NPN SILICON PLANAR
MEDIUM POWER TRANSISTORS
ISSUE 2 MARCH 1994
FEATURES
* 140 Volt V
CEO
* 1 Amp continuous current
*P
tot
= 1 Watt
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL ZTX454 ZTX455 UNIT
Collector-Base Voltage V
CBO
140 160 V
Collector-Emitter Voltage V
CEO
120 140 V
Emitter-Base Voltage V
EBO
5V
Peak Pulse Current I
CM
2A
Continuous Collector Current I
C
1A
Power Dissipation at T
amb
=25°C P
tot
1W
Operating and Storage Temperature Range T
j
:T
stg
-55 to +200 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C).
PARAMETER SYMBOL ZTX454 ZTX455 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
140 160 V
I
C
=100µA
Collector-Emitter
Sustaining Voltage
V
CEO(sus)
120 140 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
55V
I
E
=100µA
Collector Cut-Off
Current
I
CBO
0.1
0.1
µA
µA
V
CB
=140V
V
CB
=120V
Emitter Cut-Off
Current
I
EBO
0.1 0.1
µA
V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
0.7
1.0
0.7 V I
C
=150mA, I
B
=15mA
I
C
=200mA, I
B
=20mA
Static Forward
Current Transfer
Ratio
h
FE
100
30
10
300 100
10
300 I
C
=150mA, V
CE
=10V*
I
C
=200mA, V
CE
=1V*
I
C
=1A, V
CE
=10V*
Transition
Frequency
f
T
100 100 MHz I
C
=50mA, V
CE
=10V
f=100MHz
Output Capacitance C
obo
15 15 pF V
CB
=10V, f=1MHz
* Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤ 2%
Typical
E-Line
TO92 Compatible
ZTX454
ZTX455
3-179
C
B
E
TYPICAL CHARACTERISTICS
V
CE(sat)
v I
C
IC - Collector Current (Amps)
V
C
E
(sat)
-
(
V
o
lts
)
IC - Collector Current (Amps) IC - Collector Current (Amps)
h
FE
v I
C
V
BE(sat)
v I
C
IC - Collector Current (Amps)
V
BE(on)
v I
C
h
FE
-
N
o
r
mal
i
se
d
Gain (%
)
V
BE
(sa
t
)
- (V
olts)
V
BE
-
(V
olts)
I
C
- Collector Current (Amps)
VCE - Collector Voltage (Volts)
Safe Operating Area
100110
0.001
0.01
0.1
1
Single Pulse Test at T
amb
=25°C
D.C.
1s
100ms
10ms
1.0ms
100µs
0.001
0.01
100.1 1
20
40
60
80
100
0.2
0.001
0.1
1
0.4
0.6
1.0
0
0.001
0.01
1
0.1
0.1
0.2
0.3
0.4
V
CE
=10V
I
C
/I
B
=10
I
C
/I
B
=10
Typical Switching Speeds
IC - Collector Current (Amps)
Switching tim
e
0.1
1
0.01
tf
100
0
td
nS
50
0.01
0.0001
0.001
1
0.01 0.1
0.6
0.8
1.0
1.2
V
CE
=10V
0.4
0.8
ZTX454
ZTX455
tf
ns
900
tr
ns
300
200
100
400
500
0
600
500
400
700
800
300
ts
µS
1000
ts
td
tr
0
3
2
1
6
5
4
7
I
B1
=I
B2
=I
C
/10
V
CE
=10V
ZTX454
ZTX455
3-180
