AOTF10N50FD
Symbol Min Typ Max Units
500
600
BV
DSS
/∆TJ
0.56
V/
o
C
10
100
I
GSS
Gate-Body leakage current
±100
nΑ
V
GS(th)
Gate Threshold Voltage
2.5 3.1 4.2 V
R
DS(ON)
0.6 0.75 Ω
g
FS
10 S
V
SD
0.93 1.6 V
I
S
Maximum Body-Diode Continuous Current 10 A
I
SM
33 A
C
iss
820 1030 1240 pF
C
oss
75 112 150 pF
C
rss
5 10 15 pF
R
g
1.7 3.4 5.2 Ω
Q
g
20 26 35 nC
Q
gs
4.8 nC
Q
gd
9.5 nC
t
D(on)
24 ns
t
r
65 ns
t
D(off)
69 ns
t
f
50 ns
t
rr
116 190
ns
Q
rr
0.3 0.6
µC
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Body Diode Reverse Recovery Time
Static Drain-Source On-Resistance
V
GS
=10V, I
D
=5A
Reverse Transfer Capacitance
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
V
GS
=0V, V
DS
=25V, f=1MHz
SWITCHING PARAMETERS
I
S
=10A,V
GS
=0V
V
DS
=40V, I
D
=5A
Forward Transconductance
Breakdown Voltage Temperature
Coefficient
I
D
=10mA, V
GS
=0V
I
DSS
Electrical Characteristics (T
J
=25°C unless otherwise noted)
STATIC PARAMETERS
Parameter Conditions
BV
DSS
V
Drain-Source Breakdown Voltage
Turn-On DelayTime
DYNAMIC PARAMETERS
Turn-On Rise Time
Turn-Off DelayTime
V
GS
=10V, V
DS
=250V, I
D
=10A,
R
G
=25Ω
Gate resistance
V
GS
=0V, V
DS
=0V, f=1MHz
Turn-Off Fall Time
Total Gate Charge
V
GS
=10V, V
DS
=400V, I
D
=10A
I
D
=10mA, V
GS
=0V, T
J
=25°C
I
D
=10mA, V
GS
=0V, T
J
=150°C
µA
Body Diode Reverse Recovery Charge
I
F
=10A,dI/dt=100A/µs,V
DS
=100V
Maximum Body-Diode Pulsed Current
Input Capacitance
V
DS
=0V, V
GS
=±30V
Gate Source Charge
Gate Drain Charge
Diode Forward Voltage
Zero Gate Voltage Drain Current
V
DS
=500V, V
GS
=0V
Output Capacitance
V
DS
=5V,
I
D
=250µA
V
DS
=400V, T
J
=125°C
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=2.3A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
A. The value of R
θJA
is measured with the device in a still air environment with T
A
=25°C.
B. The power dissipation P
D
is based on T
J(MAX)
=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation
limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature T
J(MAX)
=150°C, Ratings are based on low frequency and duty cycles to keep initial T
J
=25°C.
D. The R
θJA
is the sum of the thermal impedance from junction to case R
θJC
and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of T
J(MAX)
=150°C. The SOA curve provides a single pulse rating.
G. L=60mH, I
AS
=3.8A, V
DD
=150V, R
G
=25Ω, Starting T
J
=25°C
Rev.1.0: July 2013 www.aosmd.com Page 2 of 6
