74HC_HCT4051_Q100 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 2 — 8 October 2012 22 of 31
NXP Semiconductors
74HC4051-Q100; 74HCT4051-Q100
8-channel analog multiplexer/demultiplexer
11.1 Additional dynamic characteristics
[1] Adjust input voltage V
is
to 0 dBm level (0 dBm = 1 mW into 600 ).
[2] Adjust input voltage V
is
to 0 dBm level at V
os
for 1 MHz (0 dBm = 1 mW into 50 ).
Table 12. Additional dynamic characteristics
Recommended conditions and typical values; GND = 0 V; T
amb
=25
C; C
L
=50pF.
V
is
is the input voltage at pins nYn or nZ, whichever is assigned as an input.
V
os
is the output voltage at pins nYn or nZ, whichever is assigned as an output.
Symbol Parameter Conditions Min Typ Max Unit
d
sin
sine-wave distortion f
i
= 1 kHz; R
L
=10k; see Figure 16
V
is
= 4.0 V (p-p); V
CC
= 2.25 V; V
EE
= 2.25 V - 0.04 - %
V
is
= 8.0 V (p-p); V
CC
= 4.5 V; V
EE
= 4.5 V - 0.02 - %
f
i
=10kHz; R
L
=10k; see Figure 16
V
is
= 4.0 V (p-p); V
CC
= 2.25 V; V
EE
= 2.25 V - 0.12 - %
V
is
= 8.0 V (p-p); V
CC
= 4.5 V; V
EE
= 4.5 V - 0.06 - %
iso
isolation (OFF-state) R
L
= 600 ; f
i
= 1 MHz; see Figure 17
V
CC
= 2.25 V; V
EE
= 2.25 V
[1]
- 50 - dB
V
CC
= 4.5 V; V
EE
= 4.5 V
[1]
- 50 - dB
V
ct
crosstalk voltage peak-to-peak value; between control and any
switch; R
L
=600; f
i
= 1 MHz; E or Sn square
wave between V
CC
and GND; t
r
=t
f
=6ns;
see Figure 18
V
CC
= 4.5 V; V
EE
=0 V - 110 - mV
V
CC
= 4.5 V; V
EE
= 4.5 V - 220 - mV
f
(3dB)
3 dB frequency response R
L
=50; see Figure 19
V
CC
= 2.25 V; V
EE
= 2.25 V
[2]
-170- MHz
V
CC
= 4.5 V; V
EE
= 4.5 V
[2]
-180- MHz
Fig 16. Test circuit for measuring sine-wave distortion
dB
001aan385
Yn/Z
10 μF
V
is
V
os
Z/Yn
C
L
R
L
Sn
GNDV
EE
V
CC
