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MJ21193G

P1-P3P4-P6
© Semiconductor Components Industries, LLC, 2013
September, 2013 − Rev. 6
1 Publication Order Number:
MJ21193/D
MJ21193-PNP
MJ21194-NPN
Silicon Power Transistors
The MJ21193 (PNP) and MJ21194 (NPN) utilize Perforated Emitter
technology and are specifically designed for high power audio output,
disk head positioners and linear applications.
Features
• Total Harmonic Distortion Characterized
• High DC Current Gain
• Excellent Gain Linearity
• High SOA
• These Devices are Pb−Free and are RoHS Compliant*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
250 Vdc
Collector−Base Voltage V
CBO
400 Vdc
Emitter−Base Voltage V
EBO
5 Vdc
Collector−Emitter Voltage − 1.5 V V
CEX
400 Vdc
Collector Current − Continuous I
C
16 Adc
Collector Current − Peak (Note 1) I
CM
30 Adc
Base Current − Continuous I
B
5 Adc
Total Power Dissipation @ T
C
= 25°C
Derate Above 25°C
P
D
250
1.43
W
W/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−   65 to +200
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle ≤ 10%. (continued)
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Case
R
q
JC
0.7 °C/W
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
http://onsemi.com
MARKING
DIAGRAM
TO−204AA (TO−3)
CASE 1−07
STYLE 1
16 AMP COMPLEMENTARY
SILICON POWER
TRANSISTORS
250 VOLTS, 250 WATTS
Device Package Shipping
†
ORDERING INFORMATION
MJ21193G TO−3
(Pb−Free)
100 Units / Tray
MJ21194G TO−3
(Pb−Free)
100 Units / Tray
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
MJ2119xG
AYYWW
MEX
MJ2119x = Device Code
x = 3 or 4
G=Pb−Free Package
A = Assembly Location
YY = Year
WW = Work Week
MEX = Country of Origin
SCHEMATIC
1
BASE
EMITTER 2
CASE 3
1
BASE
EMITTER 2
CASE 3
PNP
NPN
1
2
3
MJ21193 − PNP MJ21194 − NPN
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
C
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage
(I
C
= 100 mAdc, I
B
= 0)
V
CEO(sus)
250 − − Vdc
Collector Cutoff Current
(V
CE
= 200 Vdc, I
B
= 0)
I
CEO
− − 100
mAdc
Emitter Cutoff Current
(V
CE
= 5 Vdc, I
C
= 0)
I
EBO
− − 100
mAdc
Collector Cutoff Current
(V
CE
= 250 Vdc, V
BE(off)
= 1.5 Vdc)
I
CEX
− 100
mAdc
SECOND BREAKDOWN
Second Breakdown Collector Current with Base Forward Biased
(V
CE
= 50 Vdc, t = 1 s (non−repetitive)
(V
CE
= 80 Vdc, t = 1 s (non−repetitive)
I
S/b
5
2.5
−
−
−
−
Adc
ON CHARACTERISTICS
DC Current Gain
(I
C
= 8 Adc, V
CE
= 5 Vdc)
(I
C
= 16 Adc, I
B
= 5 Adc)
h
FE
25
8
−
−
75
Base−Emitter On Voltage
(I
C
= 8 Adc, V
CE
= 5 Vdc)
V
BE(on)
− − 2.2 Vdc
Collector−Emitter Saturation Voltage
(I
C
= 8 Adc, I
B
= 0.8 Adc)
(I
C
= 16 Adc, I
B
= 3.2 Adc)
V
CE(sat)
−
−
−
−
1.4
4
Vdc
DYNAMIC CHARACTERISTICS
Total Harmonic Distortion at the Output
V
RMS
= 28.3 V, f = 1 kHz, P
LOAD
= 100 W
RMS
h
FE
unmatched
(Matched pair h
FE
= 50 @ 5 A/5 V) h
FE
matched
T
HD
−
−
0.8
0.08
−
−
%
Current Gain Bandwidth Product
(I
C
= 1 Adc, V
CE
= 10 Vdc, f
test
= 1 MHz)
f
T
4 − − MHz
Output Capacitance
(V
CB
= 10 Vdc, I
E
= 0, f
test
= 1 MHz)
C
ob
− − 500 pF
NOTE: Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤2%
I
C
COLLECTOR CURRENT (AMPS)
Figure 1. Typical Current Gain
Bandwidth Product
Figure 2. Typical Current Gain
Bandwidth Product
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
PNP MJ21193
f, CURRENT GAIN BANDWIDTH PRODUCT (MHz)
T
NPN MJ21194
I
C
COLLECTOR CURRENT (AMPS)
0.1 1.0 10
6.5
6.0
5.5
5.0
4.5
4.0
3.5
3.0
8.0
7.0
6.0
4.0
3.0
5.0
1.0
0
2.0
0.1 1.0 10
V
CE
= 10 V
5 V
T
J
= 25°C
f
test
= 1 MHz
V
CE
= 5 V
10 V
T
J
= 25°C
f
test
= 1 MHz
MJ21193 − PNP MJ21194 − NPN
http://onsemi.com
3
Figure 3. DC Current Gain, V
CE
= 20 V Figure 4. DC Current Gain, V
CE
= 20 V
Figure 5. DC Current Gain, V
CE
= 5 V Figure 6. DC Current Gain, V
CE
= 5 V
h
FE
, DC CURRENT GAIN
I
C
COLLECTOR CURRENT (AMPS)
I
C
COLLECTOR CURRENT (AMPS)
h
FE
, DC CURRENT GAIN
h
FE
, DC CURRENT GAIN
I
C
COLLECTOR CURRENT (AMPS)
I
C
COLLECTOR CURRENT (AMPS)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 8. Typical Output Characteristics
I
C
, COLLECTOR CURRENT (A)
PNP MJ21193 NPN MJ21194
h
FE
, DC CURRENT GAIN
TYPICAL CHARACTERISTICS
PNP MJ21193
PNP MJ21193
NPN MJ21194
NPN MJ21194
1000
100
10
100101.00.1
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
1000
100
10
100101.00.1
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
1000
100
10
100101.00.1
1000
100
10
100101.00.1
T
J
= 100°C
25°C
-25°C
V
CE
= 5 V
T
J
= 100°C
25°C
-25°C
V
CE
= 20 V
30
25
20
15
10
5.0
0
5.0010152025
35
30
25
20
15
10
0
5.0010152025
5.0
1.5 A
1 A
0.5 A
I
B
= 2 A
T
J
= 25°C
I
B
= 2 A
1.5 A
1 A
0.5 A
T
J
= 25°C
P1-P3P4-P6

MJ21193G

Mfr. #:
Buy MJ21193G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 16A 250V 250W PNP
Lifecycle:
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