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NSVBAS21M3T5G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
March, 2014 − Rev. 1
Publication Order Number:
BAS21M3/D
1
BAS21M3T5G
High Voltage Switching
Diode
The BAS21M3T5G device is a spin−off of our popular SOT−23
three−leaded device. It is designed for high voltage switching
applications and is housed in the SOT−723 surface mount package.
This device is ideal for low−power surface mount applications where
board space is at a premium.
Features
• Reduces Board Space
• This is a Halide−Free Device
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These are Pb−Free Devices
MAXIMUM RATINGS (EACH DIODE)
Rating
Symbol Value Unit
Reverse Voltage V
R
250 Vdc
Forward Current I
F
200 mAdc
Peak Forward Surge Current I
FM(surge)
625 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
FR− 5 Board (Note 1)
T
A
= 25°C
Derate above 25°C
P
D
265
2.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
470 °C/W
Total Device Dissipation
Alumina Substrate, (Note 2) T
A
= 25°C
Derate above 25°C
P
D
640
5.1
mW
mW/°C
Thermal Resistance,
Junction−to−Ambient
R
JA
195 °C/W
Junction and Storage Temperature T
J
, T
stg
−55 to
+150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina.
250 V
HIGH VOLTAGE
SWITCHING DIODE
Device Package Shipping
†
ORDERING INFORMATION
BAS21M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
SOT−723
CASE 631AA
STYLE 2
MARKING
DIAGRAM
http://onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
AM = Specific Device Code
M = Date Code
AM M
1
3
2
1
3
CATHODE
1
ANODE
NSVBAS21M3T5G SOT−723
(Pb−Free)
8000 / Tape &
Reel
BAS21M3T5G
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
Reverse Voltage Leakage Current
(V
R
= 200 Vdc)
(V
R
= 200 Vdc, T
J
= 150°C)
I
R
−
−
0.1
100
Adc
Reverse Breakdown Voltage (I
BR
= 100 Adc)
V
(BR)
250 − Vdc
Forward Voltage
(I
F
= 100 mAdc)
(I
F
= 200 mAdc)
V
F
−
−
1.0
1.25
Vdc
Diode Capacitance (V
R
= 0, f = 1.0 MHz) C
D
− 5.0 pF
Reverse Recovery Time (I
F
= I
R
= 30 mAdc, I
R(REC)
= 3.0 mAdc, R
L
= 100) t
rr
− 50 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
Notes: 1. A 2.0 k variable resistor adjusted for a Forward Current (I
F
) of 30 mA.
Notes: 2. Input pulse is adjusted so I
R(peak)
is equal to 30 mA.
Notes: 3. t
p
» t
rr
+10 V
2.0 k
820
0.1 F
D.U.T.
V
R
100 H
0.1 F
50 OUTPUT
PULSE
GENERATOR
50 INPUT
SAMPLING
OSCILLOSCOPE
t
r
t
p
t
10%
90%
I
F
I
R
t
rr
t
I
R(REC)
= 3.0 mA
OUTPUT PULSE
(I
F
= I
R
= 30 mA; MEASURED
at I
R(REC)
= 3.0 mA)
I
F
INPUT SIGNAL
Figure 1. Recovery Time Equivalent Test Circuit
BAS21M3T5G
http://onsemi.com
3
TYPICAL CHARACTERISTICS
V
F
, FORWARD VOLTAGE (V)
0.1
10
20
V
R
, REVERSE VOLTAGE (V)
1.0
0.1
0.01
0.001
50 80 110 140
170
1.6
0
V
R
, REVERSE VOLTAGE (V)
1.4
1.0
0.6
0.4
C
D
, DIODE CAPACITANCE (pF)
246 8
I
F
, FORWARD CURRENT (mA)
Figure 2. V
F
vs. I
F
Figure 3. I
R
vs. V
R
Figure 4. Capacitance
I
R
, REVERSE CURRENT (μA)
1.0
10
100
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0
85°C
55°C
150°C
125°C
25°C
-55°C
200 230
0.8
1.2
1357
Cap
-40°C
260
150°C
125°C
85°C
55°C
25°C
P1-P3P4-P4

NSVBAS21M3T5G

Mfr. #:
Buy NSVBAS21M3T5G
Manufacturer:
ON Semiconductor
Description:
Diodes - General Purpose, Power, Switching SS SWITCHING DIODE
Lifecycle:
New from this manufacturer.
Delivery:
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