OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

BYV42EB-200,118

P1-P3P4-P6P7-P9P10-P10
NXP Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
ESD LIMITING VALUE
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
C
Electrostatic discharge Human body model; - 8 kV
capacitor voltage C = 250 pF; R = 1.5 kΩ
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to per diode - - 2.4 K/W
mounting base both diodes - - 1.4 K/W
R
th j-a
Thermal resistance junction to SOT78 package, in free air - 60 - K/W
ambient SOT404 and SOT428 packages, - 50 - K/W
pcb mounted, minimum footprint,
FR4 board
ELECTRICAL CHARACTERISTICS
characteristics are per diode at T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
F
Forward voltage I
F
= 15 A; T
j
= 150˚C - 0.78 0.85 V
I
F
= 15 A - 0.95 1.05 V
I
F
= 30 A - 1.00 1.20 V
I
R
Reverse current V
R
= V
RWM
; T
j
= 100 ˚C - 0.5 1 mA
V
R
= V
RWM
- 10 100 µA
Q
s
Reverse recovery charge I
F
= 2 A; V
R
≥ 30 V; -dI
F
/dt = 20 A/µs- 6 15 nC
t
rr1
Reverse recovery time I
F
= 1 A; V
R
≥ 30 V; - 20 28 ns
-dI
F
/dt = 100 A/µs
t
rr2
Reverse recovery time I
F
= 0.5 A to I
R
= 1 A; I
rec
= 0.25 A - 13 22 ns
V
fr
Forward recovery voltage I
F
= 1 A; dI
F
/dt = 10 A/µs-1-V
July 1998 2 Rev 1.200
NXP Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
Fig.1. Definition of t
rr1
, Q
s
and I
rrm
Fig.2. Definition of V
fr
Fig.3. Circuit schematic for t
rr2
Fig.4. Definition of t
rr2
Fig.5. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Fig.6. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
Q
s
100%
10%
time
dI
dt
F
I
R
I
F
I
rrm
t
rr
I = 1A
R
rec
I = 0.25A
0A
trr2
0.5A
IF
IR
time
time
V
F
V
fr
V
F
I
F
0 5 10 15 20 25
0
5
10
15
20
0.5
0.2
0.1
BYV42
IF(AV) / A
PF / W
D = 1.0
Tmb(max) / C
150
138
126
114
102
Vo = 0.705 V
Rs = 0.0097 Ohms
D =
t
p
t
p
T
T
t
I
shunt
Current
to ’scope
D.U.T.
Voltage Pulse Source
R
0 5 10 15
0
5
10
15
1.9
2.2
2.8
4
BYV42
IF(AV) / A
PF / W
Tmb(max) / C
150
138
126
114
a = 1.57
Vo = 0.705 V
Rs = 0.0097 Ohms
July 1998 3 Rev 1.200
NXP Semiconductors Product specification
Rectifier diodes BYV42E, BYV42EB series
ultrafast, rugged
Fig.7. Maximum t
rr
at T
j
= 25 ˚C; per diode
Fig.8. Maximum I
rrm
at T
j
= 25 ˚C; per diode
Fig.9. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.10. Maximum Q
s
at T
j
= 25 ˚C; per diode
Fig.11. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
1
10
trr / ns
1 10 100
1000
100
dIF/dt (A/us)
IF=1A
IF=20A
100
10
1.0
1.0 10 100
-dIF/dt (A/us)
Qs / nC
IF=20A
10A
5A
2A
1A
10
1
0.1
0.01
Irrm / A
1
10 100
-dIF/dt (A/us)
IF=1A
IF=20A
1us 10us 100us 1ms 10ms 100ms 1s 10s
0.001
0.01
0.1
1
10
BYV42E
pulse width, tp (s)
Transient thermal impedance, Zth j-mb (K/W)
D =
t
p
t
p
T
T
P
t
D
0
VF / V
50
40
30
20
10
0
0.5 1.51.0
Tj = 150 C
Tj = 25 C
IF / A
max
typ
July 1998 4 Rev 1.200
P1-P3P4-P6P7-P9P10-P10

BYV42EB-200,118

Mfr. #:
Buy BYV42EB-200,118
Manufacturer:
WeEn Semiconductors
Description:
Rectifiers TAPE-7 REC-EPI
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet