OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

STB30NF20

P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20
4/16
2 Electrical characteristics
(T
CASE
=25°C unless otherwise specified)
Table 5. On/off states
Symbol Parameter Test conditions Min. Typ. Max. Unit
V
(BR)DSS
Drain-source breakdown
voltage
I
D
= 1mA, V
GS
= 0
200 V
I
DSS
Zero gate voltage drain
current (V
GS
= 0)
V
DS
= Max rating,
V
DS
= Max rating,Tc=125°C
1
10
µA
µA
I
GSS
Gate body leakage current
(V
DS
= 0)
V
GS
= ±20V
±100 nA
V
GS(th)
Gate threshold voltage
V
DS
= V
GS
, I
D
= 250µA
234V
R
DS(on)
Static drain-source on
resistance
V
GS
= 10V, I
D
= 15A
0.065 0.075 Ω
Table 6. Dynamic
Symbol Parameter Test conditions Min. Typ. Max. Unit
g
fs
(1)
1. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward transconductance
V
DS
=15V, I
D
= 15A
20 S
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Reverse transfer
capacitance
V
DS
=25V, f=1 MHz, V
GS
=0
1597
320
43
pF
pF
pF
Q
g
Q
gs
Q
gd
Total gate charge
Gate-source charge
Gate-drain charge
V
DD
=160V, I
D
= 30A
V
GS
=10V
(see Figure 17)
38
8
18
nC
nC
nC
STP30NF20 - STW30NF20 - STB30NF20 Electrical characteristics
5/16
Table 7. Switching times
Symbol Parameter Test conditions Min. Typ. Max. Unit
t
d(on)
t
r
Turn-on delay time
Rise time
V
DD
=100V, I
D
=15A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
35
15.7
ns
ns
t
d(off)
t
f
Turn-off delay time
Fall time
V
DD
=100V, I
D
=15A,
R
G
=4.7Ω, V
GS
=10V
(see Figure 16)
38
8.8
ns
ns
Table 8. Source drain diode
Symbol Parameter Test conditions Min. Typ. Max. Unit
I
SD
I
SDM
(1)
1. Pulse width limited by safe operating area
Source-drain current
Source-drain current
(pulsed)
30
120
A
A
V
SD
(2)
2. Pulsed: pulse duration=300µs, duty cycle 1.5%
Forward on voltage
I
SD
=30A, V
GS
=0
1.5 V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=30A, di/dt = 100A/µs,
V
DD
=100 V, Tj=25°C
155
0.96
12.4
ns
µC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
=30A, di/dt = 100A/µs,
V
DD
=100 V, Tj=150°C
194
1.42
14.6
ns
µC
A
Electrical characteristics STP30NF20 - STW30NF20 - STB30NF20
6/16
2.1 Electrical characteristics (curves)
Figure 2. Safe operating area for TO-247 Figure 3. Thermal impedance for TO-247
Figure 4. Safe operating area for TO-220/
D²PAK
Figure 5. Thermal impedance for TO-220/
D²PAK
Figure 6. Output characteristics Figure 7. Transfer characteristics
P1-P3P4-P6P7-P9P10-P12P13-P15P16-P16

STB30NF20

Mfr. #:
Buy STB30NF20
Manufacturer:
STMicroelectronics
Description:
MOSFET N Ch 1500V 2.5A Pwr MOSFET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet