IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 6,306,728B1
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
IXGA 7N60CD1
IXGP 7N60CD1
Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
I
C
= I
C90
; V
CE
= 10 V, 3 7 S
Pulse test, t ≤ 300 µs, duty cycle ≤ 2 %
C
ies
500 pF
C
oes
V
CE
= 25 V, V
GE
= 0 V, f = 1 MHz 50 pF
C
res
17 pF
Q
g
25 nC
Q
ge
I
C
= I
C90
, V
GE
= 15 V, V
CE
= 0.5 V
CES
15 nC
Q
gc
10 nC
t
d(on)
10 ns
t
ri
10 ns
t
d(off)
65 130 ns
t
fi
45 110 ns
E
off
0.12 0.25 mJ
t
d(on)
10 ns
t
ri
15 ns
E
on
0.15 mJ
t
d(off)
120 ns
t
fi
85 ns
E
off
0.22 mJ
R
thJC
IGBT 1.65 K/W
R
thCK
0.25 K/W
Inductive load, T
J
= 25
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 • V
CES
, R
G
= R
off
= 18 Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
Inductive load, T
J
= 125
°°
°°
°C
I
C
= I
C90
, V
GE
= 15 V, L = 300 µH
V
CE
= 0.8 • V
CES
, R
G
= R
off
= 18 Ω
Remarks: Switching times may increase
for V
CE
(Clamp) > 0.8 • V
CES
, higher T
J
or
increased R
G
TO-220 AB Outline
Dim. Millimeter Inches
Min. Max. Min. Max.
A 12.70 13.97 0.500 0.550
B 14.73 16.00 0.580 0.630
C 9.91 10.66 0.390 0.420
D 3.54 4.08 0.139 0.161
E 5.85 6.85 0.230 0.270
F 2.54 3.18 0.100 0.125
G 1.15 1.65 0.045 0.065
H 2.79 5.84 0.110 0.230
J 0.64 1.01 0.025 0.040
K 2.54 BSC 0.100 BSC
M 4.32 4.82 0.170 0.190
N 1.14 1.39 0.045 0.055
Q 0.35 0.56 0.014 0.022
R 2.29 2.79 0.090 0.110
1. Gate
2. Collector
3. Emitter
4. Collector
Botton Side
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.06 4.83 .160 .190
A1 2.03 2.79 .080 .110
b 0.51 0.99 .020 .039
b2 1.14 1.40 .045 .055
c 0.46 0.74 .018 .029
c2 1.14 1.40 .045 .055
D 8.64 9.65 .340 .380
D1 7.11 8.13 .280 .320
E 9.65 10.29 .380 .405
E1 6.86 8.13 .270 .320
e 2.54 BSC .100 BSC
L 14.61 15.88 .575 .625
L1 2.29 2.79 .090 .110
L2 1.02 1.40 .040 .055
L3 1.27 1.78 .050 .070
L4 0 0.38 0 .015
R 0.46 0.74 .018 .029
TO-263 AA Outline
Pins: 1 - Gate
2 - Collector 3 - Emitter
4 - Collector Bottom Side
Reverse Diode (FRED) Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
V
F
I
F
= 10A; T
VJ
= 150°C 1.96 V
T
VJ
= 25°C 2.95 V
I
RM
V
R
= 100 V; I
F
=25A; -di
F
/dt = 100 A/µs 2 2.5 V
L < 0.05 µH; T
VJ
= 100°C
t
rr
I
F
= 1 A; -di/dt = 50 A/µs;
V
R
= 30 V T
J
= 25°C35ns
R
thJC
Diode 1.6 K/W
Min. Recommended Footprint
(Dimensions in inches and mm)
