IRFZ48Z/S/LPbF
2 www.irf.com
Notes:
Repetitive rating; pulse width limited by
max. junction temperature. (See fig. 11).
Limited by T
Jmax
, starting T
J
= 25°C, L =0.11mH,
R
G
= 25Ω, I
AS
= 37A, V
GS
=10V. Part not
recommended for use above this value.
I
SD
≤ 37A, di/dt ≤ 920A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C.
Pulse width ≤ 1.0ms; duty cycle ≤ 2%.
C
oss
eff. is a fixed capacitance that gives the same charging time
as C
oss
while V
DS
is rising from 0 to 80% V
DSS
.
Limited by T
Jmax
, see Fig.12a, 12b, 15, 16 for typical repetitive
avalanche performance.
This value determined from sample failure population. 100%
tested to this value in production.
This is applied to D
2
Pak, when mounted on 1" square PCB
( FR-4 or G-10 Material ). For recommended footprint and
soldering techniques refer to application note #AN-994.
S
D
G
S
D
G
Static @ T
J
= 25°C (unless otherwise specified)
Parameter Min. T
p. Max. Units
V
(BR)DSS
Drain-to-Source Breakdown Volta
e55–––––– V
∆ΒV
DSS
∆T
J
Breakdown Volta
e Temp. Coefficien
––– 0.054 ––– V/°C
R
DS(on)
Static Drain-to-Source On-Resistanc
––– 8.6 11
m
Ω
V
GS(th)
Gate Threshold Volta
e 2.0 ––– 4.0 V
fs Forward Transconductance 24 ––– ––– S
I
DSS
Drain-to-Source Leaka
e Current ––– ––– 20 µA
––– ––– 250
I
GSS
Gate-to-Source Forward Leaka
e ––– ––– 200 nA
Gate-to-Source Reverse Leaka
e ––– ––– -200
Q
g
Total Gate Char
e ––– 43 64 nC
Q
gs
Gate-to-Source Char
e ––– 11 16
Q
gd
Gate-to-Drain ("Miller") Char
e ––– 16 24
t
d(on)
Turn-On Dela
Time ––– 15 ––– ns
t
r
Rise Time ––– 69 –––
t
d(off)
Turn-Off Dela
Time ––– 35 –––
t
f
Fall Time ––– 39 –––
L
D
Internal Drain Inductance ––– 4.5 ––– nH Between lead,
6mm (0.25in.)
L
S
Internal Source Inductance ––– 7.5 ––– from packa
e
and center of die contact
C
iss
Input Capacitance ––– 1720 ––– pF
C
oss
Output Capacitance ––– 300 –––
C
rss
Reverse Transfer Capacitance ––– 160 –––
C
oss
Output Capacitance ––– 1020 –––
C
oss
Output Capacitance ––– 230 –––
C
oss
eff.
Effective Output Capacitance ––– 380 –––
Diode Characteristics
Parameter Min. T
p. Max. Units
I
S
Continuous Source Current ––– ––– 61
(Body Diode) A
I
SM
Pulsed Source Current ––– ––– 240
(Body Diode)
V
SD
Diode Forward Voltage
––– ––– 1.3 V
t
rr
Reverse Recovery Time
––– 20 31 ns
Q
rr
Reverse Recover
Char
e ––– 13 20 nC
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
V
DS
= 44V
V
GS
= 10V
ƒ = 1.0MHz, See Fig. 5
V
GS
= 0V, V
DS
= 1.0V, ƒ = 1.0MHz
V
GS
= 10V
MOSFET symbol
V
GS
= 0V
V
DS
= 25V
V
GS
= 0V, V
DS
= 44V, ƒ = 1.0MHz
Conditions
V
GS
= 0V, V
DS
= 0V to 44V
T
J
= 25°C, I
F
= 37A, V
DD
= 30V
di/dt = 100A/µs
T
J
= 25°C, I
S
= 37A, V
GS
= 0V
showing the
integral reverse
p-n junction diode.
V
DS
= V
GS
, I
D
= 250µA
V
DS
= 55V, V
GS
= 0V
V
DS
= 55V, V
GS
= 0V, T
J
= 125°C
R
G
= 12Ω
I
D
= 37A
V
DS
= 25V, I
D
= 37A
V
DD
= 28V
I
D
= 37A
V
GS
= 20V
V
GS
= -20V
Conditions
V
GS
= 0V, I
D
= 250µA
Reference to 25°C, I
D
= 1mA
V
GS
= 10V, I
D
= 37A