APTM100H46FT3G Datasheet APTM100H46FT3G | P1-P3

APTM100H46FT3G

APTM100H46FT3G – Rev 2 October, 2012

www.microsemi.com

1

–

6

16

15

182023 22

13

11

12

14

87

29

30

28 27 26

3

32

31

10

19

2

25

4

All multiple inputs and outputs must be shorted together

Example: 13/14 ; 29/30 ; 22/23 …

Absolute maximum ratings

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Symbol Parameter Max ratings Unit

V

DSS

Drain - Source Breakdown Voltage 1000 V

T

c

= 25°C 19

I

D

Continuous Drain Current

T

c

= 80°C 14

I

DM

Pulsed Drain current 120

A

V

GS

Gate - Source Voltage ±30 V

R

DSon

Drain - Source ON Resistance

552

m

P

D

Maximum Power Dissipation T

c

= 25°C 357 W

I

AR

Avalanche current (repetitive and non repetitive) 16 A

Application

 Welding converters

 Switched Mode Power Supplies

 Uninterruptible Power Supplies

 Motor control

Features

 Power MOS 8™ Fast FREDFETs

- Low R

DSon

- Low input and Miller capacitance

- Low gate charge

- Fast intrinsic reverse diode

- Avalanche energy rated

- Very rugged

 Very low stray inductance

- Symmetrical design

 Kelvin source for easy drive

 Internal thermistor for temperature monitoring

 High level of integration

Benefits

 Outstanding performance at high frequency operation

 Direct mounting to heatsink (isolated package)

 Low junction to case thermal resistance

 Solderable terminals both for power and signal for

easy PCB mounting

 Low profile

 Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

 RoHS Compliant

Full bridge

MOSFET Power Module

V

DSS

= 1000V

R

DSon

= 460m typ @ Tj = 25°C

I

D

= 19A @ Tc = 25°C

APTM100H46FT3G

APTM100H46FT3G – Rev 2 October, 2012

www.microsemi.com

2

–

6

All ratings @ T

j

= 25°C unless otherwise specified

Electrical Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

T

j

= 25°C 250

I

DSS

Zero Gate Voltage Drain Current

V

DS

= 1000V

V

GS

= 0V

T

j

= 125°C 1000

µA

R

DS(on)

Drain – Source on Resistance V

GS

= 10V, I

D

= 16A

460 552

m

V

GS(th)

Gate Threshold Voltage V

GS

= V

DS

, I

D

= 2.5mA 3 4 5 V

I

GSS

Gate – Source Leakage Current V

GS

= ±30 V ±100 nA

Dynamic Characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

C

iss

Input Capacitance 6800

C

oss

Output Capacitance 715

C

rss

Reverse Transfer Capacitance

V

GS

= 0V

V

DS

= 25V

f = 1MHz

92

pF

Q

g

Total gate Charge 260

Q

gs

Gate – Source Charge 46

Q

gd

Gate – Drain Charge

V

GS

= 10V

V

Bus

= 500V

I

D

= 16A

125

nC

T

d(on)

Turn-on Delay Time 36

T

r

Rise Time 37

T

d(off)

Turn-off Delay Time 140

T

f

Fall Time

Resistive switching @ 25°C

V

GS

= 15V

V

Bus

= 667V

I

D

= 16A

R

G

= 2.2

35

ns

Source - Drain diode ratings and characteristics

Symbol Characteristic Test Conditions Min Typ Max Unit

Tc = 25°C

19

I

S

Continuous Source current

(Body diode)

Tc = 80°C

14

A

V

SD

Diode Forward Voltage V

GS

= 0V, I

S

= - 16A 1 V

dv/dt Peak Diode Recovery  25 V/ns

T

j

= 25°C 290

t

rr

Reverse Recovery Time

T

j

= 125°C 600

ns

T

j

= 25°C 1.3

Q

rr

Reverse Recovery Charge

I

S

= - 16A

V

R

= 100V

di

S

/dt = 100A/µs

T

j

= 125°C 3.5

µC

 dv/dt numbers reflect the limitations of the circuit rather than the device itself.

I

S

 - 16A di/dt  1000A/µs V

DD

 667V T

j

 125°C

APTM100H46FT3G

APTM100H46FT3G – Rev 2 October, 2012

www.microsemi.com

3

–

6

Thermal and package characteristics

Symbol Characteristic Min Typ Max Unit

R

thJC

Junction to Case Thermal Resistance

0.35 °C/W

V

ISOL

RMS Isolation Voltage, any terminal to case t =1 min, 50/60Hz

4000 V

T

J

Operating junction temperature range -40 150

T

STG

Storage Temperature Range -40 125

T

C

Operating Case Temperature -40 100

°C

Torque Mounting torque To heatsink M4 2 3 N.m

Wt Package Weight 110 g

Temperature sensor NTC

(see application note APT0406 on www.microsemi.com for more information).

Symbol Characteristic Min Typ Max Unit

R

25

Resistance @ 25°C 50

k

∆R

25

/R

25

5

%

B

25/85

T

25

= 298.15 K 3952

K

∆B/B T

C

=100°C 4

%





























TT

B

R

T

11

exp

25

85/25

25

SP3 Package outline

(dimensions in mm)

See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com

T: Thermistor temperature

R

T

: Thermistor value at T

APTM100H46FT3G

APTM100H46FT3G

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