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STTH30L06CW

P1-P3P4-P6P7-P9P10-P12
Characteristics
STTH30L06C
4/12
DocID10761 Rev 2
1.1 Characteristics (curves)
Figure 1: Conduction losses versus average
forward current (per diode)
Figure 2: Forward voltage drop versus forward
current (per diode)
Figure 3: Relative variation of thermal impedance
junction to case versus pulse duration
Figure 4: Peak reverse recovery current versus
dl
F
/dt (typical values, per diode)
Figure 5: Reverse recovery time versus dl
F
/dt
(typical values, per diode)
Figure 6: Reverse recovery charges versus dl
F
/dt
(typical values, per diode)
0
2
4
6
8
10
12
14
16
18
20
22
24
860 42 10 12 14 16 18 20
P(W)
T
δ
=tp/T
tp
δ = 1
I
F(AV)
(A)
δ = 0.05
δ = 0.1
δ = 0.2
δ = 0.5
0.0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1.0
1.E-03 1.E-02 1.E-01 1.E+00
th(j-c)
Z /
t
R
h(j-c)
t
p
(s)
Single pulse
T
δ
=tp/T
tp
0
5
10
15
20
25
30
35
0 50 100 150 200 250 300 350 400 450 500
I
RM
(A)
dI
F
/dt(A/µs)
I =2 x I
F F(AV)
I =
F F
I
(AV)
V =400V
I =0.5 x I
F F(AV)
T =125°C
R
j
0
100
200
300
400
500
600
700
800
0 50 100 150 200 250 300 350 400 450 500
t
rr
(ns)
dI
F
/dt(A/µs)
I =
F F
I
(AV)
I
F
=0.5 x I
F(AV)
V =400V
T =125°C
R
j
I =2 x I
F F(AV)
0
200
400
600
800
1000
1200
1400
1600
1800
0 100 200 300 400 500
Q
rr
(nC)
I =2 x I
F F(AV)
I =
F F
I
(AV)
V =400V
I =0.5 x I
F F(AV)
T =125°C
R
j
dI
F
/dt(A/µs)
STTH30L06C
Characteristics
DocID10761 Rev 2
5/12
Figure 7: Reverse recovery softness factor versus
dl
F
/dt (typical values, per diode)
Figure 8: Relative variation of dynamic parameters
versus junction temperature
Figure 9: Transient peak forward voltage versus
dl
F
/dt (typical values, per diode)
Figure 10: Forward recovery time versus dl
F
/dt
(typical values, per diode)
Figure 11: Junction capacitance versus reverse
voltage applied (typical values, per diode)
Figure 12: Thermal resistance, junction to ambient,
versus copper surface under tab (D²PAK)
0
200
400
600
800
1000
1200
1400
1600
1800
0 100 200 300 400 500
Q
rr
(nC)
I =2 x I
F F(AV)
I =
F F
I
(AV)
V =400V
I =0.5 x I
F F(AV)
T =125°C
R
j
dI
F
/dt(A/µs)
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
0 10050 150 200 250 300 350 400 450 500
S factor
dI
F
/dt(A/µs)
T =125°C
F
I < 2 x I
j
F(AV)
V
R
=400V
0
1
2
3
4
5
6
7
8
9
10
11
12
0 50 100 150 200 250 300 350 400 450 500
V
FP
(V)
dI
F
/dt(A/µs)
I =I
T =125°C
j
F F(AV)
0
20
40
60
80
100
120
140
160
180
200
220
240
260
0 100 200 300 400 500
t
fr
(ns)
dI
F
/dt(A/µs)
I =I
T =125°C
j
F F(AV)
V
FR
=1.1 x V
F
max.
10
100
1000
1 10010 1000
C(pF)
V
R
(V)
F=1MHz
V =30mV
OSC
T =25°C
RMS
j
0
10
20
30
40
50
60
70
80
0 5 10 15 20 25 30 35 40
S
Cu
(cm²)
R
th(j-a)
(°C/W)
Epoxy printed board FR4, e
CU
= 35 µm
Package information
STTH30L06C
6/12
DocID10761 Rev 2
2 Package information
In order to meet environmental requirements, ST offers these devices in different grades of
ECOPACK
®
packages, depending on their level of environmental compliance. ECOPACK
®
specifications, grade definitions and product status are available at: www.st.com.
ECOPACK
®
is an ST trademark.
Cooling method: by conduction (C)
Epoxy meets UL 94,V0
Recommended torque value: 0.8 N·m
Maximum torque value: 1.0 N·m
P1-P3P4-P6P7-P9P10-P12

STTH30L06CW

Mfr. #:
Buy STTH30L06CW
Manufacturer:
STMicroelectronics
Description:
Rectifiers RECTIFIER
Lifecycle:
New from this manufacturer.
Delivery:
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