P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
*R
DS(on)
=25Ω
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-200 V
Continuous Drain Current at T
amb
=25°C I
D
-120 mA
Pulsed Drain Current I
DM
-1.2 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-200 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
µA
µA
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source
On-State Resistance (1)
R
DS(on)
25
Ω
V
GS
=-10V,I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V,I
D
=-150mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
7pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
≈-25V, I
D
=-150mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(
3
E-Line
TO92 Compatible
3-425
D
G
S
G
D
S
ZVP2120A
P-CHANNEL ENHANCEMENT
MODE VERTICAL DMOS FET
ISSUE 2 MARCH 94
FEATURES
* 200 Volt V
DS
*R
DS(on)
=25Ω
REFER TO ZVP2120A FOR GRAPHS
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL VALUE UNIT
Drain-Source Voltage V
DS
-200 V
Continuous Drain Current at T
amb
=25°C I
D
-120 mA
Pulsed Drain Current I
DM
-1.2 A
Gate Source Voltage V
GS
± 20
V
Power Dissipation at T
amb
=25°C P
tot
700 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL MIN. MAX. UNIT CONDITIONS.
Drain-Source Breakdown
Voltage
BV
DSS
-200 V I
D
=-1mA, V
GS
=0V
Gate-Source Threshold
Voltage
V
GS(th)
-1.5 -3.5 V ID=-1mA, V
DS
= V
GS
Gate-Body Leakage I
GSS
20 nA
V
GS
=± 20V, V
DS
=0V
Zero Gate Voltage Drain
Current
I
DSS
-10
-100
µA
µA
V
DS
=-200 V, V
GS
=0
V
DS
=-160 V, V
GS
=0V,
T=125°C
(2)
On-State Drain Current(1) I
D(on)
-300 mA V
DS
=-25 V, V
GS
=-10V
Static Drain-Source On-State
Resistance (1)
R
DS(on)
25
Ω
V
GS
=-10V,I
D
=-150mA
Forward Transconductance
(1)(2)
g
fs
50 mS V
DS
=-25V,I
D
=-150mA
Input Capacitance (2) C
iss
100 pF
Common Source Output
Capacitance (2)
C
oss
25 pF V
DS
=-25V, V
GS
=0V, f=1MHz
Reverse Transfer
Capacitance (2)
C
rss
7pF
Turn-On Delay Time (2)(3) t
d(on)
7ns
V
DD
≈-25V, I
D
=-150mA
Rise Time (2)(3) t
r
15 ns
Turn-Off Delay Time (2)(3) t
d(off)
12 ns
Fall Time (2)(3) t
f
15 ns
(1) Measured under pulsed conditions. Width=300
µs. Duty cycle ≤2%
(2) Sample test.
(
3) Switching times measured with 50
Ω source impedance and <5ns rise time on a pulse generator
E-Line
TO92 Compatible
ZVP2120C
3-428
