IXGA16N60C2 Datasheet IXGP16N60C2, IXGA16N60C2 | P1-P3

Symbol Test Conditions Maximum Ratings

V

CES

T

J

= 25°C to 150°C 600 V

V

CGR

T

J

= 25°C to 150°C, R

GE

= 1MΩ 600 V

V

GES

Continuous ±20 V

V

GEM

Transient ±30 V

I

C25

T

C

= 25°C40 A

I

C110

T

C

= 110°C16 A

I

CM

T

C

= 25°C, 1ms 100 A

SSOA V

GE

= 15V, T

J

= 125°C, R

G

= 22Ω I

CM

= 32 A

(RBSOA) Clamped Inductive load V

CE

≤ ≤

≤ V

CES

P

C

T

C

= 25°C 150 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

M

d

Mounting Torque (TO-220) 1.13/10 Nm/lb.in.

F

C

Mounting Force (TO-263) 10..65 / 2.2..14.6 N/lb.

T

L

Maximum Lead Temperature for Soldering 300 °C

T

SOLD

1.6mm (0.062 in.) from Case for 10s 260 °C

Weight TO-263 2.5 g

TO-220 3.0 g

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

BV

CES

I

C

= 250μA, V

GE

= 0V 600 V

V

GE(th)

I

C

= 250μA, V

CE

= V

GE

3.0 5.5 V

I

CES

V

CE

= V

CES

,V

GE

= 0V 15 μA

T

J

= 125°C 250 μA

I

GES

V

CE

= 0V, V

GE

= ±20V ±100 nA

V

CE(sat)

I

C

= 12A,

V

GE

= 15V, Note1 3.0 V

T

J

= 125°C 1.8 V

DS99142C(08/10)

HiPerFAST

TM

IGBTs

C2-Class

High Speed

V

CES

= 600V

I

C110

= 16A

V

CE(sat)

≤≤

≤ 3.0V

t

fi(typ)

= 33ns

IXGA16N60C2

IXGP16N60C2

G = Gate C = Collector

E = Emitter Tab = Collector

TO-263 AA (IXGA)

G

C

E

TO-220AB (IXGP)

G

E

C (Tab)

Features

z

Optimized for Low Switching Losses

z

Square RBSOA

z

International Standard Packages

Advantages

z

High Power Density

z

Low Gate Drive Requirement

Applications

z

Power Inverters

z

UPS

z

Motor Drives

z

SMPS

z

PFC Circuits

z

Battery Chargers

z

Welding Machines

z

Lamp Ballasts

IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.

IXGA16N60C2

IXGP16N60C2

IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2

by one or more of the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537

Pins: 1 - Gate 2 - Collector

3 - Emitter

TO-220 (IXGP) Outline

Notes:

1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.

2. Switching times & energy losses may increase for higher V

CE

(Clamp), T

J

or R

G

.

Dim. Millimeter Inches

Min. Max. Min. Max.

A 4.06 4.83 .160 .190

b 0.51 0.99 .020 .039

b2 1.14 1.40 .045 .055

c 0.40 0.74 .016 .029

c2 1.14 1.40 .045 .055

D 8.64 9.65 .340 .380

D1 8.00 8.89 .280 .320

E 9.65 10.41 .380 .405

E1 6.22 8.13 .270 .320

e 2.54 BSC .100 BSC

L 14.61 15.88 .575 .625

L1 2.29 2.79 .090 .110

L2 1.02 1.40 .040 .055

L3 1.27 1.78 .050 .070

L4 0 0.13 0 .005

TO-263 (IXGA) Outline

1. Gate

2. Collector

3. Emitter

4. Collector

Bottom Side

Symbol Test Conditions Characteristic Values

(T

J

= 25°C, Unless Otherwise Specified) Min. Typ. Max.

g

fs

I

C

= 12A, V

CE

= 10V, Note 1 8 S

C

ies

657 pF

C

oes

V

CE

= 25V, V

GE

= 0V, f = 1MHz 62 pF

C

res

22 pF

Q

g(on)

25 nC

Q

ge

I

C

= 12A, V

GE

= 15V, V

CE

= 0.5 • V

CES

5 nC

Q

gc

13 nC

t

d(on)

16 ns

t

ri

17 ns

E

on

0.16 mJ

t

d(off)

75 ns

t

fi

33 ns

E

off

0.09 0.16 mJ

t

d(on)

16 ns

t

ri

18 ns

E

on

0.27 mJ

t

d(off)

115 ns

t

fi

100 ns

E

off

0.27 mJ

R

thJC

0.83 °C/W

R

thCK

TO-220 0.50 °C/W

Inductive load, T

J

= 125°C

I

C

= 12A, V

GE

= 15V

V

CE

= 400V, R

G

= 22Ω

Note 2

Inductive load, T

J

= 25°C

I

C

= 12A, V

GE

= 15V

V

CE

= 400V, R

G

= 22Ω

Note 2

IXGA16N60C2

IXGP16N60C2

Fig. 1. Output Characteristics @ T

J

= 25ºC

0

4

8

12

16

20

24

0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

12

V

9V

6V

8V

10V

7V

11V

Fig. 2. Extended Output Characteristics @ T

J

= 25ºC

0

10

20

30

40

50

60

70

80

90

100

110

0 5 10 15 20 25 30

V

CE

- Volts

I

C

- Amperes

V

GE

= 15V

8V

7V

9V

11V

13V

12V

14V

10V

Fig. 3. Output Characteristics @ T

J

= 125ºC

0

4

8

12

16

20

24

0 0.5 1 1.5 2 2.5 3 3.5

V

CE

- Volts

I

C

- Amperes

V

GE

= 15

V

13

V

12

V

11

V

9V

6V

8V

7V

10V

Fig. 4. Dependence of V

CE(sat)

on

Junction Temperature

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

1.4

0255075100125150

T

J

- Degrees Centigrade

V

CE(sat)

- Normalized

V

GE

= 15V

I

C

= 12A

I

C

= 6A

I

C

= 24A

Fig. 5. Collector-to-Emitter Voltage vs.

Gate-to-Emitter Voltage

1.5

2.0

2.5

3.0

3.5

4.0

4.5

5.0

5.5

6.0

7 8 9 101112131415

V

GE

- Volts

V

CE

- Volts

I

C

= 24

A

T

J

= 25ºC

12

A

6

A

Fig. 6. Input Admittance

0

5

10

15

20

25

30

35

4567891011

V

GE

- Volts

I

C

- Amperes

T

J

= - 40ºC

25ºC

125ºC

IXGA16N60C2

IXGA16N60C2

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