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Caution: Observe precautions when handling because these devices are sensitive to electrostatic discharge
L-BAND 4 W HIGH POWER SPDT SWITCH
GaAs INTEGRATED CIRCUIT
PG2155TB
Document No. PG10583EJ02V0DS (2nd edition)
Date Published January 2008 NS
DESCRIPTION
The
PG2155TB is an L-band SPDT GaAs FET switch which was developed for digital cellular or cordless
telephone application. The device can operate from 500 MHz to 2.5 GHz, having the low insertion loss and high
linearity.
FEATURES
• Low insertion loss : LINS = 0.35 dB TYP. @ Vcont = +2.6 V/0 V, f = 1.0 GHz
: LINS = 0.40 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.0 GHz
: LINS = 0.45 dB TYP. @ Vcont = +2.6 V/0 V, f = 2.5 GHz
• High linearity : 2f0 = 70 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm
: 3f0 = 75 dBc TYP. @ Vcont = +2.6 V/0 V, f = 0.9 GHz, Pin = +34.5 dBm
• 6-pin super minimold package (2.1 2.0 0.9 mm)
APPLICATION
• GSM Triple/Quad band digital cellular
ORDERING INFORMATION
6-pin super minimold
(Pb-Free)
Embossed tape 8 mm wide
Pin 4, 5, 6 face the perforation side of the tape
Qty 3 kpcs/reel
Remark To order evaluation samples, contact your nearby sales office.
Part number for sample order:
PG2155TB-A
