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BUK7520-55A,127
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BUK7520-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2010. All rights rese
rved.
Product data sheet
Rev
. 02 — 15 June 2010
6 of 14
NXP Semiconductors
BUK7520-55A
N-channel T
renchMOS s
tand
ard level FET
6.
Characteristics
T
able 6.
Characteristics
Symbol
Parameter
Conditions
Mi
n
Ty
p
Max
Unit
St
atic characteris
tics
V
(BR)DSS
drain-source breakdown
voltage
I
D
=0
.
2
5m
A
;
V
GS
=0V
;
T
j
=
2
5
°
C
5
5
--V
I
D
=0
.
2
5m
A
;
V
GS
=0V
;
T
j
= -55 °C
50
-
-
V
V
GS(th)
gate-source threshold
voltage
I
D
=1m
A
;
V
DS
=V
GS
; T
j
= 175 °C;
see
Figure 1
1
1
--V
I
D
=1m
A
;
V
DS
=V
GS
; T
j
=2
5°
C
;
see
Figure 1
1
234V
I
D
=1m
A
;
V
DS
=V
GS
; T
j
=-
5
5°
C
;
see
Figure 1
1
--4
.
4
V
I
DSS
drain leakage current
V
DS
=5
5V
;
V
GS
=0V
;
T
j
= 175 °C
-
-
500
µA
V
DS
=5
5V
;
V
GS
=0V
;
T
j
= 25 °C
-
0.05
10
µA
I
GSS
gate leakage current
V
DS
=0V
;
V
GS
=2
0V
;
T
j
= 25 °C
-
2
100
nA
V
DS
=0V
;
V
GS
=-
2
0V
;
T
j
= 25 °C
-
2
100
nA
R
DSon
drain-source on-state
resistance
V
GS
=1
0V
;
I
D
=2
5A
;
T
j
= 175 °C;
see
Figure 12
; see
Figure 13
--4
0
m
Ω
V
GS
=1
0V
;
I
D
=2
5A
;
T
j
=2
5°
C
;
see
Figure 12
; see
Figure 13
-
1
72
0m
Ω
Dynamic ch
aracteri
stics
C
iss
input capacitance
V
GS
=0V
;
V
DS
=2
5V
;
f=1M
H
z
;
T
j
=2
5°
C
;
s
e
e
Fig
ure 14
-
1200
1592
pF
C
oss
output capacitance
-
290
356
pF
C
rss
reverse transfer
capacit
ance
-
179
240
pF
t
d(on)
turn-on delay time
V
DS
=3
0V
;
R
L
=1
.
2
Ω
; V
GS
=1
0V
;
R
G(ext)
=1
0
Ω
; T
j
=2
5°
C
-1
5
-n
s
t
r
rise time
-
74
-
ns
t
d(off
)
turn-o
ff delay time
-
70
-
ns
t
f
fall time
-
40
-
ns
L
D
internal drain in
ductance
from drain lead 6
mm from package to
centre of die ; T
j
=2
5°
C
-4
.
5
-n
H
from contact screw on mounting base to
centre of die ; T
j
=2
5°
C
-3
.
5
-n
H
L
S
internal source inductance
from source lead to source bond pad ;
T
j
=2
5°
C
-7
.
5
-n
H
Source-drain di
ode
V
SD
source-drain voltage
I
S
=2
0A
;
V
GS
=0V
;
T
j
=2
5°
C
;
see
Figure 15
-
0.85
1.2
V
t
rr
reverse recovery time
I
S
=2
0A
;
d
I
S
/dt = -100 A/µs;
V
GS
=-
1
0V
;
V
DS
=3
0V
;
T
j
=2
5°
C
-4
5
-n
s
Q
r
recovered charge
-
1
10
-
nC
BUK7520-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2010. All rights rese
rved.
Product data sheet
Rev
. 02 — 15 June 2010
7 of 14
NXP Semiconductors
BUK7520-55A
N-channel T
renchMOS s
tand
ard level FET
Fig 5.
Output charac
teristics: drain curren
t as a
function of drain-source volta
ge; typical values
Fig 6.
Drain-source on
-state resistance as a function
of drain current; typical values
Fig 7.
Sub-threshold d
rain current as a function of
gate-source voltage
Fig 8.
Forwar
d transconductanc
e as a function of
drain current; typi
cal values
0
20
40
60
80
100
120
140
160
180
200
0246
8
1
0
V
DS
(V)
I
D
20
14
12
11
10
9.0
8.5
8.0
7.5
7.0
6.0
6.5
5.5
5.0
4.5
(A)
03nc63
V
GS
(V) =
03nc62
10
15
20
25
30
5
1
01
52
02
5
V
GS
(V)
R
DSon
(m
Ω
)
03aa35
V
GS
(V)
06
4
2
10
−
4
10
−
5
10
−
2
10
−
3
10
−
1
I
D
(A)
10
−
6
min
typ
max
03nc60
0
5
10
15
20
25
02
0
4
0
6
0
8
0
I
D
(A)
g
fs
(S)
BUK7520-55A
All informatio
n provided in thi
s document is su
bject to legal
disclaimers.
© NXP B.V
. 2010. All rights rese
rved.
Product data sheet
Rev
. 02 — 15 June 2010
8 of 14
NXP Semiconductors
BUK7520-55A
N-channel T
renchMOS s
tand
ard level FET
Fig 9.
Transfer characteristics: d
rain current as a
function of gate-source voltag
e; typical values
Fig 10.
Gate-source voltage as a function of turn-on
gate charge; typical values
Fig 11.
Gate-source
threshold
voltage as a function
of
junction temperature
Fig 12.
Drain-source on-state resistanc
e as a function
of drain current; typical values
03nc61
0
20
40
60
80
100
120
0
2
46
8
1
0
V
GS
(V)
I
D
T
j
= 25
°
C
T
j
= 175
°
C
(A)
03nc59
0
2
4
6
8
10
01
0
2
0
3
0
4
0
Q
G
(nC)
V
GS
(V)
V
DD
= 44 V
V
DD
= 14 V
T
j
(
°
C)
−
60
180
120
06
0
03aa32
2
3
1
4
5
V
GS(th)
(V)
0
max
typ
min
03nc64
15
20
25
30
35
40
45
0
50
100
150
I
D
(A)
R
DSon
(m
Ω
)
10
7
5.5
6
V
GS
(V) =
8
6.5
P1-P3
P4-P6
P7-P9
P10-P12
P13-P15
BUK7520-55A,127
Mfr. #:
Buy BUK7520-55A,127
Manufacturer:
Nexperia
Description:
RF Bipolar Transistors MOSFET RAIL PWR-MOS
Lifecycle:
New from this manufacturer.
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BUK7520-55A,127