MPS6725RLRP Datasheet MPS6725RLRP, MPS6724, MPS6724RLRA | P1-P3

February, 2006 − Rev. 3

1 Publication Order Number:

MPS6724/D

MPS6724, MPS6725

One Watt Darlington

Transistors

NPN Silicon

Features

• Pb−Free Packages are Available*

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage

MPS6724

MPS6725

V

CEO

40

50

Vdc

Collector−Base Voltage

MPS6724

MPS6725

V

CBO

50

60

Vdc

Emitter−Base Voltage V

EBO

12 Vdc

Collector Current − Continuous I

C

1000 mAdc

Total Device Dissipation @ T

A

= 25°C

Derate above 25°C

P

D

1.0

8.0

W

mW/°C

Total Device Dissipation @ T

C

= 25°C

Derate above 25°C

P

D

2.5

20

W

mW/°C

Operating and Storage Junction

Temperature Range

T

J

, T

stg

−55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction−to−Ambient

R

q

JA

125 °C/W

Thermal Resistance, Junction−to−Case

R

q

JC

50 °C/W

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

*For additional information on our Pb−Free strategy and soldering details, please

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

TO−92 (TO−226)

CASE 29−10

STYLE 1

MARKING DIAGRAM

3

1

2

http://onsemi.com

MPS

672x

AYWWG

G

MPS672x = Device Code

x = 4 or 5

A = Assembly Location

Y = Year

WW = Work Week

G = Pb−Free Package

(Note: Microdot may be in either location)

COLLECTOR 3

BASE

2

EMITTER 1

See detailed ordering and shipping information in the package

dimensions section on page 4 of this data sheet.

ORDERING INFORMATION

MPS6724, MPS6725

http://onsemi.com

2

ELECTRICAL CHARACTERISTICS (T

A

= 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 1)

(I

C

= 1.0 mAdc, I

B

= 0) MPS6724

MPS6725

V

(BR)CES

40

50

−

Vdc

Collector−Base Breakdown Voltage

(I

C

= 1.0 mAdc, I

E

= 0) MPS6724

MPS6725

V

(BR)CBO

50

60

−

Vdc

Emitter−Base Breakdown Voltage

(I

E

= 10 mAdc, I

C

= 0)

V

(BR)EBO

12 − Vdc

Collector Cutoff Current

(V

CB

= 30 Vdc, I

E

= 0) MPS6724

(V

CB

= 40 Vdc, I

E

= 0) MPS6725

I

CBO

−

100

nAdc

Emitter Cutoff Current

(V

EB

= 10 Vdc, I

C

= 0)

I

EBO

− 100 nAdc

ON CHARACTERISTICS (Note 1)

DC Current Gain

(I

C

= 200 mAdc, V

CE

= 5.0 Vdc)

(I

C

= 1000 mAdc, V

CE

= 5.0 Vdc)

h

FE

25,000

4,000

−

40,000

−

Collector−Emitter Saturation Voltage

(I

C

= 1000 mAdc, I

B

= 2.0 mAdc)

V

CE(sat)

− 1.5 Vdc

Base−Emitter On Voltage

(I

C

= 1000 mAdc, V

CE

= 5.0 Vdc)

V

BE(on)

− 2.0 Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product

(I

C

= 200 mAdc, V

CE

= 5.0 Vdc, f = 100 MHz)

f

T

100 1000 MHz

Collector−Base Capacitance

(V

CB

= 10 Vdc, I

E

= 0, f = 1.0 MHz)

C

cb

− 10 pF

1. Pulse Test: Pulse Width v 300 ms; Duty Cycle v 2.0%.

TYPICAL CHARACTERISTICS

1.5

V

CE

, COLLECTOR−EMITTER VOLTAGE (VOLTS)

3.0 k

2.0 k

1.0 k

500

200

20

I

C

, COLLECTOR CURRENT (mA)

2.0 5.0 30

CURRENT LIMIT

THERMAL LIMIT

SECOND BREAKDOWN LIMIT

10

T

A

= 25°C T

C

= 25°C

1.0 ms

1.0 s

100 ms

Figure 1. Active Region — Safe Operating Area

DUTY CYCLE ≤ 10%

MPS6724, MPS6725

http://onsemi.com

3

5005.0

I

C

, COLLECTOR CURRENT (mA)

200 k

100 k

70 k

I

B

, BASE CURRENT (mA)

5.0 50

2.0

1.0

0.5

h

FE

, DC CURRENT GAIN

, COLLECTOR EMITTER VOLTAGE (VOLTS)

50 k

20 k

3010 20 100 200 10 200.5 1.0 2.0

1.5

2.5

3.0

0.1 0.2 100

V

CE

T

J

= 125°C

T

J

= 25°C

I

C

=

50 mA

I

C

=

10 mA

I

C

=

500 mA

I

C

=

250 mA

Figure 2. DC Current Gain Figure 3. Collector Saturation Region

7.0 7050 300

10 k

7.0 k

5.0 k

2.0 k

30 k

3.0 k

V

CE

= 5.0 V

−55°C

25°C

500200 1000

1.0 5.00.5

I

C

, COLLECTOR CURRENT (mA)

2.0

1.0

0.8

0.6

0.2

V

R

, REVERSE VOLTAGE (VOLTS)

0.04 10

20

7.0

5.0

2.0

, SMALL−SIGNAL CURRENT GAINh

FE

10 50020

4.0

0.1 401.0

3.0

C, CAPACITANCE (pF)

T

J

= 25°C

C

obo

C

ibo

V

CE

= 5.0 V

T

J

= 25°C

f = 100 MHz

100 500

I

C

, COLLECTOR CURRENT (mA)

0.6

1.6

1.4

1.2

1.0

0.8

I

C

, COLLECTOR CURRENT (mA)

−1.0

−2.0

−3.0

−4.0

−5.0

−6.0

200

V, VOLTAGE (VOLTS)

5.0 10 20 50

T

J

= 25°C

100 5005.0 2007.0 10 20 50

q

VB

FOR V

BE

q °

V

CE(sat)

@ I

C

/I

B

= 1000

V

BE(on)

@ V

CE

= 5.0 V

, TEMPERATURE COEFFICIENTS (mV/ C)

V

Figure 4. “ON” Voltages Figure 5. Temperature Coefficients

Figure 6. High Frequency Current Gain Figure 7. Capacitance

V

BE(sat)

@ I

C

/I

B

= 1000

7.0 30030 70 30030 70

*q

VC

FOR V

CE(sat)

25°C TO 125°C

−55°C TO 25°C

25°C TO 125°C

−55°C TO 25°C

*APPLIES FOR I

C

/I

B

≤ h

FE

/3.0

0.2 0.4 2.0 4.0 20

10

0.4

50 100 200

MPS6725RLRP

MPS6725RLRP

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