© Semiconductor Components Industries, LLC, 2006
February, 2006 − Rev. 3
1 Publication Order Number:
MPS6724/D
MPS6724, MPS6725
One Watt Darlington
Transistors
NPN Silicon
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage
MPS6724
MPS6725
V
CEO
40
50
Vdc
Collector−Base Voltage
MPS6724
MPS6725
V
CBO
50
60
Vdc
Emitter−Base Voltage V
EBO
12 Vdc
Collector Current − Continuous I
C
1000 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
1.0
8.0
W
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
2.5
20
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
R
q
JA
125 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
50 °C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
TO−92 (TO−226)
CASE 29−10
STYLE 1
MARKING DIAGRAM
3
1
2
http://onsemi.com
MPS
672x
AYWWG
G
MPS672x = Device Code
x = 4 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
COLLECTOR 3
BASE
2
EMITTER 1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
ORDERING INFORMATION