IXTA10P50P IXTQ10P50P
IXTP10P50P IXTH10P50P
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
g
fs
V
DS
= -10V, I
D
= 0.5 • I
D25
, Note 1 6.5 11 S
C
iss
2840 pF
C
oss
V
GS
= 0V, V
DS
= - 25V, f = 1MHz 275 pF
C
rss
42 pF
t
d(on)
20 ns
t
r
28 ns
t
d(off)
52 ns
t
f
44 ns
Q
g(on)
50 nC
Q
gs
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
17 nC
Q
gd
18 nC
R
thJC
0.42C/W
R
thCS
(TO-3P & TO-247) 0.25 C/W
(TO-220) 0.50 C/W
Source-Drain Diode
Symbol Test Conditions Characteristic Values
(T
J
= 25C, Unless Otherwise Specified) Min. Typ. Max.
I
S
V
GS
= 0V - 10 A
I
SM
Repetitive, Pulse Width Limited by T
JM
- 40 A
V
SD
I
F
= - 5A, V
GS
= 0V, Note 1 - 3 V
t
rr
414 ns
Q
RM
5.90 C
I
RM
- 28.6
A
IXYS MOSFETs and IGBTs are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585 7,005,734 B2 7,157,338B2
by one or more of the following U.S. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405 B2 6,759,692 7,063,975 B2
4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2 7,071,537
Note 1: Pulse test, t 300s, duty cycle, d 2%.
Resistive Switching Times
V
GS
= -10V, V
DS
= 0.5 • V
DSS
, I
D
= 0.5 • I
D25
R
G
= 3.3 (External)
I
F
= - 5A, -di/dt = -100A/s
V
R
= -100V, V
GS
= 0V
