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1N5830R
P1-P2
V
RRM
= 20 V - 40 V
I
F
= 25 A
Features
• High Surge Capability
DO-4 Package
• Ty
pes up to 40V V
RRM
Parameter
Sy
mbol
Unit
Re
p
etitive
p
eak reverse volta
g
e
V
RRM
V
1N5829 thru 1N5831R
Silicon Pow
er
Schottk
y
Diode
Conditions
1N5829 (R)
1N5830 (R)
1N5831 (R)
25
Maximu
m ratings, at T
j
= 25 °C, unless oth
erwise specified (
"R" devices have lead
s reversed)
20
35
pp
g
RMS rev
erse voltage
V
RMS
V
DC blocking voltage
V
DC
V
Continuous forward current
I
F
A
Operating temperature
T
j
°C
Storage temperature
T
stg
°C
Parameter
Sy
mbol
Unit
Diode forward v
oltage
Thermal ch
aracteristics
Thermal resistance, junction -
case
R
thJC
°C/W
V
R
= 20 V, T
j
= 25 °C
I
F
= 25 A, T
j
= 25 °C
Reverse current
I
R
V
F
Electrical characteristics, at
Tj = 25 °C, unless ot
herwise specified
Surge non-repetitive forward
current, Half Sine W
ave
I
F,SM
A
mA
V
T
C
= 25 °C, t
p
= 8.3 ms
T
C
≤
100 °C
Conditions
17
14
1N5829 (R)
1N5830 (R)
1.8
1.8
V
R
= 20 V, T
j
= 125 °C
250
250
250
25
20
-55 to 150
-55 to 175
-55 to 175
-55 to 175
2
1N5831 (R)
0.58
22
1.8
25
25
25
800
800
800
25
35
0.58
0.58
-55 to 150
-55 to 150
www.genesicsemi.com
1
1N5829 thru 1N5831R
www.genesicsemi.com
2
P1-P2
1N5830R
Mfr. #:
Buy 1N5830R
Manufacturer:
GeneSiC Semiconductor
Description:
Schottky Diodes & Rectifiers 25V - 25A Schottky Rectifier
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
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Union
Products related to this Datasheet
1N5829
1N5831
1N5829R
1N5830R
1N5831R