LOCOM
HIN
LIN
LIN
HIN
up to 600V
TO
LOAD
V
CC
Packages
8-Lead SOIC
IR2101S/IR2102S
8-Lead PDIP
IR2101/IR2102
IR2101
(
S
)
/IR2102
(
S
) & (PbF)
2 www.irf.com
Symbol Definition Min. Max. Units
V
B
High side floating supply voltage -0.3 625
V
S
High side floating supply offset voltage V
B
- 25 V
B
+ 0.3
V
HO
High side floating output voltage V
S
- 0.3 V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage -0.3 25
V
LO
Low side output voltage -0.3 V
CC
+ 0.3
V
IN
Logic input voltage (HIN & LIN) -0.3 V
CC
+ 0.3
dV
S
/dt Allowable offset supply voltage transient 50 V/ns
P
D
Package power dissipation @ T
A
+25°C (8 lead PDIP) 1.0
(8 lead SOIC) 0.625
Rth
JA
Thermal resistance, junction to ambient (8 lead PDIP) 125
(8 lead SOIC) 200
T
J
Junction temperature 150
T
S
Storage temperature -55 150
T
L
Lead temperature (soldering, 10 seconds) 300
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage param-
eters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are measured
under board mounted and still air conditions.
W
°C/W
V
°C
Symbol Definition Min. Max. Units
V
B
High side floating supply absolute voltage V
S
+ 10 V
S
+ 20
V
S
High side floating supply offset voltage Note 1 600
V
HO
High side floating output voltage V
S
V
B
V
CC
Low side and logic fixed supply voltage 10 20
V
LO
Low side output voltage 0 V
CC
V
IN
Logic input voltage (HIN & LIN) (IR2101) & (HIN & LIN) (IR2102) 0 V
CC
T
A
Ambient temperature -40 125
Note 1: Logic operational for V
S
of -5 to +600V. Logic state held for V
S
of -5V to -V
BS
. (Please refer to the Design Tip
DT97-3 for more details).
Recommended Operating Conditions
The input/output logic timing diagram is shown in figure 1. For proper operation the device should be used within the
recommended conditions. The V
S
offset rating is tested with all supplies biased at 15V differential.
°C
V
IR2101
(
S
)
/IR2102
(
S
) & (PbF)
www.irf.com 3
Symbol Definition Min. Typ. Max. Units Test Conditions
V
IH
Logic “1” input voltage (IR2101)
Logic “0” input voltage (IR2102)
V
IL
Logic “0” input voltage (IR2101)
Logic “1”input voltage (IR2102)
V
OH
High level output voltage, V
BIAS
- V
O
100 I
O
= 0A
V
OL
Low level output voltage, V
O
100 I
O
= 0A
I
LK
Offset supply leakage current 50 V
B
= V
S
= 600V
I
QBS
Quiescent V
BS
supply current 30 55 V
IN
= 0V or 5V
I
QCC
Quiescent V
CC
supply current 150 270 V
IN
= 0V or 5V
I
IN+
Logic “1” input bias current
I
IN-
Logic “0” input bias current
V
CCUV+
V
CC
supply undervoltage positive going 8 8.9 9.8
threshold
V
CCUV-
V
CC
supply undervoltage negative going 7.4 8.2 9
threshold
I
O+
Output high short circuit pulsed current 130 210 V
O
= 0V
V
IN
= Logic “1”
PW10 µs
I
O-
Output low short circuit pulsed current 270 360 V
O
= 15V
V
IN
= Logic “0”
PW10 µs
Symbol Definition Min. Typ. Max. Units Test Conditions
t
on
Turn-on propagation delay 160 220 V
S
= 0V
t
off
Turn-off propagation delay 150 220 V
S
= 600V
t
r
Turn-on rise time 100 170
t
f
Turn-off fall time 50 90
MT Delay matching, HS & LS turn-on/off 50
Static Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V and T
A
= 25°C unless otherwise specified. The V
IN
, V
TH
and I
IN
parameters are referenced to
COM. The V
O
and I
O
parameters are referenced to COM and are applicable to the respective output leads: HO or LO.
Dynamic Electrical Characteristics
V
BIAS
(V
CC
, V
BS
) = 15V, C
L
= 1000 pF and T
A
= 25°C unless otherwise specified.
V
mA
3
V
CC
= 10V to 20V
V
0.8
V
CC
= 10V to 20V
mV
µA
3
10
1
V
IN
= 5V (IR2101)
V
IN
= 5V (IR2102)
V
IN
= 0V (IR2101)
V
IN
= 0V (IR2102)
ns

IR2102SPBF

Mfr. #:
Manufacturer:
Infineon / IR
Description:
Gate Drivers HI LO SIDE DRVR 600V 130mA 160ns
Lifecycle:
New from this manufacturer.
Delivery:
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