TSB772CK B0G

TSB772CK

Taiwan Semiconductor

1 Version: G1609

Low V

CESAT

PNP Transistor

FEATURES

● Low V

CE(SAT)

-0.3 @ I

C

=-2A, I

B

= -200mA (Typ.)

● Complementary part with TSD882

● Epitaxial Planar Type

● Compliant to RoHS Directive 2011/65/EU and in

accordance to WEEE 2002/96/EC.

● Halogen-free according to IEC 61249-2-21

APPLICATION

● Power Supply

● Low Speed Switching Applications

KEY PERFORMANCE PARAMETERS

P

ARAMETER

VALUE

UNIT

BV

CEO

-30 V

BV

CBO

-50 V

I

C

-3 A

V

CE(SAT)

I

C

= -2A, I

B

= -200mA

-0.5 V

TO

-

126

ABSOLUTE

M

AXIMUM RATINGS

(T

A

= 25°C unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Collector-Base Voltage

V

CBO

-50 V

Collector-Emitter Voltage

V

CEO

-30 V

Emitter-Base Voltage

V

EBO

-5 V

Collector Current

DC

I

C

-3

A

Pulse -7 (note)

Collector Power Dissipation

T

A

= 25

o

C

P

D

1

W

T

C

= 25

o

C 10

Operating Junction Temperature T

J

+150

o

C

Operating Junction and Storage Temperature Range T

STG

- 55 to +150

o

C

Note: Single pulse, Pw≤350µs, Duty≤2%

THERMAL PERFORMANCE

PARAMETER SYMBOL LIMIT UNIT

Junction to Case Thermal Resistance R

ӨJC

6.25

o

C/W

TSB772CK

Taiwan Semiconductor

2 Version: G1609

ELECTRICAL SPECIFICATIONS

(T

A

= 25°C unless otherwise noted)

PARAMETER CONDITIONS SYMBOL

MIN

TYP

MAX

UNIT

Collector-Base Breakdown Voltage I

C

= -50µA, I

E

= 0 BV

CBO

-50 -- --

V

Collector-Emitter Breakdown Voltage I

C

= -1mA, I

B

= 0 BV

CEO

-30 -- --

V

Emitter-Base Breakdown Voltage I

E

= -50µA, I

C

= 0 BV

EBO

-5 -- --

V

Collector Cutoff Current V

CB

= -30V, I

E

= 0 I

CBO

-- -- -1 µA

Emitter Cutoff Current V

EB

= -33V, I

C

= 0 I

EBO

-- -- -1 µA

Collector-Emitter Saturation Voltage I

C

= -2A, I

B

= -200mA *V

CE(SAT)

-- -0.3 -0.5 V

Base-Emitter Saturation Voltage I

C

= -2A, I

B

= -200mA *V

BE(SAT)

-- -1 -2 V

DC Current Transfer Ratio V

CE

= -2V, I

C

= -1A *h

FE

100 -- 500

Transition Frequency

V

CE

=-5V, I

C

=-100mA,

f=100MHz

f

T

-- 80 -- MHz

Output Capacitance V

CB

= -10V, f=1MHz Cob -- 55 -- pF

Collector Cutoff Current V

CB

= -30V, I

E

= 0 I

CBO

-- -- -1 µA

* Pulse Test: Pulse Width ≤380µS, Duty Cycle≤2%

ORDERING INFORMATION

PART NO.

PACKAGE

PACKING

TSB772CK B0G

TO-126 250pcs / Bulk Bag

TSB772CK C0G

TO-126 50pcs / Tube

TSB772CK

Taiwan Semiconductor

3 Version: G1609

ELECTRICAL CHARACTERICS CURVES (T

A

=25

o

C, unless otherwise noted)

Figure 1. DC Current Gain

Figure 2. V

CE(SAT)

vs. Collector Current

Figure 3. V

BE(SAT)

vs. Collector Current

Figure 4. Power Derating Curve

TSB772CK B0G

Mfr. #:

Buy TSB772CK B0G

Manufacturer:

Taiwan Semiconductor

Description:

Bipolar Transistors - BJT PNP Transistor

Lifecycle:

New from this manufacturer.

Delivery:

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Payment:

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