1N5830R

V
RRM
= 20 V - 40 V
I
F
= 25 A
Features
• High Surge Capability DO-4 Package
• Types up to 40V V
RRM
Parameter Symbol Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
1N5829 thru 1N5831R
Silicon Power
Schottk
y
Diode
Conditions 1N5829 (R) 1N5830 (R) 1N5831 (R)
25
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
20 35
pp g
RMS reverse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter Symbol Unit
Diode forward voltage
Thermal characteristics
Thermal resistance, junction -
case
R
thJC
°C/W
V
R
= 20 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Surge non-repetitive forward
current, Half Sine Wave
I
F,SM
A
mA
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
100 °C
Conditions
1714
1N5829 (R) 1N5830 (R)
1.8 1.8
V
R
= 20 V, T
j
= 125 °C
250 250 250
2520
-55 to 150
-55 to 175 -55 to 175 -55 to 175
2
1N5831 (R)
0.58
22
1.8
25 25 25
800 800 800
25
35
0.58 0.58
-55 to 150 -55 to 150
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1
1N5829 thru 1N5831R
www.genesicsemi.com
2

1N5830R

Mfr. #:
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 25V - 25A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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