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6-292250-7

P1-P3P4-P6P7-P9P10-P11
2007-04-20
1
BF2030...
Silicon N-Channel MOSFET Tetrode
• For low noise, high gain controlled
input stages up to 1GHz
• Operating voltage 5V
• Pb-free (RoHS compliant) package
1)
• Qualified according AEC Q101
G2
G1
GND
AGC
RF
Input
Drain
RF Output
+ DC
VGG
RG1
ESD (Electrostatic discharge) sensitive device, observe handling precaution!
Class 2 (2000V - 4000V) pin to pin Human Body Model
Type Package Pin Configuration Marking
BF2030
BF2030R
BF2030W
SOT143
SOT143R
SOT343
1= S
1= D
1= D
2=D
2=S
2=S
3=G2
3=G1
3=G1
4=G1
4=G2
4=G2
-
-
-
-
-
-
NDs
NDs
NDs
Maximum Ratings
Parameter
Symbol Value Unit
Drain-source voltage V
DS
8 V
Continuous drain current I
D
40 mA
Gate 1/ gate 2-source current ±I
G1/2SM
10
Gate 1 (external biasing) +V
G1SE
6 V
Total power dissipation
T
S
≤ 76 °C, BF2030, BF2030R
T
S
≤ 94 °C, BF2030W
P
tot
200
200
mW
Storage temperature T
stg
-55 ... 150
°C
Channel temperature T
ch
150
1
Pb-containing package may be available upon special request
2007-04-20
2
BF2030...
Thermal Resistance
Parameter
Symbol Value Unit
Channel - soldering point
1)
BF2030/ BF2030R
BF2030W
R
thchs
≤370
≤280
K/W
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
DC Characteristics
Drain-source breakdown voltage
I
D
= 20 µA, V
G1S
= 0 , V
G2S
= 0
V
(BR)DS
10 - - V
Gate1-source breakdown voltage
+I
G1S
= 10 mA, V
G2S
= 0 , V
DS
= 0
+V
(BR)G1SS
6 - 15
Gate2-source breakdown voltage
+I
G2S
= 10 mA, V
G1S
= 0 , V
DS
= 0
+V
(BR)G2SS
6 - 15
Gate1-source leakage current
V
G1S
= 5 V, V
G2S
= 0 , V
DS
= 0
+I
G1SS
- - 50 nA
Gate2-source leakage current
V
G2S
= 5 V, V
G1S
= 0 , V
DS
= 0
+I
G2SS
- - 50
Drain current
V
DS
= 5 V, V
G1S
= 0 , V
G2S
= 4 V
I
DSS
- - 50 µA
Drain-source current
V
DS
= 5 V, V
G2S
= 4 V, R
G1
= 100 kΩ
I
DSX
- 12 - mA
Gate1-source pinch-off voltage
V
DS
= 5 V, V
G2S
= 4 V, I
D
= 20 µA
V
G1S(p)
0.3 0.5 - V
Gate2-source pinch-off voltage
V
DS
= 5 V, I
D
= 20 µA
V
G2S(p)
0.3 0.6 -
1
For calculation of R
thJA
please refer to Application Note Thermal Resistance
2007-04-20
3
BF2030...
Electrical Characteristics at T
A
= 25°C, unless otherwise specified
Parameter
Symbol Values Unit
min. typ. max.
AC Characteristics (verified by random sampling)
Forward transconductance
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V
g
fs
27 31 -
mS
Gate1 input capacitance
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 10 MHz
C
g1ss
- 2.4 2.8 pF
Output capacitance
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 10 MHz
C
dss
- 1.3 -
Power gain
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 800 MHz
G
p
20 23 - dB
Noise figure
V
DS
= 5 V, I
D
= 10 mA, V
G2S
= 4 V,
f = 800 MHz
F
- 1.5 2.2 dB
Gain control range
V
DS
= 5 V, V
G2S
= 4...0 V, f = 800 MHz
∆G
p
40 50 -
P1-P3P4-P6P7-P9P10-P11

6-292250-7

Mfr. #:
Buy 6-292250-7
Manufacturer:
TE Connectivity
Description:
Headers & Wire Housings CT P/HDR BOX H ASSY 7P W/KINK
Lifecycle:
New from this manufacturer.
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