HN1D03F
2014-03-01
1
TOSHIBA Diode Silicon Epitaxial Planar Type
HN1D03F
Ultra High Speed Switching Application
z Built in anode common and cathode common.
Unit 1
z Low forward voltage Q1, Q2: V
F (3)
= 0.90V (typ.)
z Fast reverse recovery time Q1, Q2: t
rr
= 1.6ns (typ.)
z Small total capacitance Q1, Q2: C
T
= 0.9pF (typ.)
Unit 2
z Low forward voltage Q3, Q4: V
F (3)
= 0.92V (typ.)
z Fast reverse recovery time Q3, Q4: t
rr
= 1.6ns (typ.)
z Small total capacitance Q3, Q4: C
T
= 2.2pF (typ.)
Unit 1, Unit 2 Common Absolute Maximum Ratings
(Ta = 25
°
C)
Characteristic Symbol Rating Unit
Maximum (peak) reverse voltage V
RM
85 V
Reverse voltage V
R
80 V
Maximum (peak) forward current I
FM
300 (*) mA
Average forward current I
O
100 (*) mA
Surge current (10ms) I
FSM
2 (*) A
Power dissipation P 300 mW
Junction temperature T
j
125 °C
Storage temperature range T
stg
−55 to 125 °C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
(*) This is the Absolute Maximum Ratings of single diode (Q1 or Q2 or Q3 or Q4).
In the case of using Unit 1 and Unit 2 independently or simultaneously, the Absolute Maximum Ratings per diode
is 75% of the single diode one.
Marking Pin Assignment
(Top View)
JEDEC ―
JEITA SC-74
TOSHIBA
Weight: 15 mg (typ.)
Unit: mm
Start of commercial production
1992-05
