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74ABT823PW,112

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17
74ABT823 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 November 2011 4 of 17
NXP Semiconductors
74ABT823
9-bit D-type flip-flop with reset and enable; 3-state
5. Pinning information
5.1 Pinning
5.2 Pin description
Fig 4. Pin configuration
74ABT823
OE V
CC
D0 Q0
D1 Q1
D2 Q2
D3 Q3
D4 Q4
D5 Q5
D6 Q6
D7 Q7
D8 Q8
MR CE
GND CP
001aal300
1
2
3
4
5
6
7
8
9
10
11
12
14
13
16
15
18
17
20
19
22
21
24
23
Table 2. Pin description
Symbol Pin Description
OE
1 output enable input (active LOW)
D0, D1, D2, D3, D4, D5, D6, D7, D8 2, 3, 4, 5, 6, 7, 8, 9, 10 data input
MR
11 master reset input (active LOW)
GND 12 ground (0 V)
CP 13 clock pulse input (active rising edge)
CE
14 clock enable input (active LOW)
Q8, Q7, Q6, Q5, Q4, Q3, Q3, Q2, Q1, Q0 15, 16, 17, 18, 19, 20, 21, 22, 23 data output
V
CC
24 positive supply voltage
74ABT823 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 November 2011 5 of 17
NXP Semiconductors
74ABT823
9-bit D-type flip-flop with reset and enable; 3-state
6. Functional description
6.1 Function table
[1] H = HIGH voltage level;
L = LOW voltage level;
h = HIGH voltage level one set-up time prior to the LOW-to-HIGH clock transition;
I = LOW voltage level one set-up time prior to the LOW-to-HIGH clock transition;
= LOW-to-HIGH clock transition;
NC = no change;
X = don’t care;
Z = high-impedance OFF-state.
7. Limiting values
[1] The input and output voltage ratings may be exceeded if the input and output current ratings are observed.
[2] The performance capability of a high-performance integrated circuit in conjunction with its thermal environment can create junction
temperatures which are detrimental to reliability. The maximum junction temperature of this integrated circuit should not exceed 150 C.
Table 3. Function table
[1]
Input Output Operating mode
OE MR CE CP Dn Qn
LLXXXLclear
LHL h H load and read data
LHL lL
LHHNCXNChold
HXXXXZhigh-impedance
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
CC
supply voltage 0.5 +7.0 V
V
I
input voltage
[1]
1.2 +7.0 V
V
O
output voltage output in OFF-state or HIGH-state
[1]
0.5 +5.5 V
I
IK
input clamping current V
I
< 0 V 18 - mA
I
OK
output clamping current V
O
< 0 V 50 - mA
I
O
output current output in LOW-state - 128 mA
T
j
junction temperature
[2]
- 150 C
T
stg
storage temperature 65 +150 C
74ABT823 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 7 November 2011 6 of 17
NXP Semiconductors
74ABT823
9-bit D-type flip-flop with reset and enable; 3-state
8. Recommended operating conditions
9. Static characteristics
Table 5. Operating conditions
Voltages are referenced to GND (ground = 0 V).
Symbol Parameter Conditions Min Typ Max Unit
V
CC
supply voltage 4.5 - 5.5 V
V
I
input voltage 0 - V
CC
V
V
IH
HIGH-level input voltage 2.0 - - V
V
IL
LOW-level Input voltage - - 0.8 V
I
OH
HIGH-level output current 32--mA
I
OL
LOW-level output current - - 64 mA
t/V input transition rise and fall rate 0 - 5 ns/V
T
amb
ambient temperature in free air 40 - +85 C
Table 6. Static characteristics
Symbol Parameter Conditions 25 C 40 C to +85 C Unit
Min Typ Max Min Max
V
IK
input clamping voltage V
CC
= 4.5 V; I
IK
= 18 mA 1.2 0.9 - 1.2 - V
V
OH
HIGH-level output
voltage
V
I
= V
IL
or V
IH
V
CC
= 4.5 V; I
OH
= 3 mA 2.5 2.9 - 2.5 - V
V
CC
= 5.0 V; I
OH
= 3 mA 3.0 3.4 - 3.0 - V
V
CC
= 4.5 V; I
OH
= 32 mA 2.0 2.4 - 2.0 - V
V
OL
LOW-level output
voltage
V
CC
= 4.5 V; I
OL
=64mA;
V
I
=V
IL
or V
IH
- 0.42 0.55 - 0.55 V
V
OL(pu)
power-up LOW-level
output voltage
V
CC
= 5.5 V; I
O
=1mA;
V
I
=GNDor V
CC
[1]
- 0.13 0.55 - 0.55 V
I
I
input leakage current V
CC
=5.5V; V
I
=V
CC
or GND - 0.01 1.0 - 1.0 A
I
OFF
power-off leakage
current
V
CC
= 0 V; V
I
or V
O
4.5 V - 5.0 100 - 100 A
I
O(pu/pd)
power-up/power-down
output current
V
CC
=2.0V; V
O
=0.5V;
V
I
=GNDor V
CC
; OE HIGH
[2]
- 5.0 50 - 50 A
I
OZ
OFF-state output
current
V
CC
= 5.5 V; V
I
= V
IL
or V
IH
V
O
= 2.7 V - 5.0 50 - 50 A
V
O
= 0.5 V - 5.0 50 - 50 A
I
LO
output leakage current HIGH-state; V
O
=5.5V;
V
CC
=5.5V; V
I
=GNDor V
CC
-5.050 - 50A
I
O
output current V
CC
= 5.5 V; V
O
= 2.5 V
[3]
180 50 50 180 50 mA
I
CC
supply current V
CC
= 5.5 V; V
I
= GND or V
CC
outputs HIGH-state - 0.5 250 - 250 A
outputs LOW-state - 27 34 - 34 mA
outputs disabled - 0.5 250 - 250 A
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P17

74ABT823PW,112

Mfr. #:
Buy 74ABT823PW,112
Manufacturer:
NXP Semiconductors
Description:
IC FF D-TYPE SNGL 9BIT 24TSSOP
Lifecycle:
New from this manufacturer.
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