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DB2232000L
P1-P3
P4-P5
Product Standards
Schottky Barrier Diode
DB2232000L
Absolute Maximum Ratings Ta = 25
C
Note:
*1
50 Hz sine wave 1 cycle (Non-repetitive peak current)
Page
1.5
+125
-55
Tstg
Tj
30
to
Non-repetitive peak forward surge current
*1
IFSM
Storage temperature
Junction temperature
Repetitive peak reverse voltage
VRRM
30
Packaging
Embossed type (Thermo-compression sealing) :
3
000
pcs / reel (standard)
DB2232000L
Silicon epitaxial planar type
For rectification
Features
Low forward voltage VF
Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
Marking Symbol:
B5
4
1o
f
Small reverse leakage current
Code
1.
Cathode
SOD-123
Unit: mm
Symbol
Rating
Internal Connection
2.
Anode
Panasonic
Mini2-F4-B
JEITA
SC-109D
°C
V
A
A
125
°C
Unit
Parameter
V
Reverse voltage
VR
30
Peak forward current
IF(AV)
+85
°C
Operating ambient temperature
Topr
-40
to
1
2
3.5
1.6
0.8
2.6
0.55
0.13
1
2
Doc No.
T
T4-EA-12656
Revision.
3
Establish
ed
:
2010-07-22
Revise
d
:
2013-04-19
Product Standards
Schottky Barrier Diode
DB2232000L
Electrical Characteristics Ta = 25
C
3
C
Note
)
1.
Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7031 Measuring methods for Diodes.
2.
This product is sensitive to electric shock (static electricity, etc.). Due attention must be paid on
the charge of a human body and the leakage of current from the operating equipment.
3.
*1
trr test circuit
Page
Reverse recovery time
*1
trr
IF = IR = 100 mA
Irr = 0.1×IR, RL = 100
48
ns
16
V
V
VF3
IF = 1.5 A
0.46
V
Unit
Max
Min
Typ
Parameter
Symbol
Conditions
VR = 10 V, f = 1 MHz
Terminal capacitance
Ct
Reverse current
IR
of
Forward voltage
pF
100
μ
A
VR = 30 V
4
0.38
VF2
IF = 1.0 A
VF1
IF = 0.5 A
0.42
2
Bias Application Unit (N-50BU)
90%
Pulse Generator
(PG-10N)
R
s
= 50
Ω
W
ave Form Analyzer
(SAS-8130)
R
i
= 50
Ω
t
p
= 2
μ
s
t
r
= 0.35 ns
δ
= 0.05
I
F
= 100 mA
I
R
= 100 mA
R
L
= 100
Ω
10%
t
r
t
p
t
rr
V
R
I
F
t
t
A
Input Pulse
Output Pulse
I
rr
=
0.1
×
I
R
Doc No.
T
T4-EA-12656
Revision.
3
Establish
ed
:
2010-07-22
Revise
d
:
2013-04-19
Product Standards
Schottky Barrier Diode
DB2232000L
Technical Data ( reference )
Page
3
of
4
IF - VF
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
1.E+00
1.E+01
0.0
0.1
0.2
0.3
0.4
0.5
Forward voltage VF (V)
Forward current IF
(A)
Ta = 125 °C
-40 °C
25 °C
85 °C
IR - VR
1.E-08
1.E-07
1.E-06
1.E-05
1.E-04
1.E-03
1.E-02
1.E-01
01
0
2
0
3
0
Reverse voltage VR (V)
Reverse current
IR (A)
Ta = 125 °C
25 °C
-40 °C
85 °C
Ct - VR
0
50
100
150
200
250
300
350
0
5
10
15
20
25
30
Reverse voltage VR (V)
Terminal c
apacitanc
e Ct (pF)
Ta = 25 °C
f = 1 MHz
Rth
- t
1
10
100
1000
0.001
0.01
0.1
1
10
100
1000
Time t (s)
Thermal resistance Rth (°C/
W)
(1)
Rth(j-l) = 30 °C/W
(1) Non-heat sink
(2) Mounted on glass epoxy print board.
(3) Mounted on alumina print board.
Board size : 50 mm × 50 mm x 0.8 mm
Solder in : 2 mm x 2 mm
(2)
(3)
IF(AV) - Tl
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
0
25
50
75
100
125
150
175
Lead temperature Tl (°C)
Forward current (Average) IF(AV) (A
)
DC
1/4
tp/T
1/2
Sine Wave
VR = 15 V
Tj = 125 °C
tp
T
IF
PF(AV) - IF(AV)
0
0.2
0.4
0.6
0.8
1
0
0.5
1
1.5
2
Forward current (Average) IF(AV) (A)
Forward power dissipation (A
verage) PF(AV) (W)
DC
1/4
1/2
Sine Wave
tp
T
IF
Doc No.
T
T4-EA-12656
Revision.
3
Establish
ed
:
2010-07-22
Revise
d
:
2013-04-19
P1-P3
P4-P5
DB2232000L
Mfr. #:
Buy DB2232000L
Manufacturer:
Panasonic
Description:
Schottky Diodes & Rectifiers SCHOTTKY BARRIER FLT LD 1.6x3.5mm
Lifecycle:
New from this manufacturer.
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