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BSS84PH6327XTSA2

P1-P3P4-P6P7-P8
2011-07-11
Rev 2.7 Page 4
BSS84P
1 Power dissipation
P
tot
= f (T
A
)
0 20 40 60 80 100 120
°C
160
T
A
0
0.04
0.08
0.12
0.16
0.2
0.24
0.28
0.32
W
0.38
BSS 84 P
P
tot
2 Drain current
I
D
= f (T
A
)
parameter: V
GS
10 V
0 20 40 60 80 100 120
°C
160
T
A
0
-0.02
-0.04
-0.06
-0.08
-0.1
-0.12
-0.14
A
-0.18
BSS 84 P
I
D
3 Safe operating area
I
D
= f ( V
DS
)
parameter : D = 0 , T
A
= 25 °C
-10
-1
-10
0
-10
1
-10
2
V
V
DS
-3
-10
-2
-10
-1
-10
0
-10
1
-10
A
BSS 84 P
I
D
R
D
S
(
o
n
)
=
V
D
S
/
I
D
DC
10 ms
1 ms
t
p
= 170.0µs
4 Transient thermal impedance
Z
thJA
= f (t
p
)
parameter : D = t
p
/T
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
10
2
10
4
s
t
p
-1
10
0
10
1
10
2
10
3
10
K/W
BSS 84 P
Z
thJA
single pulse
0.01
0.02
0.05
0.10
0.20
D = 0.50
2011-07-11
Rev 2.7 Page 5
BSS84P
5 Typ. output characteristic
I
D
= f (V
DS
)
parameter: T
j
= 25 °C
0 -0.5 -1 -1.5 -2 -2.5 -3 -3.5 -4
V
-5
V
DS
0
-0.04
-0.08
-0.12
-0.16
-0.2
-0.24
-0.28
-0.32
A
-0.4
BSS 84 P
I
D
V
GS
[V]
a
a -2.5
b
b -3.0
c
c -3.5
d
d -4.0
e
e -4.5
f
f -5.0
g
g -5.5
h
h -6.0
i
i -6.5
j
j -7.0
k
k -8.0
l
P
tot
= 0.36W
l -10.0
6 Typ. drain-source on resistance
R
DS(on)
= f (I
D
)
parameter: V
GS
; T
j
= 25 °C
0 -0.04 -0.08-0.12-0.16 -0.2 -0.24 -0.28-0.32
A
-0.38
I
D
0
2
4
6
8
10
12
14
16
18
20
22
26
BSS 84 P
R
DS(on)
V
GS
[V] =
a
a
-2.5
b
b
-3.0
c
c
-3.5
d
d
-4.0
e
e
-4.5
f
f
-5.0
g
g
-5.5
h
h
-6.0
i
i
-6.5
j
j
-7.0
k
k
-8.0
l
l
-10.0
7 Typ. transfer characteristics
I
D
= f ( V
GS
); |V
DS
|
2 x |I
D
|
x R
DS(on)max
parameter: T
j
= 25 °C
0 1 2 3 4
V
6
- V
GS
0
0.05
0.1
0.15
0.2
0.25
0.3
A
0.4
- I
D
8 Typ. forward transconductance
g
fs
= f(I
D
)
parameter: T
j
= 25 °C
0 0.04 0.08 0.12 0.16
A
0.22
-I
D
0
0.02
0.04
0.06
0.08
0.1
0.12
S
0.16
g
fs
2011-07-11
Rev 2.7 Page 6
BSS84P
9 Drain-source on-state resistance
R
DS(on)
= f (T
j
)
parameter : I
D
= -0.17 A, V
GS
= -10 V
-60 -20 20 60 100
°C
180
T
A
0
2
4
6
8
10
12
14
16
18
21
BSS 84 P
R
DS(on)
typ
98%
10 Typ. gate threshold voltage
V
GS(th)
= f (T
j
)
parameter: V
GS
= V
DS
-60 -20 20 60 100
°C
160
T
A
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
V
2.4
- V
GS(th)
2%
typ.
98%
11 Typ. capacitances
C = f (V
DS
)
parameter: V
GS
=0, f=1 MHz
0 5 10
V
20
- V
DS
0
10
1
10
2
10
pF
C
Crss
Coss
Ciss
12 Forward character. of reverse diode
I
F
= f (V
SD
)
parameter: T
j
, tp = 80 µs
0 -0.4 -0.8 -1.2 -1.6 -2 -2.4
V
-3
V
SD
-3
-10
-2
-10
-1
-10
0
-10
A
BSS 84 P
I
F
T
j
= 25 °C typ
T
j
= 25 °C (98%)
T
j
= 150 °C typ
T
j
= 150 °C (98%)
P1-P3P4-P6P7-P8

BSS84PH6327XTSA2

Mfr. #:
Buy BSS84PH6327XTSA2
Manufacturer:
Infineon Technologies
Description:
MOSFET P-Ch -60V -170mA SOT-23-3
Lifecycle:
New from this manufacturer.
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