SUM110P06-07L
www.vishay.com
Vishay Siliconix
S15-1278-Rev. D, 08-Jun-15
2
Document Number: 72439
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
a. Pulse test; pulse width ≤ 300 μs, duty cycle ≤ 2 %.
b. Guaranteed by design, not subject to production testing.
c. Independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-Source Breakdown Voltage V
DS
V
GS
= 0 V, I
D
= -250 μA -60 - -
V
Gate Threshold Voltage V
GS(th)
V
DS
= V
GS
, I
D
= -250 μA -1 - -3
Gate-Body Leakage I
GSS
V
DS
= 0 V, V
GS
= ± 20 V - - ± 100 nA
Zero Gate Voltage Drain Current I
DSS
V
DS
= -60 V, V
GS
= 0 V - - -1
μAV
DS
= -60 V, V
GS
= 0 V, T
J
= 125 °C - - -50
V
DS
= -60 V, V
GS
= 0 V, T
J
= 175 °C - - -250
On-State Drain Current
a
I
D(on)
V
DS
= -5 V, V
GS
= -10 V -120 - - A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= -10 V, I
D
= -30 A - 0.0055 0.0069
Ω
V
GS
= -10 V, I
D
= -30 A, T
J
= 125 °C - - 0.0115
V
GS
= -10 V, I
D
= -30 A, T
J
= 175 °C - - 0.0138
V
GS
= -4.5 V, I
D
= -20 A - 0.0070 0.0088
Forward Transconductance
a
g
fs
V
DS
= -15 V, I
D
= -50 A 20 - - S
Dynamic
b
Input Capacitance C
iss
V
GS
= 0 V, V
DS
= -25 V, f = 1 MHz
- 11 400 -
pFOutput Capacitance C
oss
- 1200 -
Reverse Transfer Capacitance C
rss
- 900 -
Total Gate Charge
c
Q
g
V
DS
= -30 V, V
GS
= -10 V, I
D
= -110 A
- 230 345
nCGate-Source Charge
c
Q
gs
-50-
Gate-Drain Charge
c
Q
gd
-60-
Gate Resistance R
g
f = 1 MHz - 3 - Ω
Turn-On Delay Time
c
t
d(on)
V
DD
= -30 V, R
L
= 0.27 Ω
I
D
≅ -110 A, V
GEN
= -10 V, R
g
= 1 Ω
-2030
ns
Rise Time
c
t
r
-2540
Turn-Off Delay Time
c
t
d(off)
- 110 200
Fall Time
c
t
f
- 50 100
Drain-Source Body Diode Characteristics (T
C
= 25 °C
b
)
Continuous Current I
S
- - -110
A
Pulsed Current I
SM
- - -240
Forward Voltage
a
V
SD
I
F
= -85 A, V
GS
= 0 V - -1 -1.5 V
Reverse Recovery Time t
rr
I
F
= -85 A, dI/dt = 100 A/μs
- 91 137 ns
Peak Reverse Recovery Charge I
RM(REC)
--6-9A
Reverse Recovery Charge Q
rr
- 0.21 0.44 μC
