BYV27-150-TAP

BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
1
Document Number: 86042
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Ultra-Fast Avalanche Sinterglass Diode
MECHANICAL DATA
Case: SOD-57
Terminals: plated axial leads, solderable per MIL-STD-750,
method 2026
Polarity: color band denotes cathode end
Mounting position: any
Weight: approx. 369 mg
FEATURES
Controlled avalanche characteristic
Low forward voltage
Ultra fast recovery time
Glass passivated junction
Hermetically sealed package
Material categorization:
For definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
• Very fast rectification diode e.g. for switch mode power
supply
949539
ORDERING INFORMATION (Example)
DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY
BYV27-200 BYV27-200-TR 5000 per 10" tape and reel 25 000
BYV27-200 BYV27-200-TAP 5000 per ammopack 25 000
PARTS TABLE
PART TYPE DIFFERENTIATION PACKAGE
BYV27-50 V
R
= 50 V; I
F(AV)
= 2 A SOD-57
BYV27-100 V
R
= 100 V; I
F(AV)
= 2 A SOD-57
BYV27-150 V
R
= 150 V; I
F(AV)
= 2 A SOD-57
BYV27-200 V
R
= 200 V; I
F(AV)
= 2 A SOD-57
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Peak reverse voltage, non repetitive See electrical characteristics
BYV27-50 V
RSM
55 V
BYV27-100 V
RSM
110 V
BYV27-150 V
RSM
165 V
BYV27-200 V
RSM
220 V
Reverse voltage = repetitive peak reverse
voltage
See electrical characteristics
BYV27-50 V
R
= V
RRM
50 V
BYV27-100 V
R
= V
RRM
100 V
BYV27-150 V
R
= V
RRM
150 V
BYV27-200 V
R
= V
RRM
200 V
Peak forward surge current t
p
= 10 ms, half sine wave I
FSM
50 A
Repetitive peak forward current I
FRM
15 A
Average forward current I
F(AV)
2A
Pulse energy in avalanche
mode, non repetitive (inductive
load switch off)
I
(BR)R
= 1 A, T
j
= 175 °C E
R
20 mJ
Junction and storage temperature range T
j
= T
stg
- 55 to + 175 °C
MAXIMUM THERMAL RESISTANCE (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Junction ambient
l = 10 mm, T
L
= constant R
thJA
45 K/W
On PC board with spacing 25 mm R
thJA
100 K/W
BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
2
Document Number: 86042
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 C, unless otherwise specified)
Fig. 1 - Typ. Thermal Resistance vs. Lead Length
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Max. Average Forward Current vs. Ambient Temperature
Fig. 4 - Reverse Current vs. Junction Temperature
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 3 A V
F
- - 1.07 V
I
F
= 3 A, T
j
= 175 °C V
F
- - 0.88 V
Reverse current
V
R
= V
RRM
I
R
--1μA
V
RSM
I
R
- - 100 μA
V
R
= V
RRM
, T
j
= 165 °C I
R
- - 150 μA
Reverse recovery time I
F
= 0.5 A, I
R
= 1 A, i
R
= 0.25 A t
rr
- - 25 ns
0 5 10 15 20 25 30
0
20
40
60
80
120
R
thJA
- Therm.Resist.Junction/Ambient (K/W)
l - Lead Length (mm)
949526
100
ll
T
L
= constant
I
F
- Forward Current (A)
0.001
0.01
0.1
1
10
100
0.0 0.5 1.0 1.5 2.0 2.5
V
F
- Forward Voltage (V)
16382
T
j
= 175 °C
T
j
= 25 °C
0.0
0.5
1.0
1.5
2.0
2.5
0 20 40 60 80 100 120 140 160 180
T
amb
- Ambient Temperature (°C)
16383
I
FAV
- Average Forward Current (A)
V
R
= V
RRM
half sine wave
R
thJA
= 45 K/W
l = 10 mm
R
thJA
= 100 K/W
PCB: d = 25 mm
1
10
100
1000
25 50 75 100 125 150 175
T
j
- Junction Temperature (°C)
16384
V
R
= V
RRM
I
R
- Reverse Current (A)
BYV27-50, BYV27-100, BYV27-150, BYV27-200
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 04-Sep-12
3
Document Number: 86042
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage
PACKAGE DIMENSIONS in millimeters (inches): SOD-57
0
10
20
30
40
50
60
70
25 50 75 100 125 150 175
16385
P
R
- Reverse Power Dissipation (mW)
T
j
- Junction Temperature (°C)
V
R
= V
RRM
P
R
- Limit
at 100 % V
R
P
R
- Limit
at 80 % V
R
0
20
40
60
80
100
0.1 1 10 100
V
R
- Reverse Voltage (V)
16386
C
D
- Diode Capacitance (pF)
f = 1 MHz
20543
3.6 (0.142) max.
26 (1.024) min.
4 (0.157) max.
26 (1.024) min.
0.82 (0.032) max.

BYV27-150-TAP

Mfr. #:
Manufacturer:
Vishay Semiconductors
Description:
Rectifiers 2.0 Amp 150 Volt 50 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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