PMEG3005EB_PMEG3005EL_1 © NXP B.V. 2006. All rights reserved.
Product data sheet Rev. 01 — 29 November 2006 3 of 10
NXP Semiconductors
PMEG3005EB; PMEG3005EL
0.5 A very low V
F
MEGA Schottky barrier rectifiers
5. Limiting values
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
[1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse
power losses P
R
are a significant part of the total power losses.
[2] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
[3] Soldering point of cathode tab.
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
R
reverse voltage - 30 V
I
F
forward current T
sp
≤ 55 °C - 0.5 A
I
FRM
repetitive peak forward current t
p
≤ 1 ms;
δ≤0.25
-1A
I
FSM
non-repetitive peak forward
current
square wave;
t
p
=8ms
-3A
P
tot
total power dissipation T
amb
≤ 25 °C
[1]
PMEG3005EB - 310 mW
PMEG3005EL - 250 mW
T
j
junction temperature - 150 °C
T
amb
ambient temperature −65 +150 °C
T
stg
storage temperature −65 +150 °C
Table 7. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
R
th(j-a)
thermal resistance from
junction to ambient
in free air
[1][2]
PMEG3005EB - - 400 K/W
PMEG3005EL - - 500 K/W
R
th(j-sp)
thermal resistance from
junction to solder point
[3]
PMEG3005EB - - 75 K/W
