Expand menu
Hello, Sign in
My Account
0
Cart
Home
Products
Sensors
Semiconductors
Passive Components
Connectors
Power
Electromechanical
Optoelectronics
Circuit Protection
Integrated Circuits - ICs
Main Products
Manufacturers
Blog
Services
About OMO
About Us
Contact Us
Check Stock
IRFZ48ZLPBF
P1-P3
P4-P6
P7-P9
P10-P12
IRFZ48Z/S/LPbF
4
www.irf.com
Fig 8.
Maximum Safe Operating Area
Fig 6.
Typical Gate Charge vs.
Gate-to-Source Voltage
Fig 5.
Typical Capacitance vs.
Drain-to-Source Voltage
Fig 7.
Typical Source-Drain Diode
Forward Voltage
1
10
100
V
DS
, D
rain-t
o-Sour
ce Volt
age (V)
100
1000
10000
C
,
C
a
p
a
c
i
t
a
n
c
e
(
p
F
)
V
GS
= 0V, f = 1 MHZ
C
iss
= C
gs
+ C
gd
, C
ds
SHO
RTED
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
C
oss
C
rss
C
iss
0
1
02
03
04
05
0
Q
G
Tot
al Gat
e Charge (nC
)
0.0
2.0
4.0
6.0
8.0
10.0
12.0
V
G
S
,
G
a
t
e
-
t
o
-
S
o
u
r
c
e
V
o
l
t
a
g
e
(
V
)
V
DS
= 44V
V
DS
= 28V
V
DS
= 11V
I
D
= 37A
0.2
0.4
0.6
0.
8
1.0
1.2
1.4
1.6
1.8
2.0
V
SD
, S
ource-t
o-Dr
ain Vol
tage (V
)
1
10
100
1000
I
S
D
,
R
e
v
e
r
s
e
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
T
J
= 25°
C
T
J
= 175°
C
V
GS
= 0V
1
10
100
V
DS
, D
rain-
to-
Source Vol
tage (V
)
1
10
100
1000
I
D
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
C
u
r
r
e
n
t
(
A
)
1msec
10msec
OPERATION IN THIS AREA
LIM
ITED BY R
DS
(on)
100µsec
Tc =
25°C
Tj
= 175°
C
Si
ngle Pul
se
IRFZ48Z/S/LPbF
www.irf.com
5
Fig 11.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Fig 9.
Maximum Drain Current vs.
Case Temperature
Fig 10.
Normalized On-Resistance
vs. Temperature
25
50
75
100
125
150
175
T
C
, C
ase Temperat
ure (°
C)
0
10
20
30
40
50
60
70
I
D
,
D
r
a
i
n
C
u
r
r
e
n
t
(
A
)
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
T
J
, Junct
ion Tem
perat
ure (°C
)
0.5
1.0
1.5
2.0
2.5
R
D
S
(
o
n
)
,
D
r
a
i
n
-
t
o
-
S
o
u
r
c
e
O
n
R
e
s
i
s
t
a
n
c
e
(
N
o
r
m
a
l
i
z
e
d
)
I
D
= 37A
V
GS
= 10V
1E-006
1E-005
0.0001
0.001
0.01
0.1
t
1
, R
ectangular
Pul
se Durat
ion (sec)
0.001
0.01
0.1
1
10
T
h
e
r
m
a
l
R
e
s
p
o
n
s
e
(
Z
t
h
J
C
)
0.20
0.10
D =
0.50
0.02
0.01
0.05
SINGLE PUL
SE
( THERMAL RESPO
NSE )
Notes
:
1. Du
ty Fa
cto
r D = t1
/t2
2. P
eak Tj =
P dm x Z
thj
c + Tc
Ri (°C/W)
τ
i (sec)
0.9848 0.000451
0.6546 0.002487
τ
J
τ
J
τ
1
τ
1
τ
2
τ
2
R
1
R
1
R
2
R
2
τ
τ
C
Ci
i
/
Ri
Ci=
τ
i
/
Ri
IRFZ48Z/S/LPbF
6
www.irf.com
Q
G
Q
GS
Q
GD
V
G
Charge
10 V
Fig 13b.
Gate Charge Test Circuit
Fig 13a.
Basic Gate Charge Waveform
Fig 12c.
Maximum Avalanche Energy
vs. Drain Current
Fig 12b.
Unclamped Inductive Waveforms
Fig 12a.
Unclamped Inductive Test Circuit
t
p
V
(BR)DSS
I
AS
Fig 14.
Threshold Voltage vs. Temperature
R
G
I
AS
0.01
Ω
t
p
D.
U.T
L
V
DS
+
-
V
DD
DRI
V
ER
A
15V
20V
V
GS
1K
VC
C
DUT
0
L
25
50
75
100
125
150
175
St
arti
ng T
J
, Junct
ion Tem
perat
ure (°C
)
0
50
100
150
200
250
300
E
A
S
,
S
i
n
g
l
e
P
u
l
s
e
A
v
a
l
a
n
c
h
e
E
n
e
r
g
y
(
m
J
)
I
D
TO
P 3.5A
4.9A
BO
TTOM
3
7A
-75
-50
-25
0
25
50
75
100
125
150
175
200
T
J
, T
emperatur
e ( °C
)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
G
S
(
t
h
)
G
a
t
e
t
h
r
e
s
h
o
l
d
V
o
l
t
a
g
e
(
V
)
I
D
= 250µA
P1-P3
P4-P6
P7-P9
P10-P12
IRFZ48ZLPBF
Mfr. #:
Buy IRFZ48ZLPBF
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CH 55V 61A TO-262
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
Products related to this Datasheet
IRFZ48ZPBF
IRFZ48ZLPBF
IRFZ48ZSPBF