SI6981DQ-T1-E3

Vishay Siliconix
Si6981DQ
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
FEATURES
Halogen-free
TrenchFET
®
Power MOSFETs
APPLICATIONS
Load Switch
Battery Switch
PRODUCT SUMMARY
V
DS
(V) R
DS(on)
(Ω)I
D
(A)
- 20
0.031 at V
GS
= - 4.5 V
- 4.8
0.041 at V
GS
= - 2.5 V
- 4.2
0.058 at V
GS
= - 1.8 V
- 3.5
Ordering Information: Si6981DQ-T1-GE3 (Lead (Pb)-free and Halogen-free)
D
1
S
1
S
1
G
1
1
2
3
4
8
7
6
5
D
2
S
2
S
2
G
2
TSSOP-8
Top View
S
1
G
1
D
1
P-Channel MOSFET
S
2
G
2
D
2
P-Channel MOSFET
Notes:
a. Surface Mounted on 1" x 1" FR4 board.
ABSOLUTE MAXIMUM RATINGS T
A
= 25 °C, unless otherwise noted
Parameter Symbol 10 s Steady State Unit
Drain-Source Voltage
V
DS
- 20
V
Gate-Source Voltage
V
GS
± 8
Continuous Drain Current (T
J
= 150 °C)
a
T
A
= 25 °C
I
D
- 4.8 - 4.1
A
T
A
= 70 °C
- 3.9 - 3.2
Pulsed Drain Current (10 µs Pulse Width)
I
DM
- 30
Continuous Source Current (Diode Conduction)
a
I
S
- 1.0 - 0.7
Maximum Power Dissipation
a
T
A
= 25 °C
P
D
1.14 0.83
W
T
A
= 70 °C
0.73 0.53
Operating Junction and Storage Temperature Range
T
J
, T
stg
- 55 to 150 °C
THERMAL RESISTANCE RATINGS
Parameter Symbol Typical Maximum Unit
Maximum Junction-to-Ambient
a
t 10 s
R
thJA
86 110
°C/W
Steady State 124 150
Maximum Junction-to-Foot (Drain) Steady State
R
thJF
59 75
RoHS
COMPLIANT
www.vishay.com
2
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
Vishay Siliconix
Si6981DQ
Notes:
a. Pulse test; pulse width 300 µs, duty cycle 2 %.
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
SPECIFICATIONS T
J
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions Min. Typ. Max. Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= - 300 µA
- 0.40 - 0.9 V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 8 V
± 100 nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= - 16 V, V
GS
= 0 V
- 1
µA
V
DS
= - 16 V, V
GS
= 0 V, T
J
= 70 °C
- 25
On-State Drain Current
a
I
D(on)
V
DS
= - 5 V, V
GS
= - 4.5 V
- 20 A
Drain-Source On-State Resistance
a
R
DS(on)
V
GS
= - 4.5 V, I
D
= - 4.8 A
0.026 0.031
Ω
V
GS
= - 2.5 V, I
D
= - 4.2 A
0.034 0.041
V
GS
= - 1.8 V, I
D
= - 3.5 A
0.046 0.058
Forward Transconductance
a
g
fs
V
DS
= - 5 V, I
D
= - 4.8 A
17 S
Diode Forward Voltage
a
V
SD
I
S
= - 1.0 A, V
GS
= 0 V
- 0.65 - 1.1 V
Dynamic
b
Total Gate Charge
Q
g
V
DS
= - 10 V, V
GS
= - 4.5 V, I
D
= - 4.8 A
15 25
nCGate-Source Charge
Q
gs
2.4
Gate-Drain Charge
Q
gd
3.8
Tur n - O n D e l ay Time
t
d(on)
V
DD
= - 10 V, R
L
= 10 Ω
I
D
- 1 A, V
GEN
= - 4.5 V, R
G
= 6 Ω
35 55
ns
Rise Time
t
r
55 85
Turn-Off Delay Time
t
d(off)
120 180
Fall Time
t
f
52 80
Source-Drain Reverse Recovery Time
t
rr
I
F
= - 1.0 A, dI/dt = 100 A/µs
30 50
Output Characteristics
0
6
12
18
24
30
012345
V
GS
= 5 thru 2.5 V
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
2 V
1.5 V
Transfer Characteristics
0
6
12
18
24
30
0.0 0.5 1.0 1.5 2.0 2.5
T
C
= - 55 °C
125 °C
25 °C
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (A)I
D
Document Number: 72226
S-81221-Rev. B, 02-Jun-08
www.vishay.com
3
Vishay Siliconix
Si6981DQ
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
On-Resistance vs. Drain Current
Gate Charge
Source-Drain Diode Forward Voltage
- On-Resistance (Ω)R
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
0 6 12 18 24 30
I
D
- Drain Current (A)
V
GS
= 4.5 V
V
GS
= 2.5 V
V
GS
= 1.8 V
0
1
2
3
4
5
6
048121620
V
DS
= 10 V
I
D
= 4.8 A
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
T
J
= 25 °C
40
10
0.2
V
SD
- Source-to-Drain Voltage (V)
- Source Current (A)I
S
T
J
= 150 °C
1
Capacitance
On-Resistance vs. Junction Temperature
On-Resistance vs. Gate-to-Source Voltage
V
DS
- Drain-to-Source Voltage (V)
C
rss
C - Capacitance (pF)
0
500
1000
1500
2000
2500
048121620
C
oss
C
iss
0.6
0.8
1.0
1.2
1.4
1.6
- 50 - 25 0 25 50 75 100 125 150
V
GS
= 4.5 V
I
D
= 4.8 A
T
J
- Junction Temperature (°C)
(Normalized)
- On-ResistanceR
DS(on)
0.00
0.02
0.04
0.06
0.08
0.10
02468
I
D
= 4.8 A
- On-Resistance (Ω)R
DS(on)
V
GS
- Gate-to-Source Voltage (V)

SI6981DQ-T1-E3

Mfr. #:
Manufacturer:
Vishay
Description:
IGBT Transistors MOSFET DUAL P-CH 20V (D-S)
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet