OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

TPC8223-H,LQ(S

P1-P3P4-P6P7-P9
TPC8223-H
1
MOSFETs Silicon N-Channel MOS (U-MOS-H)
TPC8223-H
TPC8223-H
TPC8223-H
TPC8223-H
Start of commercial production
2010-10
1.
1.
1.
1. Applications
Applications
Applications
Applications
• High-Efficiency DC-DC Converters
• Notebook PCs
• Mobile Handsets
2.
2.
2.
2. Features
Features
Features
Features
(1) Small, thin package
(2) High-speed switching
(3) Small gate charge: Q
SW
= 3.6 nC (typ.)
(4) Low drain-source on-resistance: R
DS(ON)
= 17 mΩ (typ.) (V
GS
= 4.5 V)
(5) Low leakage current: I
DSS
= 10 µA (max) (V
DS
= 30 V)
(6) Enhancement mode: V
th
= 1.3 to 2.3 V (V
DS
= 10 V, I
D
= 0.1 mA)
3.
3.
3.
3. Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
Packaging and Internal Circuit
SOP-8
1, 3: Source
2, 4: Gate
5, 6, 7, 8: Drain
2014-02-27
Rev.4.0
TPC8223-H
2
4.
4.
4.
4. Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
Absolute Maximum Ratings (Note) (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Drain-source voltage
Gate-source voltage
Drain current (DC)
Drain current (pulsed)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Power dissipation (single operation)
Power dissipation (per device for dual
operation)
Single-pulse avalanche energy
Avalanche current
Channel temperature
Storage temperature
(t = 10 s)
(t = 10 s)
(t = 10 s)
(t = 10 s)
(Note 1)
(Note 1)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
(Note 6)
Symbol
V
DSS
V
GSS
I
D
I
DP
P
D(1)
P
D(2)
P
D(1)
P
D(2)
E
AS
I
AR
T
ch
T
stg
Rating
30
±20
9
36
1.5
1.1
0.75
0.45
52
9
150
-55 to 150
Unit
V
A
W
mJ
A
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
5.
5.
5.
5. Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Thermal Characteristics
Characteristics
Channel-to-ambient thermal resistance (single
operation)
Channel-to-ambient thermal resistance (per device for
dual operation)
Channel-to-ambient thermal resistance (single
operation)
Channel-to-ambient thermal resistance (per device for
dual operation)
(t = 10 s)
(t = 10 s)
(t = 10 s)
(t = 10 s)
(Note 2), (Note 4)
(Note 2), (Note 5)
(Note 3), (Note 4)
(Note 3), (Note 5)
Symbol
R
th(ch-a)(1)
R
th(ch-a)(2)
R
th(ch-a)(1)
R
th(ch-a)(2)
Max
83.3
113
166
277
Unit
/W
Note 1: Ensure that the channel temperature does not exceed 150.
Note 2: Device mounted on a glass-epoxy board (a), Figure 5.1
Note 3: Device mounted on a glass-epoxy board (b), Figure 5.2
Note 4: Power dissipation and thermal resistance values per device with the other device being off (During single
operation, power is supplied to only one of the two devices.)
Note 5: Power dissipation and thermal resistance values per device for dual operation (During dual operation, power
is evenly supplied to both devices.)
Note 6: V
DD
= 24 V, T
ch
= 25 (initial), L = 0.5 mH, R
G
= 1.2 Ω, I
AR
= 9 A
Fig.
Fig.
Fig.
Fig. 5.1
5.1
5.1
5.1 Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (a)
Board (a)
Board (a)
Board (a)
Fig.
Fig.
Fig.
Fig. 5.2
5.2
5.2
5.2 Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Device Mounted on a Glass-Epoxy
Board (b)
Board (b)
Board (b)
Board (b)
Note: This transistor is sensitive to electrostatic discharge and should be handled with care.
2014-02-27
Rev.4.0
TPC8223-H
3
6.
6.
6.
6. Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
Electrical Characteristics
6.1.
6.1.
6.1.
6.1. Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
Static Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source on-resistance
Symbol
I
GSS
I
DSS
V
(BR)DSS
V
(BR)DSX
V
th
R
DS(ON)
Test Condition
V
GS
= ±20 V, V
DS
= 0 V
V
DS
= 30 V, V
GS
= 0 V
I
D
= 10 mA, V
GS
= 0 V
I
D
= 10 mA, V
GS
= -20 V
V
DS
= 10 V, I
D
= 0.1 mA
V
GS
= 4.5 V, I
D
= 4.5 A
V
GS
= 10 V, I
D
= 4.5 A
Min
30
15
1.3
Typ.
17
14
Max
±0.1
10
2.3
21
17
Unit
µA
V
mΩ
6.2.
6.2.
6.2.
6.2. Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
Dynamic Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Input capacitance
Reverse transfer capacitance
Output capacitance
Gate resistance
Switching time (rise time)
Switching time (turn-on time)
Switching time (fall time)
Switching time (turn-off time)
Symbol
C
iss
C
rss
C
oss
r
g
t
r
t
on
t
f
t
off
Test Condition
V
DS
= 10 V, V
GS
= 0 V, f = 1 MHz
V
DS
= 10 V, V
GS
= 0 V, f = 5 MHz
See Figure 6.2.1.
Min
Typ.
1190
55
210
3.8
2.1
7.9
2.5
20
Max
5.7
Unit
pF
Ω
ns
Fig.
Fig.
Fig.
Fig. 6.2.1
6.2.1
6.2.1
6.2.1 Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
Switching Time Test Circuit
6.3.
6.3.
6.3.
6.3. Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
Gate Charge Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Total gate charge (gate-source plus
gate-drain)
Gate-source charge 1
Gate-drain charge
Gate switch charge
Symbol
Q
g
Q
gs1
Q
gd
Q
SW
Test Condition
V
DD
≈ 24 V, V
GS
= 10 V, I
D
= 9 A
V
DD
≈ 24 V, V
GS
= 5 V, I
D
= 9 A
V
DD
≈ 24 V, V
GS
= 10 V, I
D
= 9 A
Min
Typ.
17
8.3
3.7
1.8
3.6
Max
Unit
nC
6.4.
6.4.
6.4.
6.4. Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
Source-Drain Characteristics (T
a
a
a
a
= 25
= 25
= 25
= 25
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
unless otherwise specified)
Characteristics
Reverse drain current (pulsed)
Diode forward voltage
(Note 7)
Symbol
I
DRP
V
DSF
Test Condition
I
DR
= 9 A, V
GS
= 0 V
Min
Typ.
Max
36
-1.2
Unit
A
V
Note 7: Ensure that the channel temperature does not exceed 150.
2014-02-27
Rev.4.0
P1-P3P4-P6P7-P9

TPC8223-H,LQ(S

Mfr. #:
Buy TPC8223-H,LQ(S
Manufacturer:
Toshiba
Description:
MOSFET N-Ch Dual 30V 9A 1.5W 1190pF
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet