IAM-92516-BLK

IAM-92516
High Linearity GaAs FET Mixer
Data Sheet
Notes:
Package marking provides orientation andidenti cation
“M3” = Device Code
“X” = Month code indicates the month of manufacture
Notes:
1. Refer to reliability datasheet for detailed MTTF data.
2. Conform to JEDEC reference outline MO229 for DRP-N
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Model (Class 1A)
Refer to Avago Application Note A004R:
Electrostatic Discharge Damage and Control.
Description
Avago Technologies’s IAM-92516 is a high linearity GaAs
FET Mixer using 0.5 μm enhancement mode pHEMT
technology. This device houses in Pb-free and Halogen
free 16 pins LPCC 3x3
[2]
plastic package. The IAM-92516
has built-in LO bu er ampli er which requires -3 dBm LO
power to deliver an input third order intercept point of
27 dBm. LO port is 50 ohm matched and can be driven
di erential or single ended while IF port is 200 ohm
matched and fully di erential. RF port requires external
matching network for optimum input return loss and
IIP3 performance.
RF and LO frequency range coverage from 400 to
3500 MHz and IF coverage is from DC to 300 MHz.
This mixer consumes 26 mA of current from a single
5V supply. Conversion loss is typically 6 dB and noise
gure is typically 12.5 dB. Excellent output power at 1 dB
compression of 9 dBm. LO to IF, LO to RF and RF to IF
isolation are greater than 30 dB.
The IAM-92516 is ideally suited for frequency up/
down conversion for base station radio card receiver
and transmitter, microwave link transceiver, MMDS,
modulation and demodulation for receiver and
transmitter and general purpose resistive FET mixer,
which require high linearity. All devices are 100% RF and
DC tested.
Pin Connections and Package Marking
Features
DC = 5V @ 26 mA (Typ.)
RF = 1.91 GHz, Pin
RF
= -10 dBm;
LO = 1.7 GHz, Pin
LO
= -3 dBm;
IF = 210 MHz unlesss otherwise speci ed
Lead-free Option Available
High Linearity: 27 dBm IIP3
Conversion Loss: 6 dB typical
Wide band operation: 400-3500 MHz RF & LO input
DC – 300 MHz IF output
Fully di erential or single ended operation
High P1dB: 9 dBm typical
Low current consumption: 5V@ 26 mA typical
Excellent uniformity in product speci cations
Small LPCC 3.0 x 3.0 x 0.75 mm package
MTTF > 300 years
[1]
MSL-1 and lead-free
Tape-and-Reel packaging option available
Applications
Frequency up/down converter for base station radio
card, microwave link transceiver, and MMDS
Modulation and demodulation for receiver and
transmitter
General purpose resistive FET mixer for other high
linearity applications
2
IAM-92516 Absolute Maximum Ratings
[1]
Parameter Units Absolute Max.
Device Voltage V 10
CW RF Input Power
[2]
dBm +30
CW LO Input Power
[2]
dBm 20
Channel Temperature °C 150
Storage Temperature °C -65 to 150
Notes:
1.
Operation of this device above any one of
these parameters may cause permanent
damage.
2. Assuming DC quiescent conditions and
T
A
= 25°C.
3. Board (package belly) temperature T
B
is
25°C. Derate 21 mW/°C for T
B
> 85°C.
4. Channel-to-board thermal resistance
measured using 150°C Liquid Crystal
Measurement method.
Electrical Speci cations
T
A
= 25°C, DC =5V @ 26 mA, RF =1.91 GHz, Pin
RF
= -10 dBm; LO =1.7 GHz, Pin
LO
= -3 dBm, IF = 210 MHz unless otherwise speci ed.
Symbol Parameter and Test Condition Units Min. Typ. Max. Std Dev.
[1]
F
RF
Frequency Range, RF MHz 400 3500
F
LO
Frequency Range, LO MHz 400 3500
F
IF
Frequency Range, IF MHz DC 300
Id Device Current mA 22 26 30 0.89
G
c
[3]
Conversion Loss dB 6 6.9 0.08
IIP3
[2]
Input Third Order Intercept Point dBm 22 27 0.43
NF
[3]
SSB Noise Figure dB 12.5
P1dB
[3]
Output Power at 1 dB Compression dBm 9
RL
RF
RF Port Return Loss
dB 19
RL
LO
LO Port Return Loss
dB 24
RL
IF
IF Port Return Loss
dB
21
ISOL
L-R
LO-RF Isolation
dB
34
ISOL
L-I
LO-IF Isolation
dB 56
ISOL
R-L
RF-IF Isolation
dB 33
Notes:
1. Standard deviation number is based on measurement of at least 500 parts from three non-consecutive wafer lots during the initial
characterization of
this product and is intended to be used as an estimate for distribution of the typical speci cation.
2. IIP3 test condition: F
RF1
= 1.91 GHz, F
RF2
= 1.89 GHz with input power of -10 dBm per tone and LO power = -3 dBm at LO frequency F
LO
= 1.7 GHz.
3. Conversion loss, P1dB and NF data have de-embedded balun loss = 0.8 dB @ 210 MHz.
Figure 1. IAM-92516 Test Board.
Thermal Resistance
[2,4]
ch-c
= 47.6°C/W
Simpli ed Schematic
3
IIP3
25 2926
27 28
240
200
160
120
80
40
0
Cpk=3.7
Stdev=0.43
+3 Std–3 Std
FREQUENCY
LSL=22.0, Nominal=26.8
ID
22 3024
26 28
200
160
120
80
60
40
0
Cpk=1.5
Stdev=0.89
+3 Std–3 Std
FREQUENCY
LSL=22.0, Nominal=26.0, USL=30.0
CONVERSION LOSS
-6.4 -5.4-6.2
-6 -5.8 -5.6
150
120
90
60
30
0
Cpk=3.67
Stdev=0.079
+3 Std
–3 Std
FREQUENCY
LSL=-6.9, Nominal=-6.0
Figure 3. Normal Distribution of IIP3, ID, and Conversion Loss.
Notes:
5. Distribution data sample size is 500 samples taken from 5 di erent
wafers. Future wafers allocated to this product may have nominal
values anywhere between the upper and lower limits.
6. Conversion Loss data has de-embed balun loss 0.8 dB @ 210 MHz.
Figure 2. Schematic Diagram of IAM-92516 Test Circuit.

IAM-92516-BLK

Mfr. #:
Manufacturer:
Broadcom / Avago
Description:
IC MIXER RF GAAS FET 16LPCC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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